PSMNR58-30YLHX
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Nexperia USA Inc. PSMNR58-30YLHX

Manufacturer No:
PSMNR58-30YLHX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 300A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMNR58-30YLHX is a high-performance N-channel MOSFET manufactured by Nexperia USA Inc. This device is part of the LFPAK56 package series, known for its compact size and high power density. The PSMNR58-30YLHX is designed to meet the demands of modern power electronics, offering excellent switching characteristics and low on-state resistance.

Key Specifications

GS = 10 V
ParameterValue
VDS (Drain-Source Voltage)30 V
ID (Continuous Drain Current)300 A
RDS(on) (On-State Resistance)
VGS(th) (Threshold Voltage)
PD (Power Dissipation)
Package

Key Features

  • High current capability of up to 300 A, making it suitable for high-power applications.
  • Low on-state resistance (RDS(on)) of typically 0.55 mΩ, reducing power losses.
  • Compact LFPAK56 package, enhancing thermal performance and reducing PCB space.
  • High switching speed and low gate charge, ideal for high-frequency applications.
  • Robust and reliable design, suitable for demanding environments.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, including electric vehicles and hybrid vehicles.
  • Industrial power systems, such as welding and plasma cutting.
  • Renewable energy systems, including solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the PSMNR58-30YLHX?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the continuous drain current rating of the PSMNR58-30YLHX?
    The continuous drain current (ID) is 300 A.
  3. What is the typical on-state resistance of the PSMNR58-30YLHX?
    The typical on-state resistance (RDS(on)) is 0.55 mΩ at VGS = 10 V.
  4. What package type is used for the PSMNR58-30YLHX?
    The PSMNR58-30YLHX is packaged in the LFPAK56 package.
  5. What are some common applications for the PSMNR58-30YLHX?
    Common applications include power supplies, motor control systems, automotive systems, industrial power systems, and renewable energy systems.
  6. What is the threshold voltage of the PSMNR58-30YLHX?
    The threshold voltage (VGS(th)) is typically 1.5 V.
  7. How does the LFPAK56 package benefit the PSMNR58-30YLHX?
    The LFPAK56 package enhances thermal performance and reduces PCB space due to its compact design.
  8. Is the PSMNR58-30YLHX suitable for high-frequency applications?
    Yes, it is suitable due to its high switching speed and low gate charge.
  9. Where can I purchase the PSMNR58-30YLHX?
    You can purchase the PSMNR58-30YLHX from distributors such as Digi-Key, Mouser Electronics, and Arrow Electronics.
  10. What are the advantages of using the PSMNR58-30YLHX in power electronics?
    The advantages include high current capability, low on-state resistance, and robust design, making it ideal for demanding power electronics applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:380A (Tj)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:98 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:Schottky Diode (Body)
Power Dissipation (Max):- 
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56; Power-SO8
Package / Case:SOT-1023, 4-LFPAK
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