Overview
The 2N7002DW-G is a dual N-channel enhancement mode MOSFET produced by ON Semiconductor. This device is designed to offer low on-state resistance, low gate threshold voltage, and fast switching speeds, making it suitable for a variety of high-efficiency power management applications. The MOSFET is packaged in an ultra-small surface mount SC-88/SC70-6/SOT-363 package, which is Pb-free, halogen-free, and RoHS compliant.
Key Specifications
| Parameter | Symbol | Min | Unit | Test Conditions | ||
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDSS | 60 | - | - | V | VGS = 0V, ID = 10µA |
| Gate-Source Threshold Voltage | VGS(TH) | 1.0 | - | 2.0 | V | VDS = VGS, ID = 250µA |
| On-State Drain Current | ID(ON) | 0.50 | 1.43 | - | A | VGS = 10V, VDS = 7.5V |
| Static Drain-Source On-Resistance | RDS(ON) | - | - | 7.5 | Ω | VGS = 10V, ID = 0.5A |
| Input Capacitance | Ciss | - | - | 50 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Turn-On Delay Time | tD(ON) | - | - | 20 | ns | VDD = 30V, ID = 0.2A, VGEN = 10V, RL = 150Ω, RGEN = 25Ω |
| Turn-Off Delay Time | tD(OFF) | - | - | 20 | ns | VDD = 30V, ID = 0.2A, VGEN = 10V, RL = 150Ω, RGEN = 25Ω |
Key Features
- Dual N-Channel MOSFET
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Ultra-Small Surface Mount Package (SC-88/SC70-6/SOT-363)
- Pb-free, Halogen-free, and RoHS Compliant
- Totally Lead-Free and Green Device
Applications
- Motor Control
- Power Management Functions
- Low Side Load Switch
- Level Shift Circuits
- DC-DC Converter
- Portable Applications (e.g., DSC, PDA)
Q & A
- What is the maximum drain-source breakdown voltage of the 2N7002DW-G?
The maximum drain-source breakdown voltage is 60V.
- What is the typical gate-source threshold voltage?
The typical gate-source threshold voltage is between 1.0V and 2.0V.
- What is the maximum on-state drain current?
The maximum on-state drain current is 1.43A when VGS = 10V and VDS = 7.5V.
- What is the static drain-source on-resistance?
The static drain-source on-resistance is typically 7.5Ω when VGS = 10V and ID = 0.5A.
- What is the input capacitance of the MOSFET?
The input capacitance is typically 50pF when VDS = 25V, VGS = 0V, and f = 1.0MHz.
- What are the turn-on and turn-off delay times?
The turn-on delay time is typically 20ns, and the turn-off delay time is also typically 20ns under specified test conditions.
- Is the 2N7002DW-G RoHS compliant?
- What are the typical applications of the 2N7002DW-G?
The typical applications include motor control, power management functions, low side load switch, level shift circuits, DC-DC converter, and portable applications.
- What is the operating temperature range of the 2N7002DW-G?
The operating temperature range is from -55°C to +150°C.
- What is the thermal resistance, junction to ambient, of the 2N7002DW-G?
The thermal resistance, junction to ambient, is typically 410°C/W under specified mounting conditions.
