BUK7Y7R6-40E/C4115
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NXP USA Inc. BUK7Y7R6-40E/C4115

Manufacturer No:
BUK7Y7R6-40E/C4115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BUK7Y7R6-40E/C4115 is an N-channel MOSFET produced by NXP USA Inc. This device is part of NXP's TrenchMOS technology family and is designed to meet the stringent requirements of automotive and industrial applications. It is qualified to the AEC-Q101 standard, ensuring reliability and performance in demanding environments.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)40 V
RDS(on) (Drain-Source On-Resistance)7.6 mΩ
PackageLFPAK56 (Power SO8)
Qualification StandardAEC-Q101

Key Features

  • Low on-resistance (RDS(on)) of 7.6 mΩ, reducing power losses and improving efficiency.
  • High drain-source voltage (VDS) of 40 V, suitable for a wide range of applications.
  • TrenchMOS technology for enhanced performance and reliability.
  • LFPAK56 (Power SO8) package, offering a compact and thermally efficient design.
  • AEC-Q101 qualified, ensuring compliance with automotive standards.

Applications

The BUK7Y7R6-40E/C4115 is suitable for various applications, including:

  • Automotive systems: power management, motor control, and battery management.
  • Industrial power systems: DC-DC converters, power supplies, and motor drives.
  • Consumer electronics: power management in high-power devices.

Q & A

  1. What is the drain-source voltage rating of the BUK7Y7R6-40E/C4115?
    The drain-source voltage rating is 40 V.
  2. What is the on-resistance (RDS(on)) of the BUK7Y7R6-40E/C4115?
    The on-resistance is 7.6 mΩ.
  3. What package type is used for the BUK7Y7R6-40E/C4115?
    The package type is LFPAK56 (Power SO8).
  4. Is the BUK7Y7R6-40E/C4115 qualified to any automotive standards?
    Yes, it is qualified to the AEC-Q101 standard.
  5. What technology is used in the BUK7Y7R6-40E/C4115?
    The device uses TrenchMOS technology.
  6. What are some common applications for the BUK7Y7R6-40E/C4115?
    Common applications include automotive systems, industrial power systems, and consumer electronics.
  7. Why is the LFPAK56 package beneficial?
    The LFPAK56 package is beneficial due to its compact design and thermal efficiency.
  8. How does the low on-resistance benefit the application?
    The low on-resistance reduces power losses and improves overall efficiency.
  9. Can the BUK7Y7R6-40E/C4115 be used in high-power devices?
    Yes, it is suitable for use in high-power devices due to its high voltage and current ratings.
  10. Where can I find detailed specifications for the BUK7Y7R6-40E/C4115?
    Detailed specifications can be found in the datasheet available on NXP's official website or through distributors like Digi-Key and Mouser.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
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