PMV16XN215
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NXP USA Inc. PMV16XN215

Manufacturer No:
PMV16XN215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL N-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV16UN215, produced by NXP USA Inc., is a 20 V, 5.8 A N-channel Trench MOSFET. This component is designed in an enhancement mode Field-Effect Transistor (FET) configuration and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The PMV16UN215 is notable for its low threshold voltage and very fast switching capabilities, making it suitable for a variety of high-performance applications.

Key Specifications

ParameterValue
Type numberPMV16UN
PackageSOT23 (TO-236AB)
Channel typeN-channel
VDS [max] (V)20
VGS [max] (V)±8
RDSon [max] @ VGS = 4.5 V; @25°C (mΩ)18
RDSon [max] @ VGS = 2.5 V (mΩ)23
Tj [max] (°C)150
ID [max] (A)5.8
QGD [typ] (nC)1.9
QG(tot) [typ] @ VGS = 4.5 V (nC)7.4
Ptot [max] (W)0.51
VGSth [typ] (V)0.7

Key Features

  • Low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • Compact SOT23 (TO-236AB) package

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMV16UN215?
    The maximum drain-source voltage (VDS) is 20 V.
  2. What is the maximum gate-source voltage (VGS) of the PMV16UN215?
    The maximum gate-source voltage (VGS) is ±8 V.
  3. What is the typical on-resistance (RDSon) at VGS = 4.5 V and 25°C?
    The typical on-resistance (RDSon) at VGS = 4.5 V and 25°C is 18 mΩ.
  4. What is the maximum junction temperature (Tj) of the PMV16UN215?
    The maximum junction temperature (Tj) is 150°C.
  5. What is the maximum drain current (ID) of the PMV16UN215?
    The maximum drain current (ID) is 5.8 A.
  6. What are the typical gate-drain charge (QGD) and total gate charge (QG(tot))?
    The typical gate-drain charge (QGD) is 1.9 nC, and the total gate charge (QG(tot)) at VGS = 4.5 V is 7.4 nC.
  7. What is the maximum total power dissipation (Ptot) of the PMV16UN215?
    The maximum total power dissipation (Ptot) is 0.51 W.
  8. What is the typical threshold voltage (VGSth) of the PMV16UN215?
    The typical threshold voltage (VGSth) is 0.7 V.
  9. In what package is the PMV16UN215 available?
    The PMV16UN215 is available in the SOT23 (TO-236AB) package.
  10. What are some common applications of the PMV16UN215?
    Common applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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