NVMFD5852NLT1G
  • Share:

onsemi NVMFD5852NLT1G

Manufacturer No:
NVMFD5852NLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 40V 15A SO8FL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMFD5852NLT1G is a dual N-channel power MOSFET produced by onsemi. This component is designed for high-performance applications requiring low on-resistance and high current handling. It features a compact package, making it suitable for space-constrained designs. The MOSFET is particularly useful in power management and motor control systems due to its robust specifications and reliability.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)40 V
RDS(ON) (On-Resistance)6.9 mΩ (typical at VGS = 10 V)
ID (Continuous Drain Current)44 A
ID (Pulse Drain Current)88 A
VGS (Gate-Source Voltage)±20 V
TJ (Junction Temperature)-55°C to 150°C
PackageD2PAK (TO-263)

Key Features

  • Low on-resistance (RDS(ON)) of 6.9 mΩ at VGS = 10 V, ensuring minimal power loss.
  • High continuous drain current (ID) of 44 A, suitable for high-power applications.
  • Dual N-channel configuration, providing flexibility in circuit design.
  • Compact D2PAK (TO-263) package, ideal for space-constrained designs.
  • Wide operating junction temperature range from -55°C to 150°C.

Applications

  • Motor control systems, including brushless DC motors and other high-current motor applications.
  • Power management systems, such as DC-DC converters and power supplies.
  • Automotive systems, including fuel pumps, oil pumps, and other high-reliability applications.
  • Industrial power systems, such as power tools and industrial automation.

Q & A

  1. What is the maximum drain-source voltage of the NVMFD5852NLT1G?
    The maximum drain-source voltage (VDS) is 40 V.
  2. What is the typical on-resistance of the NVMFD5852NLT1G?
    The typical on-resistance (RDS(ON)) is 6.9 mΩ at VGS = 10 V.
  3. What is the continuous drain current rating of the NVMFD5852NLT1G?
    The continuous drain current (ID) is 44 A.
  4. What is the package type of the NVMFD5852NLT1G?
    The package type is D2PAK (TO-263).
  5. What are the typical applications of the NVMFD5852NLT1G?
    Typical applications include motor control systems, power management systems, automotive systems, and industrial power systems.
  6. What is the junction temperature range of the NVMFD5852NLT1G?
    The junction temperature range is -55°C to 150°C.
  7. Can the NVMFD5852NLT1G be used in high-power motor control?
    Yes, it is suitable for high-power motor control due to its high current handling and low on-resistance.
  8. Is the NVMFD5852NLT1G suitable for automotive applications?
    Yes, it is suitable for automotive applications due to its high reliability and robust specifications.
  9. What is the gate-source voltage range of the NVMFD5852NLT1G?
    The gate-source voltage (VGS) range is ±20 V.
  10. How many MOSFETs are included in the NVMFD5852NLT1G package?
    The package includes two N-channel MOSFETs.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:15A
Rds On (Max) @ Id, Vgs:6.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1800pF @ 25V
Power - Max:3.2W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
0 Remaining View Similar

In Stock

-
548

Please send RFQ , we will respond immediately.

Same Series
NVMFD5852NLWFT1G
NVMFD5852NLWFT1G
MOSFET 2N-CH 40V 15A SO8FL

Similar Products

Part Number NVMFD5852NLT1G NVMFD5853NLT1G
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 40V 40V
Current - Continuous Drain (Id) @ 25°C 15A 12A
Rds On (Max) @ Id, Vgs 6.9mOhm @ 20A, 10V 10mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V 1100pF @ 25V
Power - Max 3.2W 3W
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-PowerTDFN 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual) 8-DFN (5x6) Dual Flag (SO8FL-Dual)

Related Product By Categories

FDMC8010A
FDMC8010A
Fairchild Semiconductor
1-ELEMENT, N-CHANNEL
2N7002DW-7-F
2N7002DW-7-F
Diodes Incorporated
MOSFET 2N-CH 60V 0.23A SOT-363
NX3020NAKV,115
NX3020NAKV,115
Nexperia USA Inc.
MOSFET 2N-CH 30V 200MA SOT666
FDC6305N
FDC6305N
onsemi
MOSFET 2N-CH 20V 2.7A SSOT6
STL8DN6LF3
STL8DN6LF3
STMicroelectronics
MOSFET 2N-CH 60V 20A 5X6
BUK7K52-60EX
BUK7K52-60EX
Nexperia USA Inc.
MOSFET 2N-CH 60V 15.4A LFPAK
STL7DN6LF3
STL7DN6LF3
STMicroelectronics
MOSFET 2N-CH 60V 20A 5X6
2N7002DW L6327
2N7002DW L6327
Infineon Technologies
MOSFET 2N-CH 60V 0.3A SOT363
PHKD13N03LT,118
PHKD13N03LT,118
Nexperia USA Inc.
MOSFET 2N-CH 30V 10.4A 8SOIC
EFC6604R-TR
EFC6604R-TR
onsemi
MOSFET 2N-CH 6EFCP
NX7002AKS/ZLX
NX7002AKS/ZLX
Nexperia USA Inc.
MOSFET 2 N-CH 60V 170MA SOT363
BSS84V-7-79
BSS84V-7-79
Diodes Incorporated
DIODE

Related Product By Brand

BAV70_D87Z
BAV70_D87Z
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
DTC114TM3T5G
DTC114TM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
NCP81101MNTXG
NCP81101MNTXG
onsemi
IC REG BUCK CTLR 1PH 28QFN