Overview
The NSVBCP56-10T3G is an NPN Silicon Epitaxial Transistor from onsemi, designed for medium power surface mount applications. This transistor is part of the BCP56 series and is housed in the SOT-223 package. It is particularly suited for audio amplifier applications due to its high current handling capabilities and robust thermal characteristics.
Although the device is discontinued and not recommended for new designs, it remains relevant for existing projects and maintenance. The NSV prefix indicates that this device meets unique site and control change requirements, making it suitable for automotive and other specialized applications.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | 80 | Vdc |
| Collector-Base Voltage | VCBO | - | - | 100 | Vdc |
| Emitter-Base Voltage | VEBO | - | - | 5.0 | Vdc |
| Collector Current | IC | - | - | 1.0 | Adc |
| Collector Current - Peak | ICM | - | - | 2.0 | Adc |
| Total Power Dissipation @ TA = 25°C | PD | - | - | 1.5 W | - |
| Operating and Storage Temperature Range | TJ, Tstg | -65 | - | 150 | °C |
| Thermal Resistance, Junction-to-Ambient | RθJA | - | - | 83.3 °C/W | - |
| DC Current Gain (IC = 150 mA, VCE = 2.0 V) | hFE | 40 | - | 250 | - |
| Collector-Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) | VCE(sat) | - | - | 0.5 Vdc | - |
Key Features
- High Current Capability: The NSVBCP56-10T3G can handle up to 1.0 A of collector current, making it suitable for medium power applications.
- SOT-223 Package: The device is housed in the SOT-223 package, which can be soldered using wave or reflow methods. The formed leads absorb thermal stress during soldering, preventing damage to the die.
- Automotive Qualification: With the NSV prefix, this transistor meets AEC-Q101 qualification and is PPAP capable, making it suitable for automotive and other specialized applications.
- Environmental Compliance: The device is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- PNP Complement: The PNP complement for this transistor is the BCP53T1G.
Applications
The NSVBCP56-10T3G is primarily designed for use in audio amplifier applications due to its high current handling and robust thermal characteristics. It is also suitable for other medium power surface mount applications, including:
- Audio amplifiers
- Automotive electronics
- Industrial control systems
- Power management circuits
Q & A
- What is the maximum collector current of the NSVBCP56-10T3G?
The maximum collector current is 1.0 A.
- What package type is the NSVBCP56-10T3G housed in?
The device is housed in the SOT-223 package.
- Is the NSVBCP56-10T3G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable.
- What is the PNP complement of the NSVBCP56-10T3G?
The PNP complement is the BCP53T1G.
- Is the NSVBCP56-10T3G environmentally compliant?
Yes, it is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What is the maximum collector-emitter voltage of the NSVBCP56-10T3G?
The maximum collector-emitter voltage is 80 Vdc.
- What is the thermal resistance, junction-to-ambient, of the NSVBCP56-10T3G?
The thermal resistance is 83.3 °C/W.
- Can the NSVBCP56-10T3G be soldered using wave or reflow methods?
Yes, it can be soldered using either wave or reflow methods.
- What is the DC current gain of the NSVBCP56-10T3G at IC = 150 mA and VCE = 2.0 V?
The DC current gain (hFE) is typically 40 to 250.
- Is the NSVBCP56-10T3G recommended for new designs?
No, the device is discontinued and not recommended for new designs.
