Overview
The 2N5551TA is an NPN general-purpose amplifier transistor manufactured by onsemi. This device is designed for high-voltage applications and is particularly suited for use in general-purpose amplifiers and gas discharge display drivers. It is lead-free, halogen-free, and RoHS compliant, making it environmentally friendly and compliant with current regulatory standards.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 160 | V |
| Collector-Base Voltage (VCBO) | 180 | V |
| Emitter-Base Voltage (VEBO) | 6 | V |
| Continuous Collector Current (IC) | 600 | mA |
| Operating and Storage Temperature (TJ, TSTG) | -55 to +150 | °C |
| Total Device Dissipation (PD) | 625 | mW |
| Thermal Resistance, Junction to Case (RJC) | 83.3 | °C/W |
| Thermal Resistance, Junction to Ambient (RJA) | 200 | °C/W |
| DC Current Gain (hFE) at IC = 10 mA, VCE = 5.0 V | 80 - 250 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 10 mA, IB = 1.0 mA | 0.15 | V |
| Base-Emitter On Voltage (VBE(sat)) at IC = 10 mA, IB = 1.0 mA | 1.0 | V |
| 100 | MHz |
Key Features
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental compliance.
- High collector-emitter voltage (VCEO) of 160 V, making it suitable for high-voltage applications.
- Continuous collector current of 600 mA.
- Wide operating temperature range from -55°C to +150°C.
- High DC current gain (hFE) ranging from 80 to 250.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter on voltage (VBE(sat)).
- Nominal transition frequency (fT) of 100 MHz.
Applications
- General-purpose amplifiers.
- Gas discharge display drivers.
- High-voltage switching and amplification circuits.
- Industrial control systems.
- Automotive and consumer electronics where high reliability and performance are required.
Q & A
- What is the collector-emitter voltage (VCEO) of the 2N5551TA transistor?
The collector-emitter voltage (VCEO) of the 2N5551TA transistor is 160 V.
- What is the continuous collector current (IC) rating of the 2N5551TA?
The continuous collector current (IC) rating of the 2N5551TA is 600 mA.
- What is the operating temperature range for the 2N5551TA transistor?
The operating temperature range for the 2N5551TA transistor is from -55°C to +150°C.
- Is the 2N5551TA transistor RoHS compliant?
- What is the nominal transition frequency (fT) of the 2N5551TA transistor?
The nominal transition frequency (fT) of the 2N5551TA transistor is 100 MHz.
- What are some common applications for the 2N5551TA transistor?
The 2N5551TA transistor is commonly used in general-purpose amplifiers, gas discharge display drivers, high-voltage switching and amplification circuits, and various industrial and automotive applications.
- What is the thermal resistance, junction to case (RJC), for the 2N5551TA transistor?
The thermal resistance, junction to case (RJC), for the 2N5551TA transistor is 83.3 °C/W.
- What is the DC current gain (hFE) range for the 2N5551TA transistor?
The DC current gain (hFE) range for the 2N5551TA transistor is from 80 to 250.
- What is the collector-emitter saturation voltage (VCE(sat)) for the 2N5551TA transistor?
The collector-emitter saturation voltage (VCE(sat)) for the 2N5551TA transistor is 0.15 V at IC = 10 mA and IB = 1.0 mA.
- What package types are available for the 2N5551TA transistor?
The 2N5551TA transistor is available in TO-92-3 packages, including bulk, ammo pack, and tape & reel configurations.
