SBCP56-10T1G
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onsemi SBCP56-10T1G

Manufacturer No:
SBCP56-10T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 1A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SBCP56-10T1G is an NPN silicon epitaxial transistor from onsemi, part of the BCP56 series. This transistor is designed for medium power surface mount applications and is particularly suited for use in audio amplifier circuits. It is housed in the SOT-223 package, which is optimized for thermal stress absorption during soldering, ensuring the integrity of the device. The SBCP56-10T1G is Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly and suitable for a wide range of applications.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Emitter VoltageVCEO80Vdc
Collector-Base VoltageVCBO100Vdc
Emitter-Base VoltageVEBO5Vdc
Collector CurrentIC1Adc
Collector Current - PeakICM2Adc
Total Power Dissipation @ TA = 25°CPD1.5 W
Operating and Storage Temperature RangeTJ, Tstg-65 to 150°C
Thermal Resistance, Junction-to-AmbientRJA83.3°C/W
Maximum Temperature for Soldering PurposesTL260°C Sec
DC Current Gain (IC = 150 mA, VCE = 2.0 V)hFE100
Collector-Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA)VCE(sat)0.5Vdc
Base-Emitter On Voltage (IC = 500 mA, VCE = 2.0 Vdc)VBE(on)1.0Vdc

Key Features

  • High Current: 1.0 A
  • SOT-223 package suitable for medium power surface mount applications
  • Pb-free, halogen-free, and RoHS compliant
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications
  • Available in 12 mm Tape and Reel (1000 units) and 13 inch Tape and Reel (4000 units)
  • PNP complement available as BCP53T1G
  • Thermal stress absorption during soldering due to formed leads

Applications

The SBCP56-10T1G transistor is primarily designed for use in audio amplifier applications. Its high current handling and medium power capabilities make it suitable for a variety of electronic circuits, including:

  • Audio amplifiers
  • General-purpose switching and amplification
  • Automotive electronics (AEC-Q101 qualified)
  • Other surface mount applications requiring high current and reliability

Q & A

  1. What is the maximum collector-emitter voltage of the SBCP56-10T1G transistor?
    The maximum collector-emitter voltage (VCEO) is 80 Vdc.
  2. What is the maximum collector current of the SBCP56-10T1G transistor?
    The maximum collector current (IC) is 1 Adc, with a peak current of 2 Adc.
  3. What is the thermal resistance of the SBCP56-10T1G transistor?
    The thermal resistance, junction-to-ambient (RJA), is 83.3 °C/W.
  4. Is the SBCP56-10T1G transistor RoHS compliant?
    Yes, the SBCP56-10T1G is Pb-free, halogen-free, and RoHS compliant.
  5. What is the DC current gain of the SBCP56-10T1G transistor?
    The DC current gain (hFE) at IC = 150 mA and VCE = 2.0 V is 100.
  6. What is the collector-emitter saturation voltage of the SBCP56-10T1G transistor?
    The collector-emitter saturation voltage (VCE(sat)) at IC = 500 mA and IB = 50 mA is 0.5 Vdc.
  7. What is the base-emitter on voltage of the SBCP56-10T1G transistor?
    The base-emitter on voltage (VBE(on)) at IC = 500 mA and VCE = 2.0 Vdc is 1.0 Vdc.
  8. What package type is the SBCP56-10T1G transistor available in?
    The transistor is available in the SOT-223 package.
  9. Is the SBCP56-10T1G transistor suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.
  10. How is the SBCP56-10T1G transistor shipped?
    The transistor is available in 12 mm Tape and Reel (1000 units) and 13 inch Tape and Reel (4000 units).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:1.5 W
Frequency - Transition:130MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223 (TO-261)
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Similar Products

Part Number SBCP56-10T1G SBCP56-16T1G SBCP53-10T1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type NPN NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 1.5 W 1.5 W 1.5 W
Frequency - Transition 130MHz 130MHz 50MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261)

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