SBCP53-16T1G
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onsemi SBCP53-16T1G

Manufacturer No:
SBCP53-16T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 80V 1.5A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SBCP53-16T1G is a PNP silicon epitaxial transistor manufactured by onsemi. This device is designed for general-purpose amplifier applications, particularly in audio amplifiers. It is housed in the SOT-223 package, which is suitable for medium power surface mount applications. The SOT-223 package can be soldered using wave or reflow methods, and its formed leads absorb thermal stress during soldering, preventing damage to the die. The transistor is AEC-Q101 qualified, making it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-free, halogen-free, and RoHS compliant.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Emitter VoltageVCEO-80V
Collector-Base VoltageVCBO-100V
Emitter-Base VoltageVEBO-5.0V
Continuous Collector CurrentIC1.5A
Peak Collector Current (single pulse, tp ≤ 1 ms)ICM3.0A
Continuous Base CurrentIB-0.3A
Peak Base Current (single pulse, tp ≤ 1 ms)IBM-0.4A
Total Power Dissipation @ TA = 25°CPD1.5W
Operating and Storage Temperature RangeTJ, Tstg-65 to +150°C
Transition FrequencyfT50MHz
DC Current Gain (hFE) MinhFE100
Collector-Emitter Saturation VoltageVCE(sat)-0.5V
Base-Emitter On VoltageVBE(on)-1.0V
Package TypeSOT-223

Key Features

  • High current capability with a continuous collector current of 1.5 A and peak collector current of 3.0 A.
  • AEC-Q101 qualified, making it suitable for automotive and other demanding applications.
  • Pb-free, halogen-free, and RoHS compliant, ensuring environmental compliance.
  • SOT-223 package designed for medium power surface mount applications, with formed leads that absorb thermal stress during soldering.
  • High DC current gain (hFE) with a minimum value of 100.
  • Transition frequency of 50 MHz, suitable for high-frequency applications.

Applications

The SBCP53-16T1G is primarily designed for use in audio amplifier applications. It is also suitable for various industrial and power management applications due to its high current and power handling capabilities. The AEC-Q101 qualification makes it a reliable choice for automotive and other applications requiring stringent quality standards.

Q & A

  1. What is the maximum collector-emitter voltage of the SBCP53-16T1G?
    The maximum collector-emitter voltage is -80 V.
  2. What is the continuous collector current of the SBCP53-16T1G?
    The continuous collector current is 1.5 A.
  3. What is the total power dissipation of the SBCP53-16T1G at 25°C?
    The total power dissipation at 25°C is 1.5 W.
  4. What is the operating temperature range of the SBCP53-16T1G?
    The operating and storage temperature range is -65 to +150°C.
  5. Is the SBCP53-16T1G RoHS compliant?
    Yes, the SBCP53-16T1G is Pb-free, halogen-free, and RoHS compliant.
  6. What is the transition frequency of the SBCP53-16T1G?
    The transition frequency is 50 MHz.
  7. What is the DC current gain (hFE) of the SBCP53-16T1G?
    The minimum DC current gain (hFE) is 100.
  8. What package type is the SBCP53-16T1G housed in?
    The SBCP53-16T1G is housed in the SOT-223 package.
  9. Is the SBCP53-16T1G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified, making it suitable for automotive and other demanding applications.
  10. How can the SBCP53-16T1G be soldered?
    The SBCP53-16T1G can be soldered using wave or reflow methods.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:1.5 W
Frequency - Transition:50MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223 (TO-261)
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Similar Products

Part Number SBCP53-16T1G SBCP56-16T1G SBCP53-10T1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type PNP NPN PNP
Current - Collector (Ic) (Max) 1.5 A 1 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 1.5 W 1.5 W 1.5 W
Frequency - Transition 50MHz 130MHz 50MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261)

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