Overview
The 2N5550TFR is an NPN epitaxial silicon transistor produced by onsemi. This transistor is designed for general-purpose amplifier applications and is housed in the TO-92-3 package. It is known for its reliability and versatility in various electronic circuits.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (VCBO) | 160 | V |
| Collector-Emitter Voltage (VCEO) | 140 | V |
| Emitter-Base Voltage (VEBO) | 6 | V |
| Collector Current (IC) | 600 | mA |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature (TSTG) | -55 to 150 | °C |
| Total Device Dissipation (PD) | 625 | mW |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 200 | °C/W |
| DC Current Gain (hFE) | 60 - 250 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.15 - 0.25 | V |
| Base-Emitter Saturation Voltage (VBE(sat)) | 1.0 - 1.2 | V |
| Current Gain Bandwidth Product (fT) | 100 - 300 | MHz |
Key Features
- General-Purpose Amplifier: Suitable for a wide range of amplifier applications.
- High Voltage Capability: Collector-Emitter voltage of up to 140V and Collector-Base voltage of up to 160V.
- High Current Handling: Collector current up to 600 mA.
- Low Power Dissipation: Total device dissipation of 625 mW.
- Wide Temperature Range: Junction temperature up to 150°C and storage temperature from -55°C to 150°C.
- Compact Packaging: Housed in the TO-92-3 package, suitable for various mounting methods including bulk, ammo, and tape and reel.
Applications
- General-Purpose Amplification: Used in audio amplifiers, signal amplifiers, and other general-purpose amplifier circuits.
- Switching Circuits: Suitable for switching applications due to its high current gain and low saturation voltage.
- Power Supplies: Can be used in power supply circuits requiring high voltage and current handling.
- Automotive Electronics: Applicable in automotive systems where high reliability and durability are required.
Q & A
- What is the maximum collector-emitter voltage of the 2N5550TFR transistor?
The maximum collector-emitter voltage (VCEO) is 140 V.
- What is the maximum collector current of the 2N5550TFR transistor?
The maximum collector current (IC) is 600 mA.
- What is the junction temperature range of the 2N5550TFR transistor?
The junction temperature (TJ) range is up to 150°C.
- What is the total device dissipation of the 2N5550TFR transistor?
The total device dissipation (PD) is 625 mW.
- What is the typical DC current gain (hFE) of the 2N5550TFR transistor?
The typical DC current gain (hFE) ranges from 60 to 250.
- What is the collector-emitter saturation voltage (VCE(sat)) of the 2N5550TFR transistor?
The collector-emitter saturation voltage (VCE(sat)) ranges from 0.15 to 0.25 V.
- What is the base-emitter saturation voltage (VBE(sat)) of the 2N5550TFR transistor?
The base-emitter saturation voltage (VBE(sat)) ranges from 1.0 to 1.2 V.
- What is the current gain bandwidth product (fT) of the 2N5550TFR transistor?
The current gain bandwidth product (fT) ranges from 100 to 300 MHz.
- In what package is the 2N5550TFR transistor housed?
The 2N5550TFR transistor is housed in the TO-92-3 package.
- What are some common applications of the 2N5550TFR transistor?
Common applications include general-purpose amplification, switching circuits, power supplies, and automotive electronics.
