BCP56T1G
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onsemi BCP56T1G

Manufacturer No:
BCP56T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 1A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP56T1G is an NPN bipolar transistor manufactured by onsemi, designed specifically for use in audio amplifier applications. This transistor is housed in the SOT-223 package, which is optimized for medium power surface mount applications. The SOT-223 package allows for soldering using either wave or reflow methods, with formed leads that absorb thermal stress during soldering, thereby preventing damage to the die. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. Additionally, the BCP56T1G is Pb-free, halogen-free/BFR-free, and RoHS compliant.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 100 Vdc
Emitter-Base Voltage VEBO 5 Vdc
Collector Current (Continuous) IC 1 A
Collector Current (Peak) ICM 2 A
Total Power Dissipation @ TA = 25°C PD 1.5 W
Operating and Storage Temperature Range TJ, Tstg -65 to 150 °C
Current-Gain Bandwidth Product fT 130 MHz

Key Features

  • High Current Capability: The BCP56T1G can handle a continuous collector current of 1 A and a peak collector current of 2 A.
  • SOT-223 Package: Designed for medium power surface mount applications, this package can be soldered using wave or reflow methods and absorbs thermal stress during soldering.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Environmental Compliance: Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • PNP Complement: The PNP complement of the BCP56T1G is the BCP53T1G.

Applications

The BCP56T1G is primarily designed for use in audio amplifier applications. Its high current capability and medium power handling make it suitable for a variety of audio amplification tasks. Additionally, its AEC-Q101 qualification and PPAP capability make it a reliable choice for automotive and other demanding applications.

Q & A

  1. What is the maximum collector-emitter voltage of the BCP56T1G?

    The maximum collector-emitter voltage (VCEO) is 80 Vdc.

  2. What is the continuous collector current rating of the BCP56T1G?

    The continuous collector current (IC) is 1 A.

  3. What package type is the BCP56T1G housed in?

    The BCP56T1G is housed in the SOT-223 package.

  4. Is the BCP56T1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

  5. Is the BCP56T1G environmentally compliant?

    Yes, it is Pb-free, halogen-free/BFR-free, and RoHS compliant.

  6. What is the PNP complement of the BCP56T1G?

    The PNP complement is the BCP53T1G.

  7. What is the total power dissipation of the BCP56T1G at 25°C?

    The total power dissipation (PD) at 25°C is 1.5 W.

  8. What is the operating and storage temperature range of the BCP56T1G?

    The operating and storage temperature range is -65 to 150°C.

  9. How can the SOT-223 package be soldered?

    The SOT-223 package can be soldered using either wave or reflow methods.

  10. What is the current-gain bandwidth product of the BCP56T1G?

    The current-gain bandwidth product (fT) is 130 MHz.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:1.5 W
Frequency - Transition:130MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223 (TO-261)
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Similar Products

Part Number BCP56T1G BCP56T3G BCP53T1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type NPN NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 1.5 W 1.5 W 1.5 W
Frequency - Transition 130MHz 130MHz 50MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261)

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