SBCP56-16T3G
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onsemi SBCP56-16T3G

Manufacturer No:
SBCP56-16T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 1A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The SBCP56-16T3G is a high-performance NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for medium power surface mount applications and is housed in the SOT-223 (TO-261) package. It is known for its high current handling and robust thermal characteristics, making it suitable for a variety of applications, including the automotive industry. The device is RoHS compliant, PbFree, and halogen-free, ensuring environmental sustainability and compliance with regulatory standards.

Key Specifications

SpecificationValueUnit
Manufactureronsemi
Part NumberSBCP56-16T3G
Transistor TypeNPN
PolarizationBipolar
Collector-Emitter Voltage (Vceo)80V
Collector Current (Ic)1A
Power Dissipation (Pd)1.5W
Current Gain (hfe)100-250
Frequency (fT)130MHz
Package TypeSOT-223 (TO-261)
Mounting TypeSMD
Operating Temperature Range-65°C to 150°C
RoHS ComplianceYes
Reach StatusCompliant

Key Features

  • High Current Handling: The SBCP56-16T3G can handle a maximum collector current of 1 A, making it suitable for applications requiring high current.
  • Medium Power Surface Mount: The transistor is housed in the SOT-223 package, designed for surface mount applications and capable of absorbing thermal stress during soldering.
  • Robust Thermal Characteristics: The device has a maximum operating temperature of 150°C and a thermal resistance of 83.3°C/W, ensuring reliable performance under various thermal conditions.
  • Environmental Compliance: The transistor is RoHS compliant, PbFree, and halogen-free, aligning with environmental and regulatory standards.
  • Automotive Qualification: The SBCP56-16T3G is AECQ101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Applications

The SBCP56-16T3G is versatile and can be used in a variety of applications, including:

  • Automotive Industry: Due to its AECQ101 qualification and robust specifications, it is well-suited for automotive applications.
  • Power Amplifiers: Its high current handling and medium power capabilities make it a good choice for power amplifier circuits.
  • Switching Circuits: The transistor's high frequency response (130 MHz) and current gain make it suitable for switching applications.
  • General Purpose Amplification: It can be used in various general-purpose amplification circuits where high reliability and performance are required.

Q & A

  1. What is the maximum collector current of the SBCP56-16T3G?
    The maximum collector current is 1 A.
  2. What is the collector-emitter breakdown voltage of the SBCP56-16T3G?
    The collector-emitter breakdown voltage is 80 V.
  3. What is the power dissipation of the SBCP56-16T3G?
    The power dissipation is 1.5 W.
  4. What is the package type of the SBCP56-16T3G?
    The package type is SOT-223 (TO-261).
  5. Is the SBCP56-16T3G RoHS compliant?
    Yes, the SBCP56-16T3G is RoHS compliant.
  6. What is the operating temperature range of the SBCP56-16T3G?
    The operating temperature range is -65°C to 150°C.
  7. What is the current gain of the SBCP56-16T3G?
    The current gain (hfe) is between 100 and 250.
  8. What is the frequency response of the SBCP56-16T3G?
    The frequency response (fT) is 130 MHz.
  9. Is the SBCP56-16T3G suitable for automotive applications?
    Yes, it is AECQ101 qualified and PPAP capable, making it suitable for automotive applications.
  10. How is the SBCP56-16T3G packaged for distribution?
    The transistor is available in tape and reel packaging, with 4000 units per full reel.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:1.5 W
Frequency - Transition:130MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223 (TO-261)
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Similar Products

Part Number SBCP56-16T3G SBCP56-16T1G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 1.5 W 1.5 W
Frequency - Transition 130MHz 130MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261)

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