Overview
The BDX53B is a high-performance NPN Darlington transistor manufactured by STMicroelectronics. It is part of the BDX53B - BDX54C series, which includes complementary power Darlington transistors. The device is designed for general-purpose amplifier and low-speed switching applications, leveraging its monolithic Darlington configuration and integrated antiparallel collector-emitter diode.
Key Specifications
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VCBO | Collector-base voltage (IE = 0) | 80 | V |
| VCEO | Collector-emitter voltage (IB = 0) | 80 | V |
| VEBO | Emitter-base voltage (IC = 0) | 5 | V |
| IC | Collector current - Continuous | 8 | A |
| ICM | Collector peak current (repetitive) | 12 | A |
| IB | Base current | 0.2 | mA |
| PTOT | Total dissipation at Tc = 25°C | 60 | W |
| Tstg | Storage temperature | -65 to 150 | °C |
| TJ | Max. operating junction temperature | 150 | °C |
| VCEO(sus) | Collector-emitter sustaining voltage (IB = 0) | 80 | V |
| VCE(sat) | Collector-emitter saturation voltage | 2.0 | V |
| VBE(sat) | Base-emitter saturation voltage | 2.5 | V |
| hFE | DC current gain | 750 |
Key Features
- Monolithic Darlington configuration with integrated antiparallel collector-emitter diode.
- High DC current gain (hFE = 750 at IC = 3 A, VCE = 3 V).
- Low collector-emitter saturation voltage (VCE(sat) = 2.0 V at IC = 3 A, IB = 12 mA).
- Good hFE linearity and high fT frequency.
- ECOPACK® packages with Lead-free second level interconnect, compliant with JEDEC Standard JESD97.
Applications
- Audio amplifiers.
- Linear and switching industrial equipment.
- General-purpose amplifier and low-speed switching applications.
Q & A
- What is the collector-emitter voltage (VCEO) of the BDX53B transistor?
The collector-emitter voltage (VCEO) of the BDX53B transistor is 80 V.
- What is the maximum collector current (IC) for the BDX53B transistor?
The maximum continuous collector current (IC) for the BDX53B transistor is 8 A, and the peak collector current is 12 A.
- What is the DC current gain (hFE) of the BDX53B transistor?
The DC current gain (hFE) of the BDX53B transistor is typically 750 at IC = 3 A and VCE = 3 V.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BDX53B transistor?
The collector-emitter saturation voltage (VCE(sat)) of the BDX53B transistor is 2.0 V at IC = 3 A and IB = 12 mA.
- What are the typical applications of the BDX53B transistor?
The BDX53B transistor is typically used in audio amplifiers, linear and switching industrial equipment, and general-purpose amplifier and low-speed switching applications.
- What is the maximum operating junction temperature (TJ) for the BDX53B transistor?
The maximum operating junction temperature (TJ) for the BDX53B transistor is 150°C.
- What type of package does the BDX53B transistor come in?
The BDX53B transistor comes in a TO-220 package.
- Does the BDX53B transistor have any integrated components?
Yes, the BDX53B transistor has an integrated antiparallel collector-emitter diode.
- What is the storage temperature range for the BDX53B transistor?
The storage temperature range for the BDX53B transistor is -65°C to 150°C.
- Is the BDX53B transistor available in ECOPACK® packages?
Yes, the BDX53B transistor is available in ECOPACK® packages with Lead-free second level interconnect.
