2N5551TAR
  • Share:

onsemi 2N5551TAR

Manufacturer No:
2N5551TAR
Manufacturer:
onsemi
Package:
Tape & Box (TB)
Description:
TRANS NPN 160V 0.6A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N5551TAR, produced by onsemi, is an NPN bipolar junction transistor designed primarily for high-voltage, low-current applications. It is widely used in electronic circuits for its ability to handle relatively high voltages and moderate current levels. The transistor is suitable for various switching and amplification purposes due to its high collector-emitter voltage rating and decent switching characteristics.

Key Specifications

ParameterValue
Transistor TypeNPN
Collector-Emitter Voltage (Vceo)160V
Collector-Base Voltage (Vcbo)180V
Emitter-Base Voltage (Vebo)6V
Collector Current (Ic)600mA
Power Dissipation (Pd)625mW
DC Current Gain (hfe)80-250
Transition Frequency (ft)100MHz
Operating Junction Temperature (Tj)-55°C to 150°C
PackageTO-92
Saturation Voltage (Vce(sat))0.3V (max) @ 10mA
Base Current (Ib)200mA (max)

Key Features

  • Pb−Free Packages are available, making it environmentally friendly.
  • High collector-emitter voltage rating of up to 160V, suitable for high-voltage applications.
  • Maximum collector current of 600mA, supporting moderate current levels.
  • DC current gain (hfe) range of 80 to 250, ensuring reliable amplification.
  • Transition frequency of 100 MHz, facilitating efficient switching and amplification.
  • Operating junction temperature range of -55°C to 150°C, allowing for use in a wide range of environments.
  • General purpose switching and amplification capabilities.

Applications

  • Low power amplifiers: Ideal for amplifying low-level signals such as audio or other small signals.
  • Current amplifiers: Used to amplify current in various electronic circuits.
  • Small signal boosters: Effective in boosting small signals to higher levels.
  • Audio or other signal amplifiers: Suitable for amplifying audio or other types of signals.
  • Darlington pair: Can be used in Darlington configurations for higher current gain.

Q & A

  1. What is the 2N5551TAR transistor used for? The 2N5551TAR is used for high-voltage, low-current applications, including switching and amplification in electronic circuits.
  2. What is the collector-emitter voltage rating of the 2N5551TAR? The collector-emitter voltage rating is up to 160V.
  3. What is the maximum collector current of the 2N5551TAR? The maximum collector current is 600mA.
  4. What is the DC current gain (hfe) range of the 2N5551TAR? The DC current gain (hfe) range is 80 to 250.
  5. What is the transition frequency of the 2N5551TAR? The transition frequency is 100 MHz.
  6. What is the operating junction temperature range of the 2N5551TAR? The operating junction temperature range is -55°C to 150°C.
  7. What package type does the 2N5551TAR come in? The 2N5551TAR comes in a TO-92 package.
  8. What are some common applications of the 2N5551TAR? Common applications include low power amplifiers, current amplifiers, small signal boosters, audio or other signal amplifiers, and Darlington pairs.
  9. How does the 2N5551TAR amplify signals? The 2N5551TAR amplifies signals by allowing a small current at the base to control a much larger current from the collector to the emitter.
  10. Is the 2N5551TAR Pb−Free? Yes, Pb−Free packages are available for the 2N5551TAR.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):160 V
Vce Saturation (Max) @ Ib, Ic:200mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Power - Max:625 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
0 Remaining View Similar

In Stock

-
56

Please send RFQ , we will respond immediately.

Same Series
MMBT5551
MMBT5551
TRANS NPN 160V 0.6A SOT23-3
MMBT5551_NL
MMBT5551_NL
TRANS NPN 160V 0.6A SOT23-3
2N5551CYTA
2N5551CYTA
TRANS NPN 160V 0.6A TO92-3
2N5551CBU
2N5551CBU
TRANS NPN 160V 0.6A TO92-3
2N5551CTA
2N5551CTA
TRANS NPN 160V 0.6A TO92-3
2N5551_J05Z
2N5551_J05Z
TRANS NPN 160V 0.6A TO92-3
2N5551_J18Z
2N5551_J18Z
TRANS NPN 160V 0.6A TO92-3
2N5551_J61Z
2N5551_J61Z
TRANS NPN 160V 0.6A TO92-3

Similar Products

Part Number 2N5551TAR 2N5551TFR 2N5550TAR 2N5551TA
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Active Active Active
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 160 V 160 V 140 V 160 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA 200mV @ 5mA, 50mA 250mV @ 5mA, 50mA 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO) 50nA (ICBO) 100nA (ICBO) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V 80 @ 10mA, 5V 60 @ 10mA, 5V 80 @ 10mA, 5V
Power - Max 625 mW 625 mW 625 mW 625 mW
Frequency - Transition 100MHz 100MHz 300MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3

Related Product By Categories

BC856BW_R1_00001
BC856BW_R1_00001
Panjit International Inc.
TRANS PNP 65V 0.1A SOT323
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
BDW93CTU
BDW93CTU
onsemi
TRANS NPN DARL 100V 12A TO220-3
BCP56-16HX
BCP56-16HX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
MJD44H11J
MJD44H11J
Nexperia USA Inc.
TRANS NPN 80V 8A DPAK
2SC3648T-TD-E
2SC3648T-TD-E
onsemi
TRANS NPN 160V 0.7A PCP
BDX53C
BDX53C
STMicroelectronics
TRANS NPN DARL 100V 8A TO220
MCH6203-TL-E
MCH6203-TL-E
onsemi
TRANS NPN 50V 1A 6MCPH
BC858B-7-F
BC858B-7-F
Diodes Incorporated
TRANS PNP 30V 0.1A SOT23-3
BC857CW-G
BC857CW-G
Comchip Technology
TRANS PNP 45V 0.1A SOT323
2N2907AE4
2N2907AE4
Microchip Technology
TRANS PNP 60V 0.6A TO18
TIP30C-S
TIP30C-S
Bourns Inc.
TRANS PNP 100V 1A TO220

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
MBRAF440T3G
MBRAF440T3G
onsemi
DIODE SCHOTTKY 40V 4A SMA-FL
SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
MC78M05BDTT5G
MC78M05BDTT5G
onsemi
IC REG LINEAR 5V 500MA DPAK
NCV4269AD150R2G
NCV4269AD150R2G
onsemi
IC REG LINEAR 5V 150MA 8SOIC
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4