Overview
The PSMN7R0-30YL,115 is a logic level N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is designed using TrenchMOS technology and is packaged in the LFPAK56; Power-SO8 (SOT669) format. It is optimized for high efficiency and reliability, making it suitable for a wide range of applications across various industries.
Key Specifications
| Parameter | Value |
|---|---|
| Type Number | PSMN7R0-30YL |
| Orderable Part Number | PSMN7R0-30YL,115 |
| Package | LFPAK56; Power-SO8 (SOT669) |
| Channel Type | N-Channel |
| VDS [max] | 30 V |
| RDSon [max] @ VGS = 10 V | 7 mΩ |
| RDSon [max] @ VGS = 4.5 V; @25°C | 9.1 mΩ |
| Tj [max] | 175°C |
| ID [max] | 76 A |
| QGD [typ] | 2.9 nC |
| QG(tot) [typ] @ VGS = 4.5 V | 10 nC |
| QG(tot) [typ] @ VGS = 10 V | 22 nC |
| Ptot [max] | 51 W |
| Qr [typ] | 22 nC |
| VGSth [typ] | 1.7 V |
| Ciss [typ] | 1270 pF |
| Coss [typ] | 255 pF |
Key Features
- Logic Level Operation: The MOSFET operates with a logic level gate voltage, making it compatible with low-voltage control signals.
- Low On-Resistance: With an RDSon of 7 mΩ at VGS = 10 V, this MOSFET offers low on-resistance, reducing power losses and improving efficiency.
- High Current Capability: The device can handle a maximum continuous drain current of 76 A, making it suitable for high-power applications.
- Compact Packaging: The LFPAK56; Power-SO8 (SOT669) package is designed for space-saving and thermal efficiency.
- High Junction Temperature: The MOSFET can operate up to a junction temperature of 175°C, enhancing its reliability in demanding environments.
Applications
- Automotive Systems: Suitable for various automotive applications due to its high reliability and efficiency.
- Industrial Control: Used in industrial control systems, motor control, and power management.
- Power Supplies: Ideal for use in switch-mode power supplies, DC-DC converters, and other power management circuits.
- Consumer Electronics: Found in consumer electronics such as mobile devices, wearables, and computing equipment.
- Renewable Energy Systems: Used in solar and wind power systems for efficient power conversion.
Q & A
- What is the maximum drain-source voltage (VDS) of the PSMN7R0-30YL,115?
The maximum drain-source voltage (VDS) is 30 V.
- What is the on-resistance (RDSon) at VGS = 10 V?
The on-resistance (RDSon) at VGS = 10 V is 7 mΩ.
- What is the maximum continuous drain current (ID)?
The maximum continuous drain current (ID) is 76 A.
- What is the package type of the PSMN7R0-30YL,115?
The package type is LFPAK56; Power-SO8 (SOT669).
- What is the maximum junction temperature (Tj)?
The maximum junction temperature (Tj) is 175°C.
- Is the PSMN7R0-30YL,115 RoHS compliant?
Yes, the PSMN7R0-30YL,115 is RoHS compliant.
- What are the typical gate-source threshold voltage (VGSth) and gate-drain charge (QGD)?
The typical gate-source threshold voltage (VGSth) is 1.7 V, and the typical gate-drain charge (QGD) is 2.9 nC.
- What are some common applications of the PSMN7R0-30YL,115?
Common applications include automotive systems, industrial control, power supplies, consumer electronics, and renewable energy systems.
- How does the PSMN7R0-30YL,115 contribute to energy efficiency in designs?
The PSMN7R0-30YL,115 contributes to energy efficiency through its low on-resistance, high current capability, and compact packaging, which reduce power losses and improve overall system efficiency.
- Where can I find detailed datasheets and models for the PSMN7R0-30YL,115?
Detailed datasheets, SPICE models, and thermal models can be found on the Nexperia website and through authorized distributors.
