BDX54C
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STMicroelectronics BDX54C

Manufacturer No:
BDX54C
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS PNP DARL 100V 8A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BDX54C is a PNP power Darlington transistor manufactured by STMicroelectronics. It is designed using planar base island technology with a monolithic Darlington configuration, making it suitable for general-purpose amplifier and low-speed switching applications. This transistor is part of STMicroelectronics' comprehensive portfolio of Darlington transistors, which offer a range of voltage and current capabilities.

Key Specifications

Parameter Value Unit
Type of Transistor PNP Darlington
Collector-Emitter Voltage 100 V
Collector Current 8 A (Continuous), 12 A (Peak) A
Power Dissipation 60 W W
Current Gain (hFE) 750 (Typical at IC = 3.0 A)
Collector-Emitter Saturation Voltage 2.0 V (Max at IC = 3.0 A) V
Base-Emitter Saturation Voltage 2.5 V (Max at IC = 3.0 A) V
Case TO220AB
Mounting THT (Through-Hole Technology)
Operating Temperature -55°C to 150°C °C

Key Features

  • Monolithic Darlington Configuration: Integrated with built-in base-emitter shunt resistors, enhancing stability and performance.
  • High DC Current Gain: With a typical hFE of 750 at IC = 3.0 A, ensuring high amplification capabilities.
  • Low Collector-Emitter Saturation Voltage: VCE(sat) of 2.0 V (Max) at IC = 3.0 A, reducing power losses.
  • High Collector-Emitter Sustaining Voltage: VCEO(sus) of 100 Vdc (Min), providing robust voltage handling.
  • Integrated Antiparallel Collector-Emitter Diode: Enhances the transistor's ability to handle reverse currents and improves overall reliability.

Applications

  • General-Purpose Amplifiers: Suitable for various amplifier circuits due to its high current gain and low saturation voltage.
  • Low-Speed Switching Applications: Ideal for applications requiring reliable switching with minimal power loss.
  • Power Supplies and Motor Control: Can be used in power supply circuits and motor control systems due to its high current and voltage handling capabilities.
  • Automotive and Industrial Systems: Applicable in automotive and industrial environments where robust and reliable transistor performance is required.

Q & A

  1. What is the collector-emitter voltage of the BDX54C transistor?

    The collector-emitter voltage (VCE) of the BDX54C transistor is 100 V.

  2. What is the maximum collector current of the BDX54C transistor?

    The maximum continuous collector current is 8 A, and the peak collector current is 12 A.

  3. What is the typical current gain (hFE) of the BDX54C transistor?

    The typical current gain (hFE) of the BDX54C transistor is 750 at IC = 3.0 A.

  4. What is the collector-emitter saturation voltage of the BDX54C transistor?

    The collector-emitter saturation voltage (VCE(sat)) is 2.0 V (Max) at IC = 3.0 A.

  5. What is the operating temperature range of the BDX54C transistor?

    The operating temperature range is -55°C to 150°C.

  6. What type of mounting does the BDX54C transistor use?

    The BDX54C transistor uses Through-Hole Technology (THT) mounting.

  7. What is the package type of the BDX54C transistor?

    The package type is TO220AB.

  8. Is the BDX54C transistor RoHS compliant?

    Yes, the BDX54C transistor is RoHS compliant with an Ecopack2 grade.

  9. What are some common applications of the BDX54C transistor?

    Common applications include general-purpose amplifiers, low-speed switching, power supplies, and motor control systems.

  10. Does the BDX54C transistor have an integrated antiparallel collector-emitter diode?

    Yes, the BDX54C transistor has an integrated antiparallel collector-emitter diode.

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:2V @ 12mA, 3A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 3A, 3V
Power - Max:60 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Same Series
500-080
500-080
MOUNT CIRCULAR TO5 0.071"

Similar Products

Part Number BDX54C BDX54CG BDX34C BDX53C BDX54B
Manufacturer STMicroelectronics onsemi STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Active Obsolete
Transistor Type PNP - Darlington PNP - Darlington PNP - Darlington NPN - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 8 A 8 A 10 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V 80 V
Vce Saturation (Max) @ Ib, Ic 2V @ 12mA, 3A 2V @ 12mA, 3A 2.5V @ 6mA, 3A 2V @ 12mA, 3A 2V @ 12mA, 3A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A, 3V 750 @ 3A, 3V 750 @ 3A, 3V 750 @ 3A, 3V 750 @ 3A, 3V
Power - Max 60 W 65 W 70 W 60 W 60 W
Frequency - Transition - - - - -
Operating Temperature 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220

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