BUK7Y7R6-40E/C4115
  • Share:

NXP USA Inc. BUK7Y7R6-40E/C4115

Manufacturer No:
BUK7Y7R6-40E/C4115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK7Y7R6-40E/C4115 is an N-channel MOSFET produced by NXP USA Inc. This device is part of NXP's TrenchMOS technology family and is designed to meet the stringent requirements of automotive and industrial applications. It is qualified to the AEC-Q101 standard, ensuring reliability and performance in demanding environments.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)40 V
RDS(on) (Drain-Source On-Resistance)7.6 mΩ
PackageLFPAK56 (Power SO8)
Qualification StandardAEC-Q101

Key Features

  • Low on-resistance (RDS(on)) of 7.6 mΩ, reducing power losses and improving efficiency.
  • High drain-source voltage (VDS) of 40 V, suitable for a wide range of applications.
  • TrenchMOS technology for enhanced performance and reliability.
  • LFPAK56 (Power SO8) package, offering a compact and thermally efficient design.
  • AEC-Q101 qualified, ensuring compliance with automotive standards.

Applications

The BUK7Y7R6-40E/C4115 is suitable for various applications, including:

  • Automotive systems: power management, motor control, and battery management.
  • Industrial power systems: DC-DC converters, power supplies, and motor drives.
  • Consumer electronics: power management in high-power devices.

Q & A

  1. What is the drain-source voltage rating of the BUK7Y7R6-40E/C4115?
    The drain-source voltage rating is 40 V.
  2. What is the on-resistance (RDS(on)) of the BUK7Y7R6-40E/C4115?
    The on-resistance is 7.6 mΩ.
  3. What package type is used for the BUK7Y7R6-40E/C4115?
    The package type is LFPAK56 (Power SO8).
  4. Is the BUK7Y7R6-40E/C4115 qualified to any automotive standards?
    Yes, it is qualified to the AEC-Q101 standard.
  5. What technology is used in the BUK7Y7R6-40E/C4115?
    The device uses TrenchMOS technology.
  6. What are some common applications for the BUK7Y7R6-40E/C4115?
    Common applications include automotive systems, industrial power systems, and consumer electronics.
  7. Why is the LFPAK56 package beneficial?
    The LFPAK56 package is beneficial due to its compact design and thermal efficiency.
  8. How does the low on-resistance benefit the application?
    The low on-resistance reduces power losses and improves overall efficiency.
  9. Can the BUK7Y7R6-40E/C4115 be used in high-power devices?
    Yes, it is suitable for use in high-power devices due to its high voltage and current ratings.
  10. Where can I find detailed specifications for the BUK7Y7R6-40E/C4115?
    Detailed specifications can be found in the datasheet available on NXP's official website or through distributors like Digi-Key and Mouser.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
175

Please send RFQ , we will respond immediately.

Same Series
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S10LVLS
DD15S10LVLS
CONN D-SUB HD RCPT 15POS CRIMP
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S100V50
CBC47W1S100V50
CONN D-SUB RCPT 47POS CRIMP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000/AA
DD26S2F000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V50
DD26S2S0V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W0X/AA
DD26S20W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S1S50V50
RD50S1S50V50
CONN D-SUB RCPT 50POS CRIMP
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33

Related Product By Brand

TDA8763AM/3/C4,112
TDA8763AM/3/C4,112
NXP USA Inc.
IC ADC 10BIT SIGMA-DELTA 28SSOP
MC9S08AC16CFGE
MC9S08AC16CFGE
NXP USA Inc.
IC MCU 8BIT 16KB FLASH 44LQFP
LPC2294HBD144/01K
LPC2294HBD144/01K
NXP USA Inc.
IC MCU 16/32B 256KB FLSH 144LQFP
S9S12G64ACLH
S9S12G64ACLH
NXP USA Inc.
IC MCU 16BIT 64KB FLASH 64LQFP
SPC5777CDK3MMO3
SPC5777CDK3MMO3
NXP USA Inc.
IC MCU 32BIT 8MB FLASH 516MAPBGA
74HCT4851PW/S400118
74HCT4851PW/S400118
NXP USA Inc.
SINGLE-ENDED MUX, 8 CHANNEL
TDA8932T/N1,118
TDA8932T/N1,118
NXP USA Inc.
IC AMP CLSS D MONO/STER 55W 32SO
74LVC07APW/S505118
74LVC07APW/S505118
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
N74F07D,602
N74F07D,602
NXP USA Inc.
IC BUFFER NON-INVERT 5.5V 14SO
TDA8026ET/C2518
TDA8026ET/C2518
NXP USA Inc.
IC SMART CARD SLOT 64TFBGA
S912ZVMC25F1MKK557
S912ZVMC25F1MKK557
NXP USA Inc.
MICROCONTROLLER, 16-BIT, HCS12 C
LM75ADP/DG,118
LM75ADP/DG,118
NXP USA Inc.
SENSOR DIGITAL -55C-125C 8TSSOP