PSMN0R9-25YLC,115
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Nexperia USA Inc. PSMN0R9-25YLC,115

Manufacturer No:
PSMN0R9-25YLC,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 25V 100A LFPAK56
Delivery:
Payment:
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Product Introduction

Overview

The PSMN0R9-25YLC,115 is a high-performance N-channel MOSFET transistor manufactured by Nexperia USA Inc. This device is designed for a wide range of power management and control applications, offering excellent efficiency, thermal performance, and reliability.

It features NextPower Superjunction technology, which optimizes it for 4.5V gate drive and provides ultra-low gate charge (QG). The MOSFET is available in Power-SO8 and LFPAK56 package options, making it suitable for various high-reliability applications.

Key Specifications

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 25 V
Gate-to-Source Voltage (Vgs) ±20 V
Threshold Voltage (Vgs(th)) 1.95 @ 1mA V
Drain Current (Id) 100 (Tc) A
On-Resistance (Rds(on)) 0.99mΩ @ 25A, 10V
Input Capacitance 6775pF @ 12V pF
Power Dissipation 272W (Tc) W
Operating Temperature Range -55°C to 175°C °C
Package Options Power-SO8, LFPAK56
RoHS Compliance RoHS3 Compliant

Key Features

  • High current capability up to 100A (Tc)
  • Low on-resistance down to 0.99mΩ @ 25A, 10V
  • Fast switching performance
  • Wide operating temperature range from -55°C to 175°C
  • Low input capacitance of 6775pF @ 12V
  • High power dissipation up to 272W (Tc)
  • Compact and space-saving design
  • Optimized for 4.5V gate drive using NextPower Superjunction technology
  • Ultra-low gate charge (QG)

Applications

  • Power management circuits
  • Motor drives
  • Switching power supplies
  • Industrial electronics
  • Automotive electronics

Q & A

  1. What is the maximum drain-to-source voltage (Vdss) of the PSMN0R9-25YLC,115?

    The maximum drain-to-source voltage (Vdss) is 25V.

  2. What are the package options available for this MOSFET?

    The MOSFET is available in Power-SO8 and LFPAK56 package options.

  3. What is the on-resistance (Rds(on)) of this MOSFET at 25A and 10V?

    The on-resistance (Rds(on)) is 0.99mΩ @ 25A, 10V.

  4. What is the operating temperature range of the PSMN0R9-25YLC,115?

    The operating temperature range is from -55°C to 175°C.

  5. Is the PSMN0R9-25YLC,115 RoHS compliant?

    Yes, it is RoHS3 compliant.

  6. What are some of the key applications for this MOSFET?

    Key applications include power management circuits, motor drives, switching power supplies, industrial electronics, and automotive electronics.

  7. What technology is used in this MOSFET?

    The MOSFET uses NextPower Superjunction technology.

  8. What is the maximum power dissipation of the PSMN0R9-25YLC,115?

    The maximum power dissipation is up to 272W (Tc).

  9. What is the input capacitance of the PSMN0R9-25YLC,115 at 12V?

    The input capacitance is 6775pF @ 12V.

  10. Is the PSMN0R9-25YLC,115 suitable for high-reliability applications?

    Yes, it is suitable for high-reliability applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.99mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6775 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):272W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PSMN0R9-25YLC,115 PSMN2R9-25YLC,115 PSMN1R9-25YLC,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.99mOhm @ 25A, 10V 3.15mOhm @ 25A, 10V 2.05mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA 1.95V @ 1mA 1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 33 nC @ 10 V 57 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6775 pF @ 12 V 2083 pF @ 12 V 3504 pF @ 12 V
FET Feature - - -
Power Dissipation (Max) 272W (Tc) 92W (Tc) 141W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

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