BUK98180-100A,115
  • Share:

NXP USA Inc. BUK98180-100A,115

Manufacturer No:
BUK98180-100A,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 4.6A SOT-223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK98180-100A,115 is a discrete semiconductor product manufactured by NXP USA Inc. This component is an N-channel MOSFET, designed for high-performance applications. Although it is currently listed as obsolete and no longer in production, it remains relevant for existing designs and maintenance of older systems. The MOSFET is packaged in a SC-73 (SOT-223) surface-mounted package, which is compact and suitable for a variety of electronic circuits.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
ID (Continuous Drain Current)4.6 A
RDS(on) (On-State Drain-Source Resistance)Typically 22 mΩ at VGS = 10 V
VGS(th) (Threshold Voltage)Typically 2.5 V
Ptot (Total Power Dissipation)40 W
TJ (Junction Temperature)-55 to 150 °C
PackageSC-73 (SOT-223)

Key Features

  • High continuous drain current of 4.6 A, making it suitable for high-power applications.
  • Low on-state drain-source resistance (RDS(on)) of typically 22 mΩ at VGS = 10 V, reducing power losses.
  • Compact SC-73 (SOT-223) surface-mounted package for efficient board space utilization.
  • Wide operating junction temperature range from -55 to 150 °C, enhancing reliability in various environmental conditions.

Applications

The BUK98180-100A,115 MOSFET is designed for use in a variety of high-power electronic circuits, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Audio amplifiers and other high-current applications.
  • Industrial and automotive systems requiring robust and reliable power management.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BUK98180-100A,115?
    The maximum drain-source voltage is 100 V.
  2. What is the continuous drain current (ID) of this MOSFET?
    The continuous drain current is 4.6 A.
  3. What is the typical on-state drain-source resistance (RDS(on))?
    The typical on-state drain-source resistance is 22 mΩ at VGS = 10 V.
  4. What is the package type of the BUK98180-100A,115?
    The package type is SC-73 (SOT-223).
  5. Is the BUK98180-100A,115 still in production?
    No, the BUK98180-100A,115 is listed as obsolete and is no longer manufactured.
  6. What are some common applications for this MOSFET?
    Common applications include power supplies, motor control systems, audio amplifiers, and industrial/automotive systems.
  7. What is the junction temperature range for this component?
    The junction temperature range is from -55 to 150 °C.
  8. What is the total power dissipation (Ptot) of the BUK98180-100A,115?
    The total power dissipation is 40 W.
  9. Where can I find detailed specifications for the BUK98180-100A,115?
    Detailed specifications can be found in the datasheet available from NXP or through distributors like Digi-Key.
  10. Are there any substitutes available for the BUK98180-100A,115?
    Yes, substitutes can be viewed through distributors like Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:173mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:619 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-73
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

-
261

Please send RFQ , we will respond immediately.

Same Series
BUK98180-100A,115
BUK98180-100A,115
MOSFET N-CH 100V 4.6A SOT-223

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
SCTWA30N120
SCTWA30N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BAP50-03,115
BAP50-03,115
NXP USA Inc.
RF DIODE PIN 50V 500MW SOD323
BAS56/DG/B2215
BAS56/DG/B2215
NXP USA Inc.
BAS56 - RECTIFIER DIODE
LPC1114FHN33/202,5
LPC1114FHN33/202,5
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 32HVQFN
MKE16Z64VLF4
MKE16Z64VLF4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 48LQFP
MCIMX6U6AVM08ADR
MCIMX6U6AVM08ADR
NXP USA Inc.
I.MX6 ROM PERF ENHAN
MCIMX535DVP1C2R2
MCIMX535DVP1C2R2
NXP USA Inc.
IC MPU 32BIT ARM 529PBGA
UJA1168TK,118
UJA1168TK,118
NXP USA Inc.
IC TRANSCEIVER FULL 1/1 14HVSON
PCA9534BS3,118
PCA9534BS3,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16HVQFN
PCA9575PW1,118
PCA9575PW1,118
NXP USA Inc.
IC I/O EXPANDER I2C 16B 24TSSOP
74LVC3G17DP-Q100125
74LVC3G17DP-Q100125
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
MMPF0200NPAEP557
MMPF0200NPAEP557
NXP USA Inc.
POWER SUPPLY SUPPORT CIRCUIT AD
MC56F82748VLH,557
MC56F82748VLH,557
NXP USA Inc.
DIGITAL SIGNAL CONTROLLER