NVMFD5852NLT1G
  • Share:

onsemi NVMFD5852NLT1G

Manufacturer No:
NVMFD5852NLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 40V 15A SO8FL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMFD5852NLT1G is a dual N-channel power MOSFET produced by onsemi. This component is designed for high-performance applications requiring low on-resistance and high current handling. It features a compact package, making it suitable for space-constrained designs. The MOSFET is particularly useful in power management and motor control systems due to its robust specifications and reliability.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)40 V
RDS(ON) (On-Resistance)6.9 mΩ (typical at VGS = 10 V)
ID (Continuous Drain Current)44 A
ID (Pulse Drain Current)88 A
VGS (Gate-Source Voltage)±20 V
TJ (Junction Temperature)-55°C to 150°C
PackageD2PAK (TO-263)

Key Features

  • Low on-resistance (RDS(ON)) of 6.9 mΩ at VGS = 10 V, ensuring minimal power loss.
  • High continuous drain current (ID) of 44 A, suitable for high-power applications.
  • Dual N-channel configuration, providing flexibility in circuit design.
  • Compact D2PAK (TO-263) package, ideal for space-constrained designs.
  • Wide operating junction temperature range from -55°C to 150°C.

Applications

  • Motor control systems, including brushless DC motors and other high-current motor applications.
  • Power management systems, such as DC-DC converters and power supplies.
  • Automotive systems, including fuel pumps, oil pumps, and other high-reliability applications.
  • Industrial power systems, such as power tools and industrial automation.

Q & A

  1. What is the maximum drain-source voltage of the NVMFD5852NLT1G?
    The maximum drain-source voltage (VDS) is 40 V.
  2. What is the typical on-resistance of the NVMFD5852NLT1G?
    The typical on-resistance (RDS(ON)) is 6.9 mΩ at VGS = 10 V.
  3. What is the continuous drain current rating of the NVMFD5852NLT1G?
    The continuous drain current (ID) is 44 A.
  4. What is the package type of the NVMFD5852NLT1G?
    The package type is D2PAK (TO-263).
  5. What are the typical applications of the NVMFD5852NLT1G?
    Typical applications include motor control systems, power management systems, automotive systems, and industrial power systems.
  6. What is the junction temperature range of the NVMFD5852NLT1G?
    The junction temperature range is -55°C to 150°C.
  7. Can the NVMFD5852NLT1G be used in high-power motor control?
    Yes, it is suitable for high-power motor control due to its high current handling and low on-resistance.
  8. Is the NVMFD5852NLT1G suitable for automotive applications?
    Yes, it is suitable for automotive applications due to its high reliability and robust specifications.
  9. What is the gate-source voltage range of the NVMFD5852NLT1G?
    The gate-source voltage (VGS) range is ±20 V.
  10. How many MOSFETs are included in the NVMFD5852NLT1G package?
    The package includes two N-channel MOSFETs.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:15A
Rds On (Max) @ Id, Vgs:6.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1800pF @ 25V
Power - Max:3.2W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
0 Remaining View Similar

In Stock

-
548

Please send RFQ , we will respond immediately.

Same Series
NVMFD5852NLWFT1G
NVMFD5852NLWFT1G
MOSFET 2N-CH 40V 15A SO8FL

Similar Products

Part Number NVMFD5852NLT1G NVMFD5853NLT1G
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 40V 40V
Current - Continuous Drain (Id) @ 25°C 15A 12A
Rds On (Max) @ Id, Vgs 6.9mOhm @ 20A, 10V 10mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V 1100pF @ 25V
Power - Max 3.2W 3W
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-PowerTDFN 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual) 8-DFN (5x6) Dual Flag (SO8FL-Dual)

Related Product By Categories

FDPC8014S
FDPC8014S
onsemi
MOSFET 2N-CH 25V 8PWRCLIP
FDC6303N
FDC6303N
onsemi
MOSFET 2N-CH 25V 0.68A SSOT6
NTLUD3A50PZTAG
NTLUD3A50PZTAG
onsemi
MOSFET 2P-CH 20V 2.8A UDFN
BUK9K29-100E,115
BUK9K29-100E,115
Nexperia USA Inc.
MOSFET 2N-CH 100V 30A LFPAK56D
CSD88537NDT
CSD88537NDT
Texas Instruments
MOSFET 2N-CH 60V 15A 8SOIC
FDG6308P
FDG6308P
onsemi
MOSFET 2P-CH 20V 600MA SC88
FDG8850NZ
FDG8850NZ
onsemi
MOSFET 2N-CH 30V 750MA SC88
NX138BKSF
NX138BKSF
Nexperia USA Inc.
MOSFET 2 N-CH 60V 330MA SOT363
BSS84DWQ-13
BSS84DWQ-13
Diodes Incorporated
BSS FAMILY SOT363 T&R 10K
STS5DNF20V
STS5DNF20V
STMicroelectronics
MOSFET 2N-CH 20V 5A 8-SOIC
FDG6303N-F169
FDG6303N-F169
onsemi
MOSFET 2N-CH 25V 0.5A SC70-6
2N7002DW-13-G
2N7002DW-13-G
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363

Related Product By Brand

SBRS81100T3G
SBRS81100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMB
SZMMBZ5226BLT1G
SZMMBZ5226BLT1G
onsemi
DIODE ZENER 3.3V 225MW SOT23-3
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
NB3N551MNR4G
NB3N551MNR4G
onsemi
IC CLK BUFFER 1:4 180MHZ 8DFN
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
MC33364D1
MC33364D1
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
AMIS30521C5212G
AMIS30521C5212G
onsemi
IC MTRDRV BIPLR 4.75-5.25V 32QFP
NCP1593AMNTWG
NCP1593AMNTWG
onsemi
IC REG BUCK ADJUSTABLE 3A 10DFN
NCP584HSN33T1G
NCP584HSN33T1G
onsemi
IC REG LINEAR 3.3V 200MA SOT23-5