PSMN7R0-60YS,115
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Nexperia USA Inc. PSMN7R0-60YS,115

Manufacturer No:
PSMN7R0-60YS,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 89A LFPAK56
Delivery:
Payment:
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Product Introduction

Overview

The PSMN7R0-60YS,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of the LFPAK package series, known for its compact size and high power density. The MOSFET is designed to operate at high temperatures and is suitable for a variety of applications requiring high current and low on-resistance.

Key Specifications

ParameterValue
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Continuous Drain Current (Id)89 A
On-Resistance (Rds(on))6.4 mΩ @ 10 V, 15 A
Power Dissipation (Pd)117 W
Threshold Voltage (Vth)4 V @ 1 mA
PackageLFPAK (SOT-669)
Operating TemperatureQualified to 150°C or 175°C

Key Features

  • Low on-resistance (Rds(on)) of 6.4 mΩ at 10 V, 15 A, ensuring minimal power loss.
  • High continuous drain current of 89 A, suitable for high-power applications.
  • Compact LFPAK (SOT-669) package, offering high power density in a small footprint.
  • Qualified to operate at high temperatures up to 150°C or 175°C, enhancing reliability in demanding environments.
  • Standard level threshold voltage of 4 V @ 1 mA, making it compatible with a wide range of control signals.

Applications

The PSMN7R0-60YS,115 is versatile and can be used in various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power steering.
  • Industrial control systems and automation.
  • High-frequency switching applications.

Q & A

  1. What is the drain to source voltage (Vdss) of the PSMN7R0-60YS,115?
    The drain to source voltage (Vdss) is 60 V.
  2. What is the continuous drain current (Id) of this MOSFET?
    The continuous drain current (Id) is 89 A.
  3. What is the on-resistance (Rds(on)) of the PSMN7R0-60YS,115?
    The on-resistance (Rds(on)) is 6.4 mΩ at 10 V, 15 A.
  4. What package type is used for the PSMN7R0-60YS,115?
    The package type is LFPAK (SOT-669).
  5. What is the maximum operating temperature for this MOSFET?
    The MOSFET is qualified to operate up to 150°C or 175°C.
  6. What is the threshold voltage (Vth) of the PSMN7R0-60YS,115?
    The threshold voltage (Vth) is 4 V @ 1 mA.
  7. Is the PSMN7R0-60YS,115 RoHS compliant?
    Yes, the PSMN7R0-60YS,115 is RoHS compliant.
  8. What are some common applications for the PSMN7R0-60YS,115?
    Common applications include power supplies, motor control, automotive systems, industrial control systems, and high-frequency switching applications.
  9. What is the power dissipation (Pd) of the PSMN7R0-60YS,115?
    The power dissipation (Pd) is 117 W.
  10. Where can I find detailed specifications for the PSMN7R0-60YS,115?
    Detailed specifications can be found in the datasheet available on the Nexperia website or through distributors like Digi-Key, Mouser, and LCSC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:89A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2712 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):117W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PSMN7R0-60YS,115 PSMN4R0-60YS,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 89A (Tc) 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 6.4mOhm @ 15A, 10V 4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2712 pF @ 30 V 3501 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 117W (Tc) 130W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669

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