PSMN4R0-40YS,115
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Nexperia USA Inc. PSMN4R0-40YS,115

Manufacturer No:
PSMN4R0-40YS,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 100A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The PSMN4R0-40YS,115 is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This component is part of the LFPAK56 package series, known for its compact size and high power density. The MOSFET is designed to meet the demanding requirements of various industrial and automotive applications, offering superior efficiency and reliability.

Key Specifications

ParameterValue
Part NumberPSMN4R0-40YS,115
ManufacturerNexperia USA Inc.
Package TypeLFPAK56, Power-SO8
Channel TypeN-Channel
Drain-Source Voltage (Vds)40 V
Continuous Drain Current (Id)100 A (Tc)
Power Dissipation (Pd)106 W (Tc)
RoHS StatusCompliant

Key Features

  • High Current Capability: The PSMN4R0-40YS,115 can handle a continuous drain current of 100 A, making it suitable for high-power applications.
  • Low On-Resistance: This MOSFET features low on-resistance, which helps in reducing power losses and improving overall system efficiency.
  • Compact Packaging: The LFPAK56 package is designed to save PCB space while providing excellent thermal performance.
  • Automotive Qualified: This component is qualified to the AEC-Q100/Q101 standard, ensuring reliability in automotive applications.

Applications

The PSMN4R0-40YS,115 is versatile and can be used in a variety of applications, including:

  • Automotive Systems: Suitable for electric vehicles, hybrid vehicles, and other automotive power systems.
  • Industrial Power Supplies: Ideal for high-power DC-DC converters, motor drives, and power factor correction circuits.
  • Renewable Energy Systems: Can be used in solar and wind power systems to improve efficiency and reliability.
  • Robotics and Industrial Automation: Used in collaborative robots (cobots) and other industrial automation equipment.

Q & A

  1. What is the part number of this MOSFET?
    The part number is PSMN4R0-40YS,115.
  2. Who is the manufacturer of this component?
    The manufacturer is Nexperia USA Inc.
  3. What is the package type of this MOSFET?
    The package type is LFPAK56, Power-SO8.
  4. What is the maximum drain-source voltage (Vds) of this MOSFET?
    The maximum drain-source voltage is 40 V.
  5. What is the continuous drain current (Id) of this MOSFET?
    The continuous drain current is 100 A (Tc).
  6. Is this MOSFET RoHS compliant?
    Yes, this MOSFET is RoHS compliant.
  7. What are some typical applications of this MOSFET?
    Typical applications include automotive systems, industrial power supplies, renewable energy systems, and robotics.
  8. What is the power dissipation (Pd) of this MOSFET?
    The power dissipation is 106 W (Tc).
  9. Is this MOSFET qualified for automotive use?
    Yes, it is qualified to the AEC-Q100/Q101 standard.
  10. What are the key features of this MOSFET?
    The key features include high current capability, low on-resistance, compact packaging, and automotive qualification.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2410 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):106W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PSMN4R0-40YS,115 PSMN4R0-60YS,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 15A, 10V 4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2410 pF @ 20 V 3501 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 106W (Tc) 130W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669

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