SI2304DS,215
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Nexperia USA Inc. SI2304DS,215

Manufacturer No:
SI2304DS,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 1.7A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The SI2304DS,215 is a N-Channel MOSFET produced by Nexperia USA Inc. This discrete semiconductor component is designed for a variety of applications requiring high efficiency and reliability. The MOSFET is housed in a TO236AB package, making it suitable for space-constrained designs while maintaining robust performance.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
ID (Continuous Drain Current)1.7 A
RDS(on) (On-State Drain-Source Resistance)Typically 150 mΩ at VGS = 4.5 V
VGS(th) (Gate-Source Threshold Voltage)Typically 1.5 V to 3.5 V
PackageTO236AB

Key Features

  • High efficiency with low on-state resistance (RDS(on))
  • Compact TO236AB package for space-saving designs
  • High continuous drain current (ID) of 1.7 A
  • Wide operating temperature range, suitable for various environmental conditions
  • Low gate-source threshold voltage (VGS(th)) for easy switching

Applications

  • Power management and switching circuits
  • Motor control and drive systems
  • DC-DC converters and power supplies
  • Automotive and industrial control systems
  • Consumer electronics requiring efficient power handling

Q & A

  1. What is the maximum drain-source voltage of the SI2304DS,215 MOSFET?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (ID) is 1.7 A.
  3. What package type is the SI2304DS,215 MOSFET available in?
    The MOSFET is available in a TO236AB package.
  4. What is the typical on-state drain-source resistance (RDS(on)) of this MOSFET?
    The typical on-state drain-source resistance (RDS(on)) is 150 mΩ at VGS = 4.5 V.
  5. What is the gate-source threshold voltage (VGS(th)) range for this MOSFET?
    The gate-source threshold voltage (VGS(th)) range is typically 1.5 V to 3.5 V.
  6. What are some common applications for the SI2304DS,215 MOSFET?
    Common applications include power management and switching circuits, motor control, DC-DC converters, automotive systems, and consumer electronics.
  7. Is the SI2304DS,215 suitable for high-temperature environments?
    Yes, it is designed to operate over a wide temperature range, making it suitable for various environmental conditions.
  8. Where can I purchase the SI2304DS,215 MOSFET?
    You can purchase the SI2304DS,215 from distributors such as Digi-Key, Mouser Electronics, and other authorized suppliers.
  9. What is the significance of the TO236AB package?
    The TO236AB package is compact and space-saving, making it ideal for designs where board space is limited.
  10. How does the low on-state resistance benefit the performance of the SI2304DS,215?
    The low on-state resistance (RDS(on)) enhances the efficiency of the MOSFET by reducing power losses during operation.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:117mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:4.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:195 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number SI2304DS,215 SI2302DS,215
Manufacturer Nexperia USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 117mOhm @ 500mA, 10V 85mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 2V @ 1mA 650mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs 4.6 nC @ 10 V 10 nC @ 4.5 V
Vgs (Max) ±20V ±8V
Input Capacitance (Ciss) (Max) @ Vds 195 pF @ 10 V 230 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB SOT-23 (TO-236AB)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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