Overview
The 2N5551TFR is an NPN general-purpose amplifier transistor produced by onsemi. This device is designed for high-voltage amplification and is suitable for applications such as gas discharge display drivers. It is available in the TO-92 package and is Pb-free, halogen-free, and RoHS compliant.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCEO | 160 | V |
Collector-Base Voltage | VCBO | 180 | V |
Emitter-Base Voltage | VEBO | 6 | V |
Continuous Collector Current | IC | 600 | mA |
Operating and Storage Temperature | TJ, TSTG | -55 to +150 | °C |
Total Device Dissipation | PD | 625 | mW |
Thermal Resistance, Junction to Case | RJC | 83.3 | °C/W |
Thermal Resistance, Junction to Ambient | RJA | 200 | °C/W |
DC Current Gain (hFE) at IC = 10 mA, VCE = 5 V | hFE | 80 | - |
Transition Frequency | fT | 100 | MHz |
Key Features
- Pb-free, halogen-free, and RoHS compliant
- High DC current gain (hFE) of 80 at IC = 10 mA, VCE = 5 V
- Continuous collector current of 600 mA
- Collector-emitter voltage of 160 V and collector-base voltage of 180 V
- Transition frequency of 100 MHz, suitable for amplifying low-level signals
- Available in TO-92 package
Applications
The 2N5551TFR is commonly used in various applications such as:
- General-purpose high-voltage amplifiers
- Gas discharge display drivers
- Amplification of audio or other low-power signals
- Switching circuits due to its decent switching characteristics
Q & A
- What is the collector-emitter voltage (VCEO) of the 2N5551TFR?
The collector-emitter voltage (VCEO) is 160 V.
- What is the continuous collector current (IC) of the 2N5551TFR?
The continuous collector current (IC) is 600 mA.
- What is the transition frequency (fT) of the 2N5551TFR?
The transition frequency (fT) is 100 MHz.
- Is the 2N5551TFR RoHS compliant?
- What is the typical DC current gain (hFE) of the 2N5551TFR at IC = 10 mA, VCE = 5 V?
The typical DC current gain (hFE) is 80.
- What are the common applications of the 2N5551TFR?
The 2N5551TFR is commonly used in general-purpose high-voltage amplifiers, gas discharge display drivers, and amplification of audio or other low-power signals.
- What package type is the 2N5551TFR available in?
The 2N5551TFR is available in the TO-92 package.
- What is the thermal resistance, junction to ambient (RJA), of the 2N5551TFR?
The thermal resistance, junction to ambient (RJA), is 200 °C/W.
- What is the total device dissipation (PD) of the 2N5551TFR?
The total device dissipation (PD) is 625 mW.
- What are the operating and storage temperature ranges for the 2N5551TFR?
The operating and storage temperature ranges are -55 to +150 °C.