BDX53CG
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onsemi BDX53CG

Manufacturer No:
BDX53CG
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN DARL 100V 8A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BDX53CG is a high-performance NPN Darlington transistor manufactured by onsemi. This bipolar junction transistor (BJT) is designed for medium-power applications and is known for its high current and voltage handling capabilities. The transistor is packaged in a TO-220AB through-hole configuration, making it suitable for a variety of power management and control circuits.

Key Specifications

ParameterValue
Transistor TypeNPN Darlington
Collector-Emitter Voltage (Vce)100 V
Collector Current (Ic)8 A
Power Dissipation (Pd)65 W
Package TypeTO-220AB Through Hole

Key Features

  • High current handling capability of up to 8 A
  • High voltage handling capability of up to 100 V
  • Medium-power dissipation of 65 W
  • Darlington configuration for high current gain
  • TO-220AB package for easy mounting and heat dissipation

Applications

The BDX53CG transistor is suitable for various power management and control applications, including:

  • Power amplifiers and drivers
  • Motor control circuits
  • Relay and solenoid drivers
  • High-current switching applications

Q & A

  1. What is the collector-emitter voltage rating of the BDX53CG transistor?
    The collector-emitter voltage rating is 100 V.
  2. What is the maximum collector current of the BDX53CG transistor?
    The maximum collector current is 8 A.
  3. What is the power dissipation rating of the BDX53CG transistor?
    The power dissipation rating is 65 W.
  4. What package type is the BDX53CG transistor available in?
    The BDX53CG transistor is available in the TO-220AB through-hole package.
  5. What are some common applications of the BDX53CG transistor?
    Common applications include power amplifiers, motor control circuits, relay and solenoid drivers, and high-current switching applications.
  6. What is the advantage of the Darlington configuration in the BDX53CG transistor?
    The Darlington configuration provides a high current gain, making it suitable for high-current applications.
  7. Where can I find detailed specifications for the BDX53CG transistor?
    Detailed specifications can be found in the datasheet available on the manufacturer's website or through distributors like Digi-Key and Mouser.
  8. Is the BDX53CG transistor suitable for high-frequency applications?
    No, the BDX53CG is generally not suited for high-frequency applications due to its Darlington configuration and medium-power characteristics.
  9. How do I ensure proper heat dissipation for the BDX53CG transistor?
    Proper heat dissipation can be ensured by using a suitable heat sink and ensuring good thermal contact between the transistor and the heat sink.
  10. Can the BDX53CG transistor be used in parallel for higher current handling?
    Yes, but careful consideration must be given to ensure balanced current distribution and proper thermal management when using multiple transistors in parallel.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:2V @ 12mA, 3A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 3A, 3V
Power - Max:65 W
Frequency - Transition:- 
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Same Series
BDX53BG
BDX53BG
TRANS NPN DARL 80V 8A TO220
BDX53B
BDX53B
TRANS NPN DARL 80V 8A TO220
BDX54BG
BDX54BG
TRANS PNP DARL 80V 8A TO220
BDX54CG
BDX54CG
TRANS PNP DARL 100V 8A TO220

Similar Products

Part Number BDX53CG BDX54CG BDX33CG BDX53BG BDX53C
Manufacturer onsemi onsemi onsemi onsemi STMicroelectronics
Product Status Active Obsolete Active Active Active
Transistor Type NPN - Darlington PNP - Darlington NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 8 A 8 A 10 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 80 V 100 V
Vce Saturation (Max) @ Ib, Ic 2V @ 12mA, 3A 2V @ 12mA, 3A 2.5V @ 6mA, 3A 2V @ 12mA, 3A 2V @ 12mA, 3A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A, 3V 750 @ 3A, 3V 750 @ 3A, 3V 750 @ 3A, 3V 750 @ 3A, 3V
Power - Max 65 W 65 W 70 W 65 W 60 W
Frequency - Transition - - - - -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220

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