SBCP56T1G
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onsemi SBCP56T1G

Manufacturer No:
SBCP56T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 1A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The SBCP56T1G is an NPN Silicon Epitaxial Transistor from onsemi, designed for medium power surface mount applications. This transistor is part of the BCP56 series and is particularly suited for audio amplifier applications. It is housed in the SOT-223 package, which is optimized for thermal stress absorption during soldering, ensuring the integrity of the device. The SBCP56T1G is Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly and compliant with current regulations.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 100 Vdc
Emitter-Base Voltage VEBO 5 Vdc
Collector Current IC 1 Adc
Collector Current - Peak ICM 2 Adc
Total Power Dissipation @ TA = 25°C PD 1.5 W
Operating and Storage Temperature Range TJ, Tstg -65 to 150 °C
Thermal Resistance, Junction-to-Ambient RJA 83.3 °C/W
Maximum Temperature for Soldering Purposes TL 260 °C Sec

Key Features

  • High Current Capability: The transistor can handle up to 1 A of collector current, making it suitable for medium power applications.
  • SOT-223 Package: Designed for surface mount applications, this package can be soldered using wave or reflow methods and absorbs thermal stress during soldering.
  • Pb-free, Halogen-free, and RoHS Compliant: Environmentally friendly and compliant with current regulations.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • PNP Complement: The BCP53T1G is the PNP complement to the BCP56T1G.

Applications

The SBCP56T1G is primarily designed for use in audio amplifier applications due to its high current handling and medium power capabilities. It is also suitable for other surface mount applications requiring reliable and efficient transistor performance.

Q & A

  1. What is the maximum collector current of the SBCP56T1G?

    The maximum collector current is 1 A.

  2. What is the collector-emitter voltage rating of the SBCP56T1G?

    The collector-emitter voltage rating is 80 Vdc.

  3. What package type is the SBCP56T1G housed in?

    The transistor is housed in the SOT-223 package.

  4. Is the SBCP56T1G Pb-free and RoHS compliant?
  5. What are the operating and storage temperature ranges for the SBCP56T1G?

    The operating and storage temperature ranges are -65 to 150°C.

  6. What is the thermal resistance, junction-to-ambient, for the SBCP56T1G?

    The thermal resistance, junction-to-ambient, is 83.3°C/W.

  7. What is the maximum temperature for soldering purposes?

    The maximum temperature for soldering purposes is 260°C for 10 seconds.

  8. Is the SBCP56T1G AEC-Q101 qualified?
  9. What is the PNP complement to the BCP56T1G?

    The PNP complement is the BCP53T1G.

  10. What are typical applications for the SBCP56T1G?

    The SBCP56T1G is typically used in audio amplifier applications and other medium power surface mount applications.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:1.5 W
Frequency - Transition:130MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223 (TO-261)
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Similar Products

Part Number SBCP56T1G SBCP56T3G SBCP53T1G SBCP56T1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Transistor Type NPN NPN PNP NPN
Current - Collector (Ic) (Max) 1 A 1 A 1.5 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 1.5 W 1.5 W 1.5 W 1.5 W
Frequency - Transition 130MHz 130MHz 50MHz 130MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261)

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