Overview
The PSMN2R4-30MLD is a logic level gate drive N-channel enhancement mode MOSFET produced by Nexperia, a company that was previously part of NXP Semiconductors. This MOSFET is part of the NextPowerS3 portfolio, which utilizes Nexperia's unique 'SchottkyPlus' technology. This technology offers high efficiency and low spiking performance, similar to MOSFETs with an integrated Schottky or Schottky-like body diode, but without the high leakage current issues.
The device is packaged in the LFPAK33 (SOT1210) package, known for its high reliability and thermal performance. It is optimized for 4.5 V gate drive and features low parasitic inductance and resistance, making it suitable for high efficiency applications at high switching frequencies.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain-Source Voltage) | 25 °C ≤ Tj ≤ 175 °C | - | - | 30 | V |
| VGS (Gate-Source Voltage) | - | -20 | - | 20 | V |
| RDSon (Drain-Source On-State Resistance) @ VGS = 10 V | ID = 25 A; Tj = 25 °C | - | 2 | 2.4 | mΩ |
| RDSon (Drain-Source On-State Resistance) @ VGS = 4.5 V | ID = 25 A; Tj = 25 °C | - | 2.6 | 3.2 | mΩ |
| ID (Continuous Drain Current) | Tj = 25 °C | - | - | 70 | A |
| Tj (Junction Temperature) | - | -55 | - | 175 | °C |
| VGS(th) (Gate-Source Threshold Voltage) | ID = 1 mA; VDS = VGS; Tj = 25 °C | 1.2 | 1.7 | 2.2 | V |
| QGD (Gate-Drain Charge) | VGS = 4.5 V; ID = 25 A; VDS = 15 V | - | 5.6 | - | nC |
Key Features
- Logic level gate drive N-channel enhancement mode MOSFET.
- NextPowerS3 technology with 'SchottkyPlus' for high efficiency and low spiking performance.
- Ultra-low QG, QGD, and QOSS for high system efficiency, especially at higher switching frequencies.
- Superfast switching with soft-recovery; s-factor > 1.
- Low spiking and ringing for low EMI designs.
- Schottky-like performance with < 1 µA leakage at 25 °C.
- Optimized for 4.5 V gate drive.
- Low parasitic inductance and resistance.
- High reliability clip bonded and solder die attach in LFPAK33 package.
Applications
The PSMN2R4-30MLD MOSFET is suitable for a wide range of applications, including:
- Automotive systems: For high efficiency and reliability in automotive electronics.
- Industrial applications: Such as power supplies, motor control, and high-frequency switching.
- Power management: In computing, consumer electronics, and mobile devices.
- Wearable technology: Where high efficiency and low power consumption are critical.
Q & A
- What is the maximum drain-source voltage (VDS) of the PSMN2R4-30MLD MOSFET?
The maximum drain-source voltage (VDS) is 30 V.
- What is the typical on-state resistance (RDSon) at VGS = 10 V?
The typical on-state resistance (RDSon) at VGS = 10 V is 2 mΩ.
- What is the continuous drain current (ID) rating of this MOSFET?
The continuous drain current (ID) rating is 70 A.
- What is the junction temperature (Tj) range for this device?
The junction temperature (Tj) range is from -55 °C to 175 °C.
- What technology does the PSMN2R4-30MLD use for high efficiency?
The PSMN2R4-30MLD uses Nexperia's NextPowerS3 technology with 'SchottkyPlus' for high efficiency.
- What is the typical gate-source threshold voltage (VGS(th))?
The typical gate-source threshold voltage (VGS(th)) is 1.7 V.
- What are the key benefits of the 'SchottkyPlus' technology?
The 'SchottkyPlus' technology offers Schottky-like performance with low leakage current and high efficiency.
- What is the package type of the PSMN2R4-30MLD MOSFET?
The package type is LFPAK33 (SOT1210).
- Is the PSMN2R4-30MLD suitable for high-frequency switching applications?
Yes, it is optimized for high efficiency at high switching frequencies.
- What are some common applications for this MOSFET?
Common applications include automotive systems, industrial applications, power management, and wearable technology.
