NXP USA Inc. PMV16XN215

The PMV16UN215, produced by NXP USA Inc., is a 20 V, 5.8 A N-channel Trench MOSFET. This component is designed in an enhancement mode Field-Effect Transistor (FET) configuration and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The PMV16UN215 is notable for its low threshold voltage and very fast switching capabilities, making it suitable for a variety of high-performance applications.

• Low threshold voltage
• Very fast switching
• Trench MOSFET technology
• Compact SOT23 (TO-236AB) package

• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits

1. What is the maximum drain-source voltage (V_DS) of the PMV16UN215?
   The maximum drain-source voltage (V_DS) is 20 V.
2. What is the maximum gate-source voltage (V_GS) of the PMV16UN215?
   The maximum gate-source voltage (V_GS) is ±8 V.
3. What is the typical on-resistance (R_DSon) at V_GS = 4.5 V and 25°C?
   The typical on-resistance (R_DSon) at V_GS = 4.5 V and 25°C is 18 mΩ.
4. What is the maximum junction temperature (T_j) of the PMV16UN215?
   The maximum junction temperature (T_j) is 150°C.
5. What is the maximum drain current (I_D) of the PMV16UN215?
   The maximum drain current (I_D) is 5.8 A.
6. What are the typical gate-drain charge (Q_GD) and total gate charge (Q_G(tot))?
   The typical gate-drain charge (Q_GD) is 1.9 nC, and the total gate charge (Q_G(tot)) at V_GS = 4.5 V is 7.4 nC.
7. What is the maximum total power dissipation (P_tot) of the PMV16UN215?
   The maximum total power dissipation (P_tot) is 0.51 W.
8. What is the typical threshold voltage (V_GSth) of the PMV16UN215?
   The typical threshold voltage (V_GSth) is 0.7 V.
9. In what package is the PMV16UN215 available?
   The PMV16UN215 is available in the SOT23 (TO-236AB) package.
10. What are some common applications of the PMV16UN215?
    Common applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.