BS108/01,126
  • Share:

NXP USA Inc. BS108/01,126

Manufacturer No:
BS108/01,126
Manufacturer:
NXP USA Inc.
Package:
Tape & Box (TB)
Description:
MOSFET N-CH 200V 300MA TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BS108/01,126 is an N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) produced by NXP USA Inc. This component is part of the BS108 series and is known for its reliability and performance in various electronic applications. The BS108/01,126 is packaged in a TO-92-3 through-hole configuration, making it suitable for a wide range of circuit designs.

Key Specifications

ParameterValue
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current Rating (Id)300 mA (Ta)
Power Dissipation (Pd)1 W (Ta)
PackageTO-92-3
Part StatusObsolete

Key Features

  • N-Channel MOSFET with a drain to source voltage of 200 V, making it suitable for high-voltage applications.
  • Current rating of 300 mA and power dissipation of 1 W, ensuring reliable operation in various circuits.
  • Through-hole TO-92-3 packaging, which is easy to integrate into existing designs.
  • High performance and reliability, characteristic of NXP's semiconductor products.

Applications

The BS108/01,126 MOSFET is versatile and can be used in a variety of applications, including but not limited to:

  • Power switching and amplification in electronic circuits.
  • Motor control and drive systems.
  • Audio amplifiers and other high-fidelity applications.
  • General-purpose switching in industrial and consumer electronics.

Q & A

  1. What is the drain to source voltage (Vdss) of the BS108/01,126 MOSFET?
    The drain to source voltage (Vdss) is 200 V.
  2. What is the current rating (Id) of the BS108/01,126?
    The current rating (Id) is 300 mA (Ta).
  3. What is the power dissipation (Pd) of the BS108/01,126?
    The power dissipation (Pd) is 1 W (Ta).
  4. What type of packaging does the BS108/01,126 use?
    The BS108/01,126 is packaged in a TO-92-3 through-hole configuration.
  5. Is the BS108/01,126 still in production?
    No, the BS108/01,126 is listed as obsolete.
  6. What are some common applications for the BS108/01,126?
    Common applications include power switching, motor control, audio amplifiers, and general-purpose switching in industrial and consumer electronics.
  7. What is the FET type of the BS108/01,126?
    The FET type is N-Channel.
  8. What technology is used in the BS108/01,126?
    The technology used is MOSFET (Metal Oxide Semiconductor Field-Effect Transistor).
  9. Where can I find detailed specifications for the BS108/01,126?
    Detailed specifications can be found on the datasheet available from NXP USA Inc. or through distributors like Digi-Key and Mouser.
  10. Can the BS108/01,126 be used in high-temperature environments?
    While it can handle typical operating temperatures, it is important to refer to the datasheet for specific temperature ratings and limitations.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.8V
Rds On (Max) @ Id, Vgs:5Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id:1.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:120 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92-3
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
0 Remaining View Similar

In Stock

-
587

Please send RFQ , we will respond immediately.

Same Series
BS108/01,126
BS108/01,126
MOSFET N-CH 200V 300MA TO92-3

Related Product By Categories

2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK

Related Product By Brand

Z0103MA0,412
Z0103MA0,412
NXP USA Inc.
NOW WEEN - Z0103MA0 - 4 QUADRANT
MCHC908QT2CDWER
MCHC908QT2CDWER
NXP USA Inc.
IC MCU 8BIT 1.5KB FLASH 8SO
MCF52110CAE66
MCF52110CAE66
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
74LVC1G04GW/DG125
74LVC1G04GW/DG125
NXP USA Inc.
INVERTER, LVC/LCX/Z SERIES
74LVC2G32DC-Q100125
74LVC2G32DC-Q100125
NXP USA Inc.
OR GATE, LVC/LCX/Z SERIES
74HC32PW/AUJ
74HC32PW/AUJ
NXP USA Inc.
IC GATE OR 4CH 2-INP 14TSSOP
74HCT573D/C4118
74HCT573D/C4118
NXP USA Inc.
BUS DRIVER, HCT SERIES, 8-BIT
PCF8566T/S480/1,11
PCF8566T/S480/1,11
NXP USA Inc.
IC DRVR 7 SEGMNT 12 DIGIT 40VSO
MC33664ATL1EGR2
MC33664ATL1EGR2
NXP USA Inc.
TRANSFORMER PHYSICAL LAYER
BAS21SW115
BAS21SW115
NXP USA Inc.
NOW NEXPERIA BAS21SW - RECTIFIER
SA605DK,112
SA605DK,112
NXP USA Inc.
RF RX ASK/FSK 0HZ-500MHZ 20SSOP
JN5169-001-M06-2Z
JN5169-001-M06-2Z
NXP USA Inc.
RX TXRX MODULE 802.15.4 U.FL SMD