BUK98180-100A,115
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NXP USA Inc. BUK98180-100A,115

Manufacturer No:
BUK98180-100A,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 4.6A SOT-223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK98180-100A,115 is a discrete semiconductor product manufactured by NXP USA Inc. This component is an N-channel MOSFET, designed for high-performance applications. Although it is currently listed as obsolete and no longer in production, it remains relevant for existing designs and maintenance of older systems. The MOSFET is packaged in a SC-73 (SOT-223) surface-mounted package, which is compact and suitable for a variety of electronic circuits.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
ID (Continuous Drain Current)4.6 A
RDS(on) (On-State Drain-Source Resistance)Typically 22 mΩ at VGS = 10 V
VGS(th) (Threshold Voltage)Typically 2.5 V
Ptot (Total Power Dissipation)40 W
TJ (Junction Temperature)-55 to 150 °C
PackageSC-73 (SOT-223)

Key Features

  • High continuous drain current of 4.6 A, making it suitable for high-power applications.
  • Low on-state drain-source resistance (RDS(on)) of typically 22 mΩ at VGS = 10 V, reducing power losses.
  • Compact SC-73 (SOT-223) surface-mounted package for efficient board space utilization.
  • Wide operating junction temperature range from -55 to 150 °C, enhancing reliability in various environmental conditions.

Applications

The BUK98180-100A,115 MOSFET is designed for use in a variety of high-power electronic circuits, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Audio amplifiers and other high-current applications.
  • Industrial and automotive systems requiring robust and reliable power management.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BUK98180-100A,115?
    The maximum drain-source voltage is 100 V.
  2. What is the continuous drain current (ID) of this MOSFET?
    The continuous drain current is 4.6 A.
  3. What is the typical on-state drain-source resistance (RDS(on))?
    The typical on-state drain-source resistance is 22 mΩ at VGS = 10 V.
  4. What is the package type of the BUK98180-100A,115?
    The package type is SC-73 (SOT-223).
  5. Is the BUK98180-100A,115 still in production?
    No, the BUK98180-100A,115 is listed as obsolete and is no longer manufactured.
  6. What are some common applications for this MOSFET?
    Common applications include power supplies, motor control systems, audio amplifiers, and industrial/automotive systems.
  7. What is the junction temperature range for this component?
    The junction temperature range is from -55 to 150 °C.
  8. What is the total power dissipation (Ptot) of the BUK98180-100A,115?
    The total power dissipation is 40 W.
  9. Where can I find detailed specifications for the BUK98180-100A,115?
    Detailed specifications can be found in the datasheet available from NXP or through distributors like Digi-Key.
  10. Are there any substitutes available for the BUK98180-100A,115?
    Yes, substitutes can be viewed through distributors like Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:173mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:619 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-73
Package / Case:TO-261-4, TO-261AA
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BUK98180-100A,115
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