BUK9832-55A,115
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NXP USA Inc. BUK9832-55A,115

Manufacturer No:
BUK9832-55A,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 55V 12A SOT223
Delivery:
Payment:
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Product Introduction

Overview

The BUK9832-55A,115 is a logic level N-channel enhancement mode Field-Effect Transistor (FET) produced by NXP USA Inc. This device utilizes TrenchMOS technology and is packaged in a plastic SOT223 (SC-73) package. It is designed and qualified to the appropriate AEC standard for use in automotive critical applications, as well as general-purpose power switching. The BUK9832-55A,115 is known for its low conduction losses due to its low on-state resistance, making it suitable for a variety of power management tasks.

Key Specifications

ParameterConditionsMinTypMaxUnit
VDS (Drain-Source Voltage)55V
RDSon @ VGS = 10 V29
RDSon @ VGS = 5 V32
RDSon @ VGS = 4.5 V; @25°C36
Tj (Junction Temperature)150°C
ID (Drain Current)12A
Ptot (Total Power Dissipation)8W
Qr (Reverse Recovery Charge)80nC
VGSth (Gate-Source Threshold Voltage)1.5V

Key Features

  • Low conduction losses due to low on-state resistance.
  • Suitable for logic level gate drive sources.
  • Compliant with Q101 standards.
  • Automotive qualified, adhering to AEC standards.
  • Applicable for 12 V and 24 V loads.
  • Ideal for automotive and general-purpose power switching applications, including motors, lamps, and solenoids.

Applications

The BUK9832-55A,115 is versatile and can be used in various applications, including:

  • Automotive systems: Suitable for critical automotive applications due to its AEC qualification.
  • Power switching: Ideal for general-purpose power switching tasks.
  • Motors and lamps: Used in the control of motors, lamps, and solenoids.
  • Industrial and consumer electronics: Applicable in a wide range of industrial and consumer electronic devices requiring efficient power management.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BUK9832-55A,115?
    The maximum drain-source voltage (VDS) is 55 V.
  2. What is the typical on-state resistance (RDSon) at VGS = 10 V?
    The typical on-state resistance (RDSon) at VGS = 10 V is 29 mΩ.
  3. What is the maximum junction temperature (Tj)?
    The maximum junction temperature (Tj) is 150°C.
  4. What is the maximum drain current (ID)?
    The maximum drain current (ID) is 12 A.
  5. Is the BUK9832-55A,115 automotive qualified?
    Yes, it is automotive qualified and adheres to AEC standards.
  6. What package type is used for the BUK9832-55A,115?
    The device is packaged in a SOT223 (SC-73) package.
  7. What are the typical applications of the BUK9832-55A,115?
    It is used in automotive systems, power switching, and the control of motors, lamps, and solenoids.
  8. What is the total power dissipation (Ptot) of the device?
    The total power dissipation (Ptot) is 8 W.
  9. Is the BUK9832-55A,115 suitable for logic level gate drive sources?
    Yes, it is suitable for logic level gate drive sources.
  10. What is the reverse recovery charge (Qr) of the device?
    The reverse recovery charge (Qr) is typically 80 nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:29mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:1594 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-73
Package / Case:TO-261-4, TO-261AA
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BUK9832-55A,115
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MOSFET N-CH 55V 12A SOT223

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