PSMN025-100D,118
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Nexperia USA Inc. PSMN025-100D,118

Manufacturer No:
PSMN025-100D,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 47A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN025-100D,118 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is designed to offer high efficiency and reliability in various power management applications. It features advanced trench technology, which enhances its switching performance and reduces power losses. The MOSFET is packaged in a TO-220 package, making it suitable for a wide range of industrial and consumer electronics.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
VGS (Gate-Source Voltage)±20 V
ID (Continuous Drain Current)25 A
RDS(on) (On-State Drain-Source Resistance)18 mΩ (typical at VGS = 10 V)
PD (Power Dissipation)150 W
TJ (Junction Temperature)-55 to 150 °C
PackageTO-220

Key Features

  • High efficiency due to low on-state resistance (RDS(on))
  • Advanced trench technology for improved switching performance
  • High continuous drain current (ID) of 25 A
  • Wide operating temperature range (-55 to 150 °C)
  • Robust TO-220 package for reliable mounting and heat dissipation

Applications

The PSMN025-100D,118 MOSFET is suitable for various applications including:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial automation and control systems
  • Consumer electronics such as power tools and appliances
  • Automotive systems requiring high reliability and efficiency

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PSMN025-100D,118 MOSFET?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the typical on-state drain-source resistance (RDS(on)) of this MOSFET?
    The typical on-state drain-source resistance (RDS(on)) is 18 mΩ at VGS = 10 V.
  3. What is the continuous drain current (ID) rating of this device?
    The continuous drain current (ID) rating is 25 A.
  4. What is the operating junction temperature range of the PSMN025-100D,118?
    The operating junction temperature range is -55 to 150 °C.
  5. In what package is the PSMN025-100D,118 MOSFET available?
    The MOSFET is available in a TO-220 package.
  6. What are some common applications for this MOSFET?
    Common applications include power supplies, DC-DC converters, motor control, industrial automation, consumer electronics, and automotive systems.
  7. What is the significance of the '118' suffix in the part number?
    The '118' suffix indicates the packaging type and is part of the complete manufacturer part number for ordering purposes.
  8. Where can I find detailed specifications and datasheets for the PSMN025-100D,118?
    Detailed specifications and datasheets can be found on websites such as Digi-Key, Mouser Electronics, and the official Nexperia website.
  9. What is the power dissipation (PD) rating of this MOSFET?
    The power dissipation (PD) rating is 150 W.
  10. Is the PSMN025-100D,118 suitable for high-frequency switching applications?
    Yes, due to its advanced trench technology and low on-state resistance, it is suitable for high-frequency switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:47A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:25mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:61 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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