PSMN7R0-30YLC,115
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Nexperia USA Inc. PSMN7R0-30YLC,115

Manufacturer No:
PSMN7R0-30YLC,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 61A LFPAK56
Delivery:
Payment:
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Product Introduction

Overview

The PSMN7R0-30YLC,115 is a logic level enhancement mode N-channel MOSFET produced by Nexperia USA Inc. This component is packaged in the LFPAK56 (Power-SO8) format, which is designed to provide high power density and thermal performance. It is suitable for a wide range of industrial and communications applications due to its robust specifications and reliability.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)30V
Continuous Drain Current (ID) at Tc61A
Power Dissipation (PTOT) at Tc48W
On-State Resistance (RDS(on))7.1
Package TypeLFPAK56 (Power-SO8)

Key Features

  • Logic level enhancement mode N-channel MOSFET for easy control with low voltage logic signals.
  • High power density and thermal performance due to the LFPAK56 package.
  • Low on-state resistance (RDS(on)) of 7.1 mΩ, reducing power losses.
  • High continuous drain current (ID) of 61 A at Tc.
  • Robust and reliable design suitable for industrial and communications applications.

Applications

The PSMN7R0-30YLC,115 is designed for use in a variety of applications, including:

  • Industrial power management systems.
  • Communications equipment.
  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive and aerospace applications requiring high reliability.

Q & A

  1. What is the drain-source voltage rating of the PSMN7R0-30YLC,115?
    The drain-source voltage rating is 30 V.
  2. What is the continuous drain current at Tc for this MOSFET?
    The continuous drain current at Tc is 61 A.
  3. What is the on-state resistance (RDS(on)) of this component?
    The on-state resistance is 7.1 mΩ.
  4. In what package is the PSMN7R0-30YLC,115 available?
    The component is packaged in the LFPAK56 (Power-SO8) format.
  5. What are some typical applications for this MOSFET?
    Typical applications include industrial power management, communications equipment, power supplies, motor control, and automotive/aerospace systems.
  6. Is this MOSFET suitable for high-power applications?
    Yes, it is designed for high-power applications with a power dissipation of 48 W at Tc.
  7. What is the significance of the logic level enhancement mode in this MOSFET?
    The logic level enhancement mode allows for easy control with low voltage logic signals.
  8. Where can I find detailed specifications for the PSMN7R0-30YLC,115?
    Detailed specifications can be found in the datasheet available on Nexperia's official website or through distributors like Digi-Key and Arrow Electronics.
  9. Is the PSMN7R0-30YLC,115 available for immediate shipment?
    Availability may vary; check with the distributor for current stock status.
  10. What are the benefits of using the LFPAK56 package?
    The LFPAK56 package offers high power density and improved thermal performance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:61A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1057 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):48W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PSMN7R0-30YLC,115 PSMN8R0-30YLC,115 PSMN7R0-30MLC,115 PSMN7R0-30YL,115
Manufacturer Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 61A (Tc) 54A (Tc) 67A (Tc) 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.1mOhm @ 20A, 10V 7.9mOhm @ 15A, 10V 7mOhm @ 15A, 10V 7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA 1.95V @ 1mA 2.15V @ 1mA 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V 15 nC @ 10 V 17.9 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1057 pF @ 15 V 848 pF @ 15 V 1076 pF @ 15 V 1270 pF @ 12 V
FET Feature - - - -
Power Dissipation (Max) 48W (Tc) 42W (Tc) 57W (Tc) 51W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK33 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SOT-1210, 8-LFPAK33 (5-Lead) SC-100, SOT-669

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