SBCP53-10T1G
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onsemi SBCP53-10T1G

Manufacturer No:
SBCP53-10T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 80V 1.5A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SBCP53-10T1G is a PNP Silicon Epitaxial transistor manufactured by onsemi. This device is specifically designed for use in audio amplifier applications and is housed in the SOT-223 package, which is suitable for medium power surface mount applications. The SOT-223 package is designed to absorb thermal stress during soldering, preventing damage to the die. The SBCP53-10T1G is part of the BCP53 series, which includes various models with different current ratings and is AEC-Q101 qualified, making it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Emitter VoltageVCEO-80V
Collector-Base VoltageVCBO-100V
Emitter-Base VoltageVEBO-5.0V
Collector CurrentIC1.5A
Peak Collector Current (single pulse, tp ≤ 1 ms)ICM3.0A
Base Current - ContinuousIB-0.3A
Base Current - Peak (single pulse, tp ≤ 1 ms)IBM-0.4A
Total Power Dissipation @ TA = 25°CPD12W
Operating and Storage Temperature RangeTJ, Tstg-65 to +150°C
Thermal Resistance, Junction-to-Ambient (Surface Mounted)RJA83.3°C/W
Lead Temperature for SolderingTL260°C s

Key Features

  • High current capability, with a collector current of up to 1.5 A and peak collector current of up to 3.0 A.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • SOT-223 package designed for medium power surface mount applications, with formed leads to absorb thermal stress during soldering.
  • NPN complement is BCP56.
  • Device marking and packaging options include S and NSV prefixes for unique site and control change requirements.

Applications

The SBCP53-10T1G is primarily designed for use in audio amplifier applications. Its high current capability and robust thermal performance make it suitable for a variety of medium power surface mount applications, including:

  • Audio amplifiers
  • Automotive electronics
  • Industrial control systems
  • Power management circuits

Q & A

  1. What is the collector-emitter voltage rating of the SBCP53-10T1G?
    The collector-emitter voltage rating is -80 V.
  2. What is the maximum collector current of the SBCP53-10T1G?
    The maximum collector current is 1.5 A.
  3. Is the SBCP53-10T1G RoHS compliant?
    Yes, the SBCP53-10T1G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
  4. What package type is used for the SBCP53-10T1G?
    The device is housed in the SOT-223 package.
  5. Can the SBCP53-10T1G be used in automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  6. What is the thermal resistance, junction-to-ambient, for the SBCP53-10T1G?
    The thermal resistance, junction-to-ambient, is 83.3 °C/W.
  7. How is the SBCP53-10T1G marked for identification?
    The device marking includes codes such as BCP53-10T1G = AH-10, and it also includes information on assembly location, year, and work week.
  8. What is the lead temperature for soldering the SBCP53-10T1G?
    The lead temperature for soldering is 260 °C for 10 seconds.
  9. Can the SBCP53-10T1G be soldered using wave or reflow methods?
    Yes, the SOT-223 package can be soldered using either wave or reflow methods.
  10. What is the operating and storage temperature range for the SBCP53-10T1G?
    The operating and storage temperature range is -65 to +150 °C.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:1.5 W
Frequency - Transition:50MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223 (TO-261)
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Same Series
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Similar Products

Part Number SBCP53-10T1G SBCP53-16T1G SBCP56-10T1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type PNP PNP NPN
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 1.5 W 1.5 W 1.5 W
Frequency - Transition 50MHz 50MHz 130MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261)

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