PMK35EP,518
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NXP USA Inc. PMK35EP,518

Manufacturer No:
PMK35EP,518
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
TRANSISTOR >30MHZ
Delivery:
Payment:
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Product Introduction

Overview

The PMK35EP,518 is a P-Channel MOSFET produced by NXP USA Inc., now known as Nexperia. This component is part of the PMK series and is designed for high-performance applications. Although the product is currently obsolete and no longer manufactured, it remains relevant for understanding and replacing similar components in existing designs.

Key Specifications

Parameter Conditions Min. Typ. Max. Unit
VDS (Drain-Source Voltage) - - - 30 V
ID (Drain Current) Tc = 25°C - - 14.9 A
PTOT (Total Power Dissipation) Tc = 25°C - - 6.9 W
Package - - - 8-SO -

Key Features

  • P-Channel MOSFET: Suitable for applications requiring a P-Channel switch.
  • High Drain Current: Capable of handling up to 14.9 A at Tc = 25°C.
  • Low On-State Resistance: Efficient switching with minimal power loss.
  • Surface Mount Package: 8-SO package for easy integration into surface mount designs.

Applications

  • Power Switching: Ideal for power switching applications in automotive, industrial, and consumer electronics.
  • DC-DC Converters: Used in DC-DC converter circuits for efficient power conversion.
  • Motor Control: Suitable for motor control and drive applications.
  • General Purpose Switching: Can be used in various general-purpose switching applications.

Q & A

  1. What is the maximum drain-source voltage of the PMK35EP,518?

    The maximum drain-source voltage (VDS) is 30 V.

  2. What is the maximum drain current of the PMK35EP,518?

    The maximum drain current (ID) is 14.9 A at Tc = 25°C.

  3. What is the total power dissipation of the PMK35EP,518?

    The total power dissipation (PTOT) is 6.9 W at Tc = 25°C.

  4. What package type does the PMK35EP,518 come in?

    The PMK35EP,518 comes in an 8-SO surface mount package.

  5. Is the PMK35EP,518 still in production?

    No, the PMK35EP,518 is obsolete and no longer manufactured.

  6. What are some common applications for the PMK35EP,518?

    Common applications include power switching, DC-DC converters, motor control, and general-purpose switching.

  7. What is the significance of the '518' suffix in the part number?

    The '518' suffix typically indicates the packaging and ordering information, but specific details can be found in Nexperia's part numbering documentation.

  8. How do I find a substitute for the PMK35EP,518?

    You can find substitutes by checking the manufacturer's website or distributor websites like Digi-Key, which often list recommended replacements for obsolete parts.

  9. What are the key features of the PMK35EP,518?

    Key features include high drain current, low on-state resistance, and a surface mount package.

  10. Where can I find detailed specifications for the PMK35EP,518?

    Detailed specifications can be found in the datasheet available from sources like WIN SOURCE or the manufacturer's official website.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:14.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:19mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):6.9W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number PMK35EP,518 PMK30EP,518
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 14.9A (Tc) 14.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 9.2A, 10V 19mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V 50 nC @ 10 V
Vgs (Max) ±25V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 25 V 2240 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 6.9W (Tc) 6.9W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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