BUK7Y7R6-40E/C4115
  • Share:

NXP USA Inc. BUK7Y7R6-40E/C4115

Manufacturer No:
BUK7Y7R6-40E/C4115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK7Y7R6-40E/C4115 is an N-channel MOSFET produced by NXP USA Inc. This device is part of NXP's TrenchMOS technology family and is designed to meet the stringent requirements of automotive and industrial applications. It is qualified to the AEC-Q101 standard, ensuring reliability and performance in demanding environments.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)40 V
RDS(on) (Drain-Source On-Resistance)7.6 mΩ
PackageLFPAK56 (Power SO8)
Qualification StandardAEC-Q101

Key Features

  • Low on-resistance (RDS(on)) of 7.6 mΩ, reducing power losses and improving efficiency.
  • High drain-source voltage (VDS) of 40 V, suitable for a wide range of applications.
  • TrenchMOS technology for enhanced performance and reliability.
  • LFPAK56 (Power SO8) package, offering a compact and thermally efficient design.
  • AEC-Q101 qualified, ensuring compliance with automotive standards.

Applications

The BUK7Y7R6-40E/C4115 is suitable for various applications, including:

  • Automotive systems: power management, motor control, and battery management.
  • Industrial power systems: DC-DC converters, power supplies, and motor drives.
  • Consumer electronics: power management in high-power devices.

Q & A

  1. What is the drain-source voltage rating of the BUK7Y7R6-40E/C4115?
    The drain-source voltage rating is 40 V.
  2. What is the on-resistance (RDS(on)) of the BUK7Y7R6-40E/C4115?
    The on-resistance is 7.6 mΩ.
  3. What package type is used for the BUK7Y7R6-40E/C4115?
    The package type is LFPAK56 (Power SO8).
  4. Is the BUK7Y7R6-40E/C4115 qualified to any automotive standards?
    Yes, it is qualified to the AEC-Q101 standard.
  5. What technology is used in the BUK7Y7R6-40E/C4115?
    The device uses TrenchMOS technology.
  6. What are some common applications for the BUK7Y7R6-40E/C4115?
    Common applications include automotive systems, industrial power systems, and consumer electronics.
  7. Why is the LFPAK56 package beneficial?
    The LFPAK56 package is beneficial due to its compact design and thermal efficiency.
  8. How does the low on-resistance benefit the application?
    The low on-resistance reduces power losses and improves overall efficiency.
  9. Can the BUK7Y7R6-40E/C4115 be used in high-power devices?
    Yes, it is suitable for use in high-power devices due to its high voltage and current ratings.
  10. Where can I find detailed specifications for the BUK7Y7R6-40E/C4115?
    Detailed specifications can be found in the datasheet available on NXP's official website or through distributors like Digi-Key and Mouser.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
175

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
DD26S2S00X/AA
DD26S2S00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T0/AA
DD26S200T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000/AA
DD26S2S5000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20
DD26S2S50T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0T2X
DD44S32S0T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200V30
DD44S3200V30
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50V5S/AA
CBC47W1S1S50V5S/AA
CONN D-SUB RCPT 47POS CRIMP
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247

Related Product By Brand

BAV99/LF1R
BAV99/LF1R
NXP USA Inc.
DIODE SWITCHING TO-236AB
BUK98150-55A,135
BUK98150-55A,135
NXP USA Inc.
MOSFET N-CH 55V 5.5A SOT-223
S9S12P32J0CFTR
S9S12P32J0CFTR
NXP USA Inc.
IC MCU 16BIT 32KB FLASH 48QFN
MC56F84550VLFR
MC56F84550VLFR
NXP USA Inc.
IC MCU 32BIT 96KB FLASH 48LQFP
MIMXRT1171CVM8A
MIMXRT1171CVM8A
NXP USA Inc.
IC MCU 32BIT EXT MEM 289MAPBGA
LPC1763FBD100,551
LPC1763FBD100,551
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 100LQFP
P1012NSE2DFB
P1012NSE2DFB
NXP USA Inc.
IC MPU Q OR IQ 800MHZ 689TEBGA
TJA1049TK/3/1Z
TJA1049TK/3/1Z
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8HVSON
UJA1075ATW/3V3WD,1
UJA1075ATW/3V3WD,1
NXP USA Inc.
IC INTFACE SPECIALIZED 32HTSSOP
74HC240D/C118
74HC240D/C118
NXP USA Inc.
IC BUFFER INVERT 6V 20SO
74LV08D/C4118
74LV08D/C4118
NXP USA Inc.
AND GATE, LV/LV-A/LVX/H SERIES
MPXAZ6115AP
MPXAZ6115AP
NXP USA Inc.
PRESSURE SENSOR ABSOLUTE 8-SOP