2N5551TFR
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onsemi 2N5551TFR

Manufacturer No:
2N5551TFR
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 160V 0.6A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N5551TFR is an NPN general-purpose amplifier transistor produced by onsemi. This device is designed for high-voltage amplification and is suitable for applications such as gas discharge display drivers. It is available in the TO-92 package and is Pb-free, halogen-free, and RoHS compliant.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 160 V
Collector-Base Voltage VCBO 180 V
Emitter-Base Voltage VEBO 6 V
Continuous Collector Current IC 600 mA
Operating and Storage Temperature TJ, TSTG -55 to +150 °C
Total Device Dissipation PD 625 mW
Thermal Resistance, Junction to Case RJC 83.3 °C/W
Thermal Resistance, Junction to Ambient RJA 200 °C/W
DC Current Gain (hFE) at IC = 10 mA, VCE = 5 V hFE 80 -
Transition Frequency fT 100 MHz

Key Features

  • Pb-free, halogen-free, and RoHS compliant
  • High DC current gain (hFE) of 80 at IC = 10 mA, VCE = 5 V
  • Continuous collector current of 600 mA
  • Collector-emitter voltage of 160 V and collector-base voltage of 180 V
  • Transition frequency of 100 MHz, suitable for amplifying low-level signals
  • Available in TO-92 package

Applications

The 2N5551TFR is commonly used in various applications such as:

  • General-purpose high-voltage amplifiers
  • Gas discharge display drivers
  • Amplification of audio or other low-power signals
  • Switching circuits due to its decent switching characteristics

Q & A

  1. What is the collector-emitter voltage (VCEO) of the 2N5551TFR?

    The collector-emitter voltage (VCEO) is 160 V.

  2. What is the continuous collector current (IC) of the 2N5551TFR?

    The continuous collector current (IC) is 600 mA.

  3. What is the transition frequency (fT) of the 2N5551TFR?

    The transition frequency (fT) is 100 MHz.

  4. Is the 2N5551TFR RoHS compliant?
  5. What is the typical DC current gain (hFE) of the 2N5551TFR at IC = 10 mA, VCE = 5 V?

    The typical DC current gain (hFE) is 80.

  6. What are the common applications of the 2N5551TFR?

    The 2N5551TFR is commonly used in general-purpose high-voltage amplifiers, gas discharge display drivers, and amplification of audio or other low-power signals.

  7. What package type is the 2N5551TFR available in?

    The 2N5551TFR is available in the TO-92 package.

  8. What is the thermal resistance, junction to ambient (RJA), of the 2N5551TFR?

    The thermal resistance, junction to ambient (RJA), is 200 °C/W.

  9. What is the total device dissipation (PD) of the 2N5551TFR?

    The total device dissipation (PD) is 625 mW.

  10. What are the operating and storage temperature ranges for the 2N5551TFR?

    The operating and storage temperature ranges are -55 to +150 °C.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):160 V
Vce Saturation (Max) @ Ib, Ic:200mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Power - Max:625 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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In Stock

$0.38
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Same Series
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Similar Products

Part Number 2N5551TFR 2N5550TFR 2N5551TAR 2N5551TF
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 160 V 140 V 160 V 160 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA 250mV @ 5mA, 50mA 200mV @ 5mA, 50mA 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO) 100nA (ICBO) 50nA (ICBO) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V 60 @ 10mA, 5V 80 @ 10mA, 5V 80 @ 10mA, 5V
Power - Max 625 mW 625 mW 625 mW 625 mW
Frequency - Transition 100MHz 300MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3

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