Overview
The PSMN130-200D,118-NEX is an N-channel TrenchMOS SiliconMAX standard level MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Nexperia USA Inc. This device is designed for high-efficiency and fast-switching applications, making it suitable for a wide range of electronic circuits. The MOSFET features low on-resistance, high current handling capability, and robust thermal performance, ensuring reliability and efficiency in various power management and control systems.
Key Specifications
| Parameter | Value |
|---|---|
| Drain to Source Voltage (Vdss) | 130 V |
| Continuous Drain Current (Id) @ 25°C | 200 A (Tc) |
| On-Resistance (R_DS(on)) | 130 mΩ @ 25 A, 10 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2470 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Power Dissipation (Max) | 150 W (Tc) |
| Vgs (Max) | ±20 V |
| Vgs(th) (Max) @ Id | 4 V @ 1 mA |
Key Features
- Low on-resistance (R_DS(on)) of 130 mΩ @ 25 A, 10 V for high efficiency.
- High current handling capability of up to 200 A.
- Fast switching performance.
- Surface mount package (TO-252-3, DPak) for easy integration.
- Wide operating temperature range from -55°C to 175°C.
- High power dissipation of up to 150 W.
Applications
- Switching Power Supplies
- Motor Control Circuits
- Power Amplifiers
- Load Switches
- Lighting Systems
- Battery Protection Circuits
- Solar Inverters and Renewable Energy Systems
- Inverters and Uninterruptible Power Supplies (UPS)
- Automotive Electronics
Q & A
- What is the maximum drain-source voltage of the PSMN130-200D,118-NEX MOSFET?
The maximum drain-source voltage is 130 V. - What is the continuous drain current rating of this MOSFET at 25°C?
The continuous drain current rating is 200 A (Tc). - What is the on-resistance (R_DS(on)) of the PSMN130-200D,118-NEX?
The on-resistance is 130 mΩ @ 25 A, 10 V. - What is the gate charge (Qg) of this MOSFET?
The gate charge is 65 nC @ 10 V. - What is the operating temperature range of the PSMN130-200D,118-NEX?
The operating temperature range is from -55°C to 175°C (TJ). - What are the common applications of the PSMN130-200D,118-NEX MOSFET?
Common applications include switching power supplies, motor control circuits, power amplifiers, load switches, lighting systems, battery protection circuits, solar inverters, and automotive electronics. - What is the package type of the PSMN130-200D,118-NEX?
The package type is TO-252-3, DPak (2 Leads + Tab), SC-63. - What is the maximum power dissipation of this MOSFET?
The maximum power dissipation is 150 W (Tc). - What is the maximum gate-source voltage (Vgs) for the PSMN130-200D,118-NEX?
The maximum gate-source voltage is ±20 V. - Is the PSMN130-200D,118-NEX suitable for high-efficiency applications?
Yes, it is designed for high-efficiency and fast-switching applications.
