PSMN1R2-25YLDX
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Nexperia USA Inc. PSMN1R2-25YLDX

Manufacturer No:
PSMN1R2-25YLDX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 25V 100A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The PSMN1R2-25YLDX is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This component is part of Nexperia's NextPower technology series, known for its advanced power handling capabilities and efficiency. The MOSFET is packaged in the SC-100, SOT-669 format, making it suitable for a variety of surface mount applications. With its robust specifications, it is designed to handle high current and voltage requirements, making it an ideal choice for power management and switching applications.

Key Specifications

Parameter Value
Manufacturer Nexperia USA Inc.
Part Number PSMN1R2-25YLDX
Package / Case SC-100, SOT-669
Drain to Source Voltage (Vdss) 25V
Continuous Drain Current (ID) 100A (Tc)
On Resistance (Rds On) @ 25A, 10V 1.2 mΩ
Gate Threshold Voltage (Vgs(th)) @ Id 2.2V @ 1mA
Maximum Gate Voltage (Vgs) ±20V
Power Dissipation (Max) 172W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
ROHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Key Features

  • Ultra Low On Resistance: The PSMN1R2-25YLDX features a very low on resistance of 1.2 mΩ at 25A and 10V, enhancing the efficiency of the system.
  • High System Efficiency: With ultra low gate charge (QG), gate-drain charge (QGD), and output charge (QOSS), this MOSFET is optimized for high system efficiency, especially at higher switching frequencies.
  • Avalanche Tested: The MOSFET is 100% avalanche tested at I(AS) = 169 A, ensuring robustness and reliability in demanding applications.
  • Surface Mount Package: The SC-100, SOT-669 package is designed for surface mount applications, offering ease of integration and high reliability.

Applications

  • Power Management: Suitable for high-power DC-DC converters, power supplies, and other power management systems.
  • Switching Applications: Ideal for high-frequency switching applications due to its low on resistance and high system efficiency.
  • Automotive Systems: Can be used in automotive systems requiring high current and voltage handling capabilities.
  • Industrial Power Systems: Applicable in industrial power systems, motor control, and other high-power applications.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the PSMN1R2-25YLDX?

    The maximum drain to source voltage (Vdss) is 25V.

  2. What is the continuous drain current (ID) of the PSMN1R2-25YLDX?

    The continuous drain current (ID) is 100A (Tc).

  3. What is the on resistance (Rds On) of the PSMN1R2-25YLDX at 25A and 10V?

    The on resistance (Rds On) is 1.2 mΩ at 25A and 10V.

  4. Is the PSMN1R2-25YLDX ROHS compliant?

    Yes, the PSMN1R2-25YLDX is ROHS3 compliant.

  5. What is the operating temperature range of the PSMN1R2-25YLDX?

    The operating temperature range is -55°C ~ 175°C (TJ).

  6. What is the maximum gate voltage (Vgs) for the PSMN1R2-25YLDX?

    The maximum gate voltage (Vgs) is ±20V.

  7. What is the power dissipation (Max) of the PSMN1R2-25YLDX?

    The power dissipation (Max) is 172W (Tc).

  8. Is the PSMN1R2-25YLDX suitable for high-frequency switching applications?

    Yes, it is suitable due to its low on resistance and high system efficiency.

  9. What is the moisture sensitivity level (MSL) of the PSMN1R2-25YLDX?

    The moisture sensitivity level (MSL) is 1 (Unlimited).

  10. Is the PSMN1R2-25YLDX avalanche tested?

    Yes, it is 100% avalanche tested at I(AS) = 169 A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:60.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4327 pF @ 12 V
FET Feature:Schottky Diode (Body)
Power Dissipation (Max):172W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PSMN1R2-25YLDX PSMN1R7-25YLDX PSMN1R0-25YLDX
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 25A, 10V 1.7mOhm @ 25A, 10V 0.89mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA 2.2V @ 1mA 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 60.3 nC @ 10 V 46.7 nC @ 10 V 71.8 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4327 pF @ 12 V 3415 pF @ 12 V 5308 pF @ 12 V
FET Feature Schottky Diode (Body) Schottky Diode (Body) Schottky Diode (Body)
Power Dissipation (Max) 172W (Tc) 135W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

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