Overview
The PSMN4R0-60YS,115 is an N-channel MOSFET produced by Nexperia USA Inc., designed for high-efficiency applications. This device utilizes Advanced TrenchMOS technology, which provides low RDSon (on-resistance) and low gate charge, making it highly efficient in switching power converters. The MOSFET is packaged in the LFPAK56 (Power-SO8) package, offering improved mechanical and thermal characteristics.
Key Specifications
Parameter | Value |
---|---|
Type number | PSMN4R0-60YS |
Package | LFPAK56; Power-SO8 (SOT669) |
Channel type | N |
Number of transistors | 1 |
VDS [max] | 60 V |
RDSon [max] @ VGS = 10 V | 4 mΩ |
Tj [max] | 175 °C |
ID [max] | 100 A |
QGD [typ] | 11.2 nC |
QG(tot) [typ] @ VGS = 10 V | 56 nC |
Ptot [max] | 130 W |
Qr [typ] | 58 nC |
VGSth [typ] | 3 V |
Automotive qualified | No |
Ciss [typ] | 3501 pF |
Coss [typ] | 457 pF |
Release date | 2010-02-09 |
Key Features
- Advanced TrenchMOS technology for low RDSon and low gate charge.
- High efficiency in switching power converters.
- Improved mechanical and thermal characteristics due to the LFPAK56 package.
- High current handling capability with a maximum drain current of 100 A.
- Low thermal resistance, enhancing overall system reliability.
Applications
- DC-to-DC converters.
- Lithium-ion battery protection.
- Load switching.
- Motor control.
- Server power supplies.
- Telecom power supplies.
Q & A
- What is the maximum drain-source voltage (VDS) of the PSMN4R0-60YS,115?
The maximum drain-source voltage is 60 V. - What is the typical on-resistance (RDSon) at VGS = 10 V?
The typical on-resistance is 4 mΩ. - What is the maximum junction temperature (Tj)?
The maximum junction temperature is 175 °C. - What is the maximum drain current (ID)?
The maximum drain current is 100 A. - Is the PSMN4R0-60YS,115 automotive qualified?
No, it is not automotive qualified. - What package type is used for the PSMN4R0-60YS,115?
The package type is LFPAK56 (Power-SO8) or SOT669. - What are some common applications of the PSMN4R0-60YS,115?
Common applications include DC-to-DC converters, lithium-ion battery protection, load switching, motor control, and telecom power supplies. - What technology does the PSMN4R0-60YS,115 use?
The PSMN4R0-60YS,115 uses Advanced TrenchMOS technology. - What is the typical gate-source threshold voltage (VGSth)?
The typical gate-source threshold voltage is 3 V. - How many transistors are in the PSMN4R0-60YS,115?
There is 1 transistor in the PSMN4R0-60YS,115.