BUK7210-55B/C1,118
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NXP USA Inc. BUK7210-55B/C1,118

Manufacturer No:
BUK7210-55B/C1,118
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 55V 75A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK7210-55B/C1,118 is a high-performance N-Channel MOSFET produced by NXP USA Inc. This component is designed for high-power applications, offering excellent switching characteristics and thermal performance. It is packaged in a TO-252-3 (DPak) case, which is RoHS3 compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)55 V
ID (Continuous Drain Current)75 A
Ptot (Total Power Dissipation at Tc)167 W
RDS(on) (On-State Drain-Source Resistance)Typically 1.8 mΩ at VGS = 10 V, ID = 50 A
PackageTO-252-3 (DPak)
RoHS StatusRoHS3 Compliant

Key Features

  • High continuous drain current of 75 A.
  • Low on-state drain-source resistance (RDS(on)) of typically 1.8 mΩ.
  • High total power dissipation of 167 W at Tc.
  • TO-252-3 (DPak) package for efficient heat dissipation.
  • RoHS3 compliant, ensuring environmental sustainability.

Applications

The BUK7210-55B/C1,118 is suitable for a variety of high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Automotive systems, such as battery management and power distribution.
  • Renewable energy systems, including solar and wind power.

Q & A

  1. What is the maximum drain-source voltage of the BUK7210-55B/C1,118?
    The maximum drain-source voltage (VDS) is 55 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (ID) is 75 A.
  3. What is the typical on-state drain-source resistance?
    The typical on-state drain-source resistance (RDS(on)) is 1.8 mΩ at VGS = 10 V, ID = 50 A.
  4. What is the total power dissipation at Tc?
    The total power dissipation at Tc is 167 W.
  5. What package type is used for the BUK7210-55B/C1,118?
    The package type is TO-252-3 (DPak).
  6. Is the BUK7210-55B/C1,118 RoHS compliant?
    Yes, it is RoHS3 compliant.
  7. What are some common applications for this MOSFET?
    Common applications include power supplies, motor control, industrial automation, automotive systems, and renewable energy systems.
  8. Where can I find detailed specifications for the BUK7210-55B/C1,118?
    Detailed specifications can be found in the datasheet available on the manufacturer's website or through distributors like DigiKey.
  9. Is the BUK7210-55B/C1,118 available for immediate purchase?
    Availability may vary; it is recommended to check with the supplier for current stock and lead times.
  10. What are the benefits of using the TO-252-3 (DPak) package?
    The TO-252-3 (DPak) package offers efficient heat dissipation and is suitable for high-power applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2453 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):167W (Tc)
Operating Temperature:-55°C ~ 185°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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