BSS84AKW-B115
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NXP USA Inc. BSS84AKW-B115

Manufacturer No:
BSS84AKW-B115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
P-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84AKW-B115 is a P-channel enhancement mode Field-Effect Transistor (FET) produced by NXP USA Inc., now part of Nexperia. This MOSFET is housed in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package and utilizes Trench MOSFET technology. It is designed for high efficiency and reliability, making it suitable for a wide range of applications across various industries.

Key Specifications

Parameter Value Unit
Type Number BSS84AKW -
Package SOT323 (SC-70) -
Channel Type P-channel -
Number of Transistors 1 -
VDS (max) -50 V
RDSon (max) @ VGS = 10 V 7500
RDSon (max) @ VGS = 5 V 8500
Tj (max) 150 °C
ID (max) -0.15 A
QGD (typ) 0.09 nC
Ptot (max) 0.31 W
VGSth (typ) -1.6 V
Automotive Qualified Yes (AEC-Q101) -

Key Features

  • Trench MOSFET Technology: Enhances performance with lower RDSon and improved thermal characteristics.
  • Small Package Size: SOT323 (SC-70) package makes it ideal for space-constrained designs.
  • High Efficiency: Low on-resistance and high current capability ensure efficient operation.
  • Automotive Qualified: Meets AEC-Q101 standards, making it suitable for automotive applications.
  • Environmental Compliance: Compliant with EU RoHS, CN RoHS, and ELV directives, ensuring environmental sustainability.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Industrial Control: Used in industrial control systems for its reliability and efficiency.
  • Consumer Electronics: Found in consumer electronics such as power management circuits and switching applications.
  • Power Management: Ideal for power management in computing, mobile, and wearable devices.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSS84AKW-B115?

    The maximum drain-source voltage (VDS) is -50 V.

  2. What is the typical threshold voltage (VGSth) of the BSS84AKW-B115?

    The typical threshold voltage (VGSth) is -1.6 V.

  3. What is the maximum drain current (ID) of the BSS84AKW-B115?

    The maximum drain current (ID) is -0.15 A.

  4. Is the BSS84AKW-B115 automotive qualified?

    Yes, it is qualified to AEC-Q101 standards.

  5. What package type does the BSS84AKW-B115 use?

    The BSS84AKW-B115 is housed in a SOT323 (SC-70) package.

  6. What is the maximum junction temperature (Tj) of the BSS84AKW-B115?

    The maximum junction temperature (Tj) is 150°C.

  7. Is the BSS84AKW-B115 compliant with environmental regulations?

    Yes, it is compliant with EU RoHS, CN RoHS, and ELV directives.

  8. What is the typical gate-drain charge (QGD) of the BSS84AKW-B115?

    The typical gate-drain charge (QGD) is 0.09 nC.

  9. What is the maximum total power dissipation (Ptot) of the BSS84AKW-B115?

    The maximum total power dissipation (Ptot) is 0.31 W.

  10. How can I obtain samples of the BSS84AKW-B115?

    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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