PSMN1R2-25YLDX
  • Share:

Nexperia USA Inc. PSMN1R2-25YLDX

Manufacturer No:
PSMN1R2-25YLDX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 25V 100A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN1R2-25YLDX is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This component is part of Nexperia's NextPower technology series, known for its advanced power handling capabilities and efficiency. The MOSFET is packaged in the SC-100, SOT-669 format, making it suitable for a variety of surface mount applications. With its robust specifications, it is designed to handle high current and voltage requirements, making it an ideal choice for power management and switching applications.

Key Specifications

Parameter Value
Manufacturer Nexperia USA Inc.
Part Number PSMN1R2-25YLDX
Package / Case SC-100, SOT-669
Drain to Source Voltage (Vdss) 25V
Continuous Drain Current (ID) 100A (Tc)
On Resistance (Rds On) @ 25A, 10V 1.2 mΩ
Gate Threshold Voltage (Vgs(th)) @ Id 2.2V @ 1mA
Maximum Gate Voltage (Vgs) ±20V
Power Dissipation (Max) 172W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
ROHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Key Features

  • Ultra Low On Resistance: The PSMN1R2-25YLDX features a very low on resistance of 1.2 mΩ at 25A and 10V, enhancing the efficiency of the system.
  • High System Efficiency: With ultra low gate charge (QG), gate-drain charge (QGD), and output charge (QOSS), this MOSFET is optimized for high system efficiency, especially at higher switching frequencies.
  • Avalanche Tested: The MOSFET is 100% avalanche tested at I(AS) = 169 A, ensuring robustness and reliability in demanding applications.
  • Surface Mount Package: The SC-100, SOT-669 package is designed for surface mount applications, offering ease of integration and high reliability.

Applications

  • Power Management: Suitable for high-power DC-DC converters, power supplies, and other power management systems.
  • Switching Applications: Ideal for high-frequency switching applications due to its low on resistance and high system efficiency.
  • Automotive Systems: Can be used in automotive systems requiring high current and voltage handling capabilities.
  • Industrial Power Systems: Applicable in industrial power systems, motor control, and other high-power applications.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the PSMN1R2-25YLDX?

    The maximum drain to source voltage (Vdss) is 25V.

  2. What is the continuous drain current (ID) of the PSMN1R2-25YLDX?

    The continuous drain current (ID) is 100A (Tc).

  3. What is the on resistance (Rds On) of the PSMN1R2-25YLDX at 25A and 10V?

    The on resistance (Rds On) is 1.2 mΩ at 25A and 10V.

  4. Is the PSMN1R2-25YLDX ROHS compliant?

    Yes, the PSMN1R2-25YLDX is ROHS3 compliant.

  5. What is the operating temperature range of the PSMN1R2-25YLDX?

    The operating temperature range is -55°C ~ 175°C (TJ).

  6. What is the maximum gate voltage (Vgs) for the PSMN1R2-25YLDX?

    The maximum gate voltage (Vgs) is ±20V.

  7. What is the power dissipation (Max) of the PSMN1R2-25YLDX?

    The power dissipation (Max) is 172W (Tc).

  8. Is the PSMN1R2-25YLDX suitable for high-frequency switching applications?

    Yes, it is suitable due to its low on resistance and high system efficiency.

  9. What is the moisture sensitivity level (MSL) of the PSMN1R2-25YLDX?

    The moisture sensitivity level (MSL) is 1 (Unlimited).

  10. Is the PSMN1R2-25YLDX avalanche tested?

    Yes, it is 100% avalanche tested at I(AS) = 169 A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:60.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4327 pF @ 12 V
FET Feature:Schottky Diode (Body)
Power Dissipation (Max):172W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

$1.73
419

Please send RFQ , we will respond immediately.

Similar Products

Part Number PSMN1R2-25YLDX PSMN1R7-25YLDX PSMN1R0-25YLDX
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 25A, 10V 1.7mOhm @ 25A, 10V 0.89mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA 2.2V @ 1mA 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 60.3 nC @ 10 V 46.7 nC @ 10 V 71.8 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4327 pF @ 12 V 3415 pF @ 12 V 5308 pF @ 12 V
FET Feature Schottky Diode (Body) Schottky Diode (Body) Schottky Diode (Body)
Power Dissipation (Max) 172W (Tc) 135W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

Related Product By Categories

2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

PESD24VS5UD,115
PESD24VS5UD,115
Nexperia USA Inc.
TVS DIODE 24VWM 52VC 6TSOP
PMEG2010BEA,115
PMEG2010BEA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
BZX84-B10/DG/B3215
BZX84-B10/DG/B3215
Nexperia USA Inc.
DIODE ZENER
BC807-16HR
BC807-16HR
Nexperia USA Inc.
BC807-16H/SOT23/TO-236AB
PBSS304NXZ
PBSS304NXZ
Nexperia USA Inc.
PBSS304NX/SOT89/MPT3
BC857CQBZ
BC857CQBZ
Nexperia USA Inc.
TRANS 45V 0.1A DFN1110D-3
PDTC144EU,115
PDTC144EU,115
Nexperia USA Inc.
TRANS PREBIAS NPN 50V SOT323
PSMN1R4-30YLD/1X
PSMN1R4-30YLD/1X
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY
74HC1G66GW-Q100H
74HC1G66GW-Q100H
Nexperia USA Inc.
IC ANLG SWITCH SPST 5TSSOP
74AHC273PW,112
74AHC273PW,112
Nexperia USA Inc.
IC FF D-TYPE SNGL 8BIT 20TSSOP
74LVC1G11GW,125
74LVC1G11GW,125
Nexperia USA Inc.
IC GATE AND 1CH 3-INP 6TSSOP
74LVC00AD-Q100J
74LVC00AD-Q100J
Nexperia USA Inc.
IC GATE NAND 4CH 2-INP 14SO