BCP56-10T3G
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onsemi BCP56-10T3G

Manufacturer No:
BCP56-10T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 1A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP56-10T3G is an NPN Silicon Epitaxial Transistor designed and manufactured by onsemi. This device is specifically tailored for use in audio amplifier applications and is housed in the SOT-223 package, which is suitable for medium power surface mount applications. The transistor offers high current handling and is available in various hFE (DC current gain) windows, making it versatile for different design requirements.

Key Specifications

Parameter Value Unit
Collector Current (IC) 1.0 A
Collector-Emitter Voltage (VCEO) 80 Vdc
Collector-Base Voltage (VCBO) 100 Vdc
Emitter-Base Voltage (VEBO) 5.0 Vdc
DC Current Gain (hFE) 63 - 160 -
Collector-Emitter Saturation Voltage (VCE(sat)) 0.5 V
Base-Emitter Saturation Voltage (VBE(sat)) 1.0 V
Current-Gain Bandwidth Product (fT) 130 MHz
Power Dissipation (PT) 1.5 W
Package Type SOT-223-4 / TO-261-4D -

Key Features

  • High current handling up to 1.0 A.
  • SOT-223 package suitable for medium power surface mount applications.
  • Formed leads absorb thermal stress during soldering, preventing damage to the die.
  • Available in different hFE windows (63 - 160) for various design needs.
  • Pb-free, Halogen free/BFR free, and RoHS compliant.
  • NSV and S prefixes available for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.

Applications

The BCP56-10T3G is primarily designed for use in audio amplifier applications. Its high current handling and low VCE(sat) make it suitable for a variety of medium power amplification tasks.

Q & A

  1. What is the maximum collector current of the BCP56-10T3G?

    The maximum collector current is 1.0 A.

  2. What is the collector-emitter voltage (VCEO) of the BCP56-10T3G?

    The collector-emitter voltage (VCEO) is 80 Vdc.

  3. What is the DC current gain (hFE) range of the BCP56-10T3G?

    The DC current gain (hFE) range is 63 - 160.

  4. What package type is the BCP56-10T3G available in?

    The BCP56-10T3G is available in the SOT-223-4 / TO-261-4D package.

  5. Is the BCP56-10T3G Pb-free and RoHS compliant?

    Yes, the BCP56-10T3G is Pb-free, Halogen free/BFR free, and RoHS compliant.

  6. What are the typical applications of the BCP56-10T3G?

    The BCP56-10T3G is primarily used in audio amplifier applications.

  7. How can the SOT-223 package of the BCP56-10T3G be soldered?

    The SOT-223 package can be soldered using wave or reflow methods.

  8. Does the BCP56-10T3G have any special certifications for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.

  9. What is the power dissipation (PT) of the BCP56-10T3G?

    The power dissipation (PT) is 1.5 W.

  10. What is the current-gain bandwidth product (fT) of the BCP56-10T3G?

    The current-gain bandwidth product (fT) is 130 MHz.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:1.5 W
Frequency - Transition:130MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223 (TO-261)
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In Stock

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Similar Products

Part Number BCP56-10T3G BCP56-16T3G BCP56-10T1G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 1.5 W 1.5 W 1.5 W
Frequency - Transition 130MHz 130MHz 130MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261)

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