Overview
The BDX54C is a PNP power Darlington transistor manufactured by STMicroelectronics. It is designed using planar base island technology with a monolithic Darlington configuration, making it suitable for general-purpose amplifier and low-speed switching applications. This transistor is part of STMicroelectronics' comprehensive portfolio of Darlington transistors, which offer a range of voltage and current capabilities.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Type of Transistor | PNP Darlington | |
Collector-Emitter Voltage | 100 | V |
Collector Current | 8 A (Continuous), 12 A (Peak) | A |
Power Dissipation | 60 W | W |
Current Gain (hFE) | 750 (Typical at IC = 3.0 A) | |
Collector-Emitter Saturation Voltage | 2.0 V (Max at IC = 3.0 A) | V |
Base-Emitter Saturation Voltage | 2.5 V (Max at IC = 3.0 A) | V |
Case | TO220AB | |
Mounting | THT (Through-Hole Technology) | |
Operating Temperature | -55°C to 150°C | °C |
Key Features
- Monolithic Darlington Configuration: Integrated with built-in base-emitter shunt resistors, enhancing stability and performance.
- High DC Current Gain: With a typical hFE of 750 at IC = 3.0 A, ensuring high amplification capabilities.
- Low Collector-Emitter Saturation Voltage: VCE(sat) of 2.0 V (Max) at IC = 3.0 A, reducing power losses.
- High Collector-Emitter Sustaining Voltage: VCEO(sus) of 100 Vdc (Min), providing robust voltage handling.
- Integrated Antiparallel Collector-Emitter Diode: Enhances the transistor's ability to handle reverse currents and improves overall reliability.
Applications
- General-Purpose Amplifiers: Suitable for various amplifier circuits due to its high current gain and low saturation voltage.
- Low-Speed Switching Applications: Ideal for applications requiring reliable switching with minimal power loss.
- Power Supplies and Motor Control: Can be used in power supply circuits and motor control systems due to its high current and voltage handling capabilities.
- Automotive and Industrial Systems: Applicable in automotive and industrial environments where robust and reliable transistor performance is required.
Q & A
- What is the collector-emitter voltage of the BDX54C transistor?
The collector-emitter voltage (VCE) of the BDX54C transistor is 100 V.
- What is the maximum collector current of the BDX54C transistor?
The maximum continuous collector current is 8 A, and the peak collector current is 12 A.
- What is the typical current gain (hFE) of the BDX54C transistor?
The typical current gain (hFE) of the BDX54C transistor is 750 at IC = 3.0 A.
- What is the collector-emitter saturation voltage of the BDX54C transistor?
The collector-emitter saturation voltage (VCE(sat)) is 2.0 V (Max) at IC = 3.0 A.
- What is the operating temperature range of the BDX54C transistor?
The operating temperature range is -55°C to 150°C.
- What type of mounting does the BDX54C transistor use?
The BDX54C transistor uses Through-Hole Technology (THT) mounting.
- What is the package type of the BDX54C transistor?
The package type is TO220AB.
- Is the BDX54C transistor RoHS compliant?
Yes, the BDX54C transistor is RoHS compliant with an Ecopack2 grade.
- What are some common applications of the BDX54C transistor?
Common applications include general-purpose amplifiers, low-speed switching, power supplies, and motor control systems.
- Does the BDX54C transistor have an integrated antiparallel collector-emitter diode?
Yes, the BDX54C transistor has an integrated antiparallel collector-emitter diode.