BS108/01,126
  • Share:

NXP USA Inc. BS108/01,126

Manufacturer No:
BS108/01,126
Manufacturer:
NXP USA Inc.
Package:
Tape & Box (TB)
Description:
MOSFET N-CH 200V 300MA TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BS108/01,126 is an N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) produced by NXP USA Inc. This component is part of the BS108 series and is known for its reliability and performance in various electronic applications. The BS108/01,126 is packaged in a TO-92-3 through-hole configuration, making it suitable for a wide range of circuit designs.

Key Specifications

ParameterValue
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current Rating (Id)300 mA (Ta)
Power Dissipation (Pd)1 W (Ta)
PackageTO-92-3
Part StatusObsolete

Key Features

  • N-Channel MOSFET with a drain to source voltage of 200 V, making it suitable for high-voltage applications.
  • Current rating of 300 mA and power dissipation of 1 W, ensuring reliable operation in various circuits.
  • Through-hole TO-92-3 packaging, which is easy to integrate into existing designs.
  • High performance and reliability, characteristic of NXP's semiconductor products.

Applications

The BS108/01,126 MOSFET is versatile and can be used in a variety of applications, including but not limited to:

  • Power switching and amplification in electronic circuits.
  • Motor control and drive systems.
  • Audio amplifiers and other high-fidelity applications.
  • General-purpose switching in industrial and consumer electronics.

Q & A

  1. What is the drain to source voltage (Vdss) of the BS108/01,126 MOSFET?
    The drain to source voltage (Vdss) is 200 V.
  2. What is the current rating (Id) of the BS108/01,126?
    The current rating (Id) is 300 mA (Ta).
  3. What is the power dissipation (Pd) of the BS108/01,126?
    The power dissipation (Pd) is 1 W (Ta).
  4. What type of packaging does the BS108/01,126 use?
    The BS108/01,126 is packaged in a TO-92-3 through-hole configuration.
  5. Is the BS108/01,126 still in production?
    No, the BS108/01,126 is listed as obsolete.
  6. What are some common applications for the BS108/01,126?
    Common applications include power switching, motor control, audio amplifiers, and general-purpose switching in industrial and consumer electronics.
  7. What is the FET type of the BS108/01,126?
    The FET type is N-Channel.
  8. What technology is used in the BS108/01,126?
    The technology used is MOSFET (Metal Oxide Semiconductor Field-Effect Transistor).
  9. Where can I find detailed specifications for the BS108/01,126?
    Detailed specifications can be found on the datasheet available from NXP USA Inc. or through distributors like Digi-Key and Mouser.
  10. Can the BS108/01,126 be used in high-temperature environments?
    While it can handle typical operating temperatures, it is important to refer to the datasheet for specific temperature ratings and limitations.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.8V
Rds On (Max) @ Id, Vgs:5Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id:1.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:120 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92-3
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
0 Remaining View Similar

In Stock

-
587

Please send RFQ , we will respond immediately.

Same Series
BS108/01,126
BS108/01,126
MOSFET N-CH 200V 300MA TO92-3

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

PESD5V0S1BSF/S500315
PESD5V0S1BSF/S500315
NXP USA Inc.
TVS DIODE
BFU520VL
BFU520VL
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
AFT05MS031NR1
AFT05MS031NR1
NXP USA Inc.
FET RF 40V 520MHZ TO-270-2
2N7002T,215
2N7002T,215
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
LPC1823JET100E
LPC1823JET100E
NXP USA Inc.
IC MCU 32BIT 512KB FLSH 100TFBGA
MKL26Z128VLH4
MKL26Z128VLH4
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
LPC2294HBD144/01,5
LPC2294HBD144/01,5
NXP USA Inc.
IC MCU 16/32B 256KB FLSH 144LQFP
MIMX8QP5AVUFFAB
MIMX8QP5AVUFFAB
NXP USA Inc.
MPU I.MX8 QUAD PLUS
MIMX8ML6CVNKZAB
MIMX8ML6CVNKZAB
NXP USA Inc.
IC I.MX 8M PLUS QUAD BGA
74LVC3G17DP-Q100125
74LVC3G17DP-Q100125
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
MMPF0100F1AEPR2
MMPF0100F1AEPR2
NXP USA Inc.
IC REG CONV I.MX6 12OUT 56HVQFN
UJA1061TW/5V0/C/T518
UJA1061TW/5V0/C/T518
NXP USA Inc.
FAULT-TOLERANT CAN/LIN FAIL-SAFE