SI2304DS,215
  • Share:

Nexperia USA Inc. SI2304DS,215

Manufacturer No:
SI2304DS,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 1.7A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SI2304DS,215 is a N-Channel MOSFET produced by Nexperia USA Inc. This discrete semiconductor component is designed for a variety of applications requiring high efficiency and reliability. The MOSFET is housed in a TO236AB package, making it suitable for space-constrained designs while maintaining robust performance.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
ID (Continuous Drain Current)1.7 A
RDS(on) (On-State Drain-Source Resistance)Typically 150 mΩ at VGS = 4.5 V
VGS(th) (Gate-Source Threshold Voltage)Typically 1.5 V to 3.5 V
PackageTO236AB

Key Features

  • High efficiency with low on-state resistance (RDS(on))
  • Compact TO236AB package for space-saving designs
  • High continuous drain current (ID) of 1.7 A
  • Wide operating temperature range, suitable for various environmental conditions
  • Low gate-source threshold voltage (VGS(th)) for easy switching

Applications

  • Power management and switching circuits
  • Motor control and drive systems
  • DC-DC converters and power supplies
  • Automotive and industrial control systems
  • Consumer electronics requiring efficient power handling

Q & A

  1. What is the maximum drain-source voltage of the SI2304DS,215 MOSFET?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (ID) is 1.7 A.
  3. What package type is the SI2304DS,215 MOSFET available in?
    The MOSFET is available in a TO236AB package.
  4. What is the typical on-state drain-source resistance (RDS(on)) of this MOSFET?
    The typical on-state drain-source resistance (RDS(on)) is 150 mΩ at VGS = 4.5 V.
  5. What is the gate-source threshold voltage (VGS(th)) range for this MOSFET?
    The gate-source threshold voltage (VGS(th)) range is typically 1.5 V to 3.5 V.
  6. What are some common applications for the SI2304DS,215 MOSFET?
    Common applications include power management and switching circuits, motor control, DC-DC converters, automotive systems, and consumer electronics.
  7. Is the SI2304DS,215 suitable for high-temperature environments?
    Yes, it is designed to operate over a wide temperature range, making it suitable for various environmental conditions.
  8. Where can I purchase the SI2304DS,215 MOSFET?
    You can purchase the SI2304DS,215 from distributors such as Digi-Key, Mouser Electronics, and other authorized suppliers.
  9. What is the significance of the TO236AB package?
    The TO236AB package is compact and space-saving, making it ideal for designs where board space is limited.
  10. How does the low on-state resistance benefit the performance of the SI2304DS,215?
    The low on-state resistance (RDS(on)) enhances the efficiency of the MOSFET by reducing power losses during operation.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:117mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:4.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:195 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
201

Please send RFQ , we will respond immediately.

Similar Products

Part Number SI2304DS,215 SI2302DS,215
Manufacturer Nexperia USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 117mOhm @ 500mA, 10V 85mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 2V @ 1mA 650mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs 4.6 nC @ 10 V 10 nC @ 4.5 V
Vgs (Max) ±20V ±8V
Input Capacitance (Ciss) (Max) @ Vds 195 pF @ 10 V 230 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB SOT-23 (TO-236AB)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
STF4N80K5
STF4N80K5
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

BAT854SW,115
BAT854SW,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT323
PDZ33B,115
PDZ33B,115
Nexperia USA Inc.
DIODE ZENER 33V 400MW SOD323
PDZ12B,115
PDZ12B,115
Nexperia USA Inc.
DIODE ZENER 12V 400MW SOD323
BZX384-B3V3,115
BZX384-B3V3,115
Nexperia USA Inc.
DIODE ZENER 3.3V 300MW SOD323
BCP56-10TX
BCP56-10TX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BC807-16HR
BC807-16HR
Nexperia USA Inc.
BC807-16H/SOT23/TO-236AB
74LVC4066PW,112
74LVC4066PW,112
Nexperia USA Inc.
IC SWITCH QUAD SPST 14TSSOP
74LVC1G126GW-Q100H
74LVC1G126GW-Q100H
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 5TSSOP
74LVC240ADB,118
74LVC240ADB,118
Nexperia USA Inc.
IC BUFFER INVERT 3.6V 20SSOP
74HCT04PW,118
74HCT04PW,118
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14TSSOP
HEF4094BTTJ
HEF4094BTTJ
Nexperia USA Inc.
IC SHIFT/STORE REGISTER
NXB0104GU12X
NXB0104GU12X
Nexperia USA Inc.
IC TXRX TRANSLATING XQFN12