Overview
The PSMN1R0-30YLD/1X is a high-performance N-channel enhancement mode MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's NextPowerS3 portfolio, which utilizes advanced technology to offer superior efficiency and reliability. The MOSFET is housed in the LFPAK56 (Power-SO8) package, making it suitable for a wide range of applications requiring high current handling and low on-state resistance.
Key Specifications
| Parameter | Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|
| VDS (Drain-Source Voltage) | 25 °C ≤ Tj ≤ 175 °C | - | - | 30 | V |
| VGS (Gate-Source Voltage) | - | -20 | - | 20 | V |
| RDSon @ VGS = 10 V | ID = 25 A; Tj = 25 °C | - | 1.02 | 1.3 | mΩ |
| RDSon @ VGS = 4.5 V | ID = 25 A; Tj = 25 °C | - | 1.3 | - | mΩ |
| Tj (Junction Temperature) | - | -55 | - | 175 | °C |
| ID (Drain Current) | VGS = 10 V; Tmb = 25 °C | - | - | 300 | A |
| QGD (Gate-Drain Charge) | ID = 25 A; VDS = 15 V; VGS = 4.5 V | - | 10.9 | 16.35 | nC |
| QG(tot) @ VGS = 4.5 V | ID = 25 A; VDS = 15 V | - | 38.2 | 57.3 | nC |
| Ptot (Total Power Dissipation) | Tmb = 25 °C | - | - | 238 | W |
Key Features
- High Current Capability: The PSMN1R0-30YLD/1X can handle up to 300 A of continuous current, making it suitable for high-power applications.
- Low On-State Resistance: With a maximum RDSon of 1.3 mΩ at VGS = 4.5 V, this MOSFET minimizes power losses and enhances system efficiency.
- Ultra Low QG, QGD, and QOSS: These characteristics contribute to high system efficiency, especially in applications requiring fast switching.
- Avalanche Rated: The device is 100% tested at Ias = 190 A, ensuring robustness against transient conditions.
- Wide Operating Temperature Range: The MOSFET operates from -55 °C to 175 °C, making it versatile for various environmental conditions.
Applications
- Automotive Systems: Suitable for high-power automotive applications such as electric vehicles, battery management systems, and power steering.
- Industrial Power Systems: Used in industrial power supplies, motor drives, and other high-current applications.
- Consumer Electronics: Applicable in high-power consumer electronics such as power adapters, battery chargers, and gaming consoles.
- Renewable Energy Systems: Can be used in solar and wind power systems for efficient power conversion.
Q & A
- What is the maximum drain current of the PSMN1R0-30YLD/1X MOSFET?
The maximum drain current is 300 A at VGS = 10 V and Tmb = 25 °C.
- What is the maximum on-state resistance (RDSon) of this MOSFET?
The maximum RDSon is 1.3 mΩ at VGS = 4.5 V and Tj = 25 °C.
- What is the operating temperature range of the PSMN1R0-30YLD/1X?
The operating temperature range is from -55 °C to 175 °C.
- What package type is used for the PSMN1R0-30YLD/1X MOSFET?
The MOSFET is housed in the LFPAK56 (Power-SO8) package.
- Is the PSMN1R0-30YLD/1X avalanche rated?
Yes, the device is 100% tested at Ias = 190 A, indicating it is avalanche rated.
- What are the typical gate-drain and total gate charges for this MOSFET?
The typical QGD is 10.9 nC, and the typical QG(tot) at VGS = 4.5 V is 38.2 nC.
- What is the maximum total power dissipation for the PSMN1R0-30YLD/1X?
The maximum total power dissipation is 238 W at Tmb = 25 °C.
- Is the PSMN1R0-30YLD/1X suitable for automotive applications?
Yes, it is suitable for high-power automotive applications due to its robust specifications and wide operating temperature range.
- How can I obtain samples of the PSMN1R0-30YLD/1X?
Samples can be ordered through Nexperia's sales organization or through their network of global and regional distributors.
- What are the key benefits of using Nexperia's NextPowerS3 technology in the PSMN1R0-30YLD/1X?
The key benefits include ultra-low QG, QGD, and QOSS, which enhance system efficiency, especially in fast-switching applications.
