2N5551TAR
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onsemi 2N5551TAR

Manufacturer No:
2N5551TAR
Manufacturer:
onsemi
Package:
Tape & Box (TB)
Description:
TRANS NPN 160V 0.6A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N5551TAR, produced by onsemi, is an NPN bipolar junction transistor designed primarily for high-voltage, low-current applications. It is widely used in electronic circuits for its ability to handle relatively high voltages and moderate current levels. The transistor is suitable for various switching and amplification purposes due to its high collector-emitter voltage rating and decent switching characteristics.

Key Specifications

ParameterValue
Transistor TypeNPN
Collector-Emitter Voltage (Vceo)160V
Collector-Base Voltage (Vcbo)180V
Emitter-Base Voltage (Vebo)6V
Collector Current (Ic)600mA
Power Dissipation (Pd)625mW
DC Current Gain (hfe)80-250
Transition Frequency (ft)100MHz
Operating Junction Temperature (Tj)-55°C to 150°C
PackageTO-92
Saturation Voltage (Vce(sat))0.3V (max) @ 10mA
Base Current (Ib)200mA (max)

Key Features

  • Pb−Free Packages are available, making it environmentally friendly.
  • High collector-emitter voltage rating of up to 160V, suitable for high-voltage applications.
  • Maximum collector current of 600mA, supporting moderate current levels.
  • DC current gain (hfe) range of 80 to 250, ensuring reliable amplification.
  • Transition frequency of 100 MHz, facilitating efficient switching and amplification.
  • Operating junction temperature range of -55°C to 150°C, allowing for use in a wide range of environments.
  • General purpose switching and amplification capabilities.

Applications

  • Low power amplifiers: Ideal for amplifying low-level signals such as audio or other small signals.
  • Current amplifiers: Used to amplify current in various electronic circuits.
  • Small signal boosters: Effective in boosting small signals to higher levels.
  • Audio or other signal amplifiers: Suitable for amplifying audio or other types of signals.
  • Darlington pair: Can be used in Darlington configurations for higher current gain.

Q & A

  1. What is the 2N5551TAR transistor used for? The 2N5551TAR is used for high-voltage, low-current applications, including switching and amplification in electronic circuits.
  2. What is the collector-emitter voltage rating of the 2N5551TAR? The collector-emitter voltage rating is up to 160V.
  3. What is the maximum collector current of the 2N5551TAR? The maximum collector current is 600mA.
  4. What is the DC current gain (hfe) range of the 2N5551TAR? The DC current gain (hfe) range is 80 to 250.
  5. What is the transition frequency of the 2N5551TAR? The transition frequency is 100 MHz.
  6. What is the operating junction temperature range of the 2N5551TAR? The operating junction temperature range is -55°C to 150°C.
  7. What package type does the 2N5551TAR come in? The 2N5551TAR comes in a TO-92 package.
  8. What are some common applications of the 2N5551TAR? Common applications include low power amplifiers, current amplifiers, small signal boosters, audio or other signal amplifiers, and Darlington pairs.
  9. How does the 2N5551TAR amplify signals? The 2N5551TAR amplifies signals by allowing a small current at the base to control a much larger current from the collector to the emitter.
  10. Is the 2N5551TAR Pb−Free? Yes, Pb−Free packages are available for the 2N5551TAR.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):160 V
Vce Saturation (Max) @ Ib, Ic:200mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Power - Max:625 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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Similar Products

Part Number 2N5551TAR 2N5551TFR 2N5550TAR 2N5551TA
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Active Active Active
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 160 V 160 V 140 V 160 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA 200mV @ 5mA, 50mA 250mV @ 5mA, 50mA 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO) 50nA (ICBO) 100nA (ICBO) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V 80 @ 10mA, 5V 60 @ 10mA, 5V 80 @ 10mA, 5V
Power - Max 625 mW 625 mW 625 mW 625 mW
Frequency - Transition 100MHz 100MHz 300MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3

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