PSMN8R3-40YS,115
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Nexperia USA Inc. PSMN8R3-40YS,115

Manufacturer No:
PSMN8R3-40YS,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 70A LFPAK56
Delivery:
Payment:
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Product Introduction

Overview

The PSMN8R3-40YS,115 is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This device is part of the Advanced TrenchMOS technology family, known for its low RDSon and low gate charge, which contribute to high efficiency in switching power converters. The MOSFET is packaged in the LFPAK56 (Power-SO8) surface mount package, offering improved mechanical and thermal characteristics.

Key Specifications

ParameterValue
Voltage Rating (Vds)40 V
Continuous Drain Current (Id)70 A (at Tc = 100°C)
Pulse Drain Current (Idm)274 A
Power Dissipation (Ptot)74 W (at Tc = 100°C)
On-State Resistance (Rds(on))Low Rds(on) - see datasheet for specific values
Gate Threshold Voltage (Vgs(th))Typically 1.5 V to 2.5 V
Package TypeLFPAK56 (Power-SO8)

Key Features

  • Advanced TrenchMOS technology for low RDSon and low gate charge
  • High efficiency in switching power converters
  • Improved mechanical and thermal characteristics
  • LFPAK56 (Power-SO8) surface mount package for compact design
  • High continuous and pulse drain current capabilities

Applications

  • Switching power converters and power supplies
  • Motor control and drive systems
  • Power management in automotive and industrial applications
  • High-frequency switching applications requiring low RDSon and gate charge

Q & A

  1. What is the voltage rating of the PSMN8R3-40YS,115 MOSFET?
    The voltage rating (Vds) is 40 V.
  2. What is the continuous drain current of this MOSFET?
    The continuous drain current (Id) is 70 A at Tc = 100°C.
  3. What is the pulse drain current of this MOSFET?
    The pulse drain current (Idm) is 274 A.
  4. What is the power dissipation of this MOSFET?
    The power dissipation (Ptot) is 74 W at Tc = 100°C.
  5. What package type does the PSMN8R3-40YS,115 use?
    The package type is LFPAK56 (Power-SO8).
  6. What are the key benefits of the Advanced TrenchMOS technology in this MOSFET?
    The key benefits include low RDSon and low gate charge, leading to high efficiency in switching power converters.
  7. In which applications is the PSMN8R3-40YS,115 commonly used?
    Common applications include switching power converters, motor control and drive systems, and power management in automotive and industrial settings.
  8. What are the thermal characteristics of this MOSFET?
    The MOSFET has improved thermal characteristics due to its LFPAK56 package.
  9. How does the low RDSon benefit the performance of this MOSFET?
    The low RDSon reduces power losses and increases efficiency in switching applications.
  10. Where can I find detailed specifications for the PSMN8R3-40YS,115?
    Detailed specifications can be found in the datasheet available on Nexperia's official website and other electronic component distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1215 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):74W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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