PSMN020-100YS,115
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Nexperia USA Inc. PSMN020-100YS,115

Manufacturer No:
PSMN020-100YS,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 43A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN020-100YS,115 is a high-performance N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is designed using TrenchMOS technology and is housed in the LFPAK56E package, which is also known as the SOT-669-5 package. It is optimized for high-frequency applications and offers low thermal resistance, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)100 V
Continuous Drain Current (Id)43 A (at Tc)
On-State Resistance (Rds(on))20.5 mΩ @ 10 V, 15 A
Power Dissipation (Pd)106 W (at Tc)
Gate Threshold Voltage (Vgs(th))1-4 V @ 1 mA
Package TypeLFPAK56E (SOT-669-5)
Mounting StyleSMD/SMT
Storage Temperature Range-55 to 175 °C
Junction Temperature Range-55 to 175 °C
Peak Soldering Temperature260 °C

Key Features

  • Higher operating power due to low thermal resistance.
  • Suitable for high-frequency applications due to fast switching characteristics.
  • Low Q (charge) for higher efficiency and lower spiking.
  • Based on Trench 14 low ohmic split-gate technology.

Applications

  • Class D amplifiers.
  • DC-to-DC converters.
  • Motion control.
  • Switched-mode power supplies.

Q & A

  1. What is the voltage rating of the PSMN020-100YS,115 MOSFET?
    The voltage rating (Vds) of the PSMN020-100YS,115 MOSFET is 100 V.
  2. What is the continuous drain current of the PSMN020-100YS,115 MOSFET?
    The continuous drain current (Id) of the PSMN020-100YS,115 MOSFET is 43 A at Tc.
  3. What is the on-state resistance of the PSMN020-100YS,115 MOSFET?
    The on-state resistance (Rds(on)) of the PSMN020-100YS,115 MOSFET is 20.5 mΩ @ 10 V, 15 A.
  4. What is the power dissipation of the PSMN020-100YS,115 MOSFET?
    The power dissipation (Pd) of the PSMN020-100YS,115 MOSFET is 106 W at Tc.
  5. What is the gate threshold voltage of the PSMN020-100YS,115 MOSFET?
    The gate threshold voltage (Vgs(th)) of the PSMN020-100YS,115 MOSFET is 1-4 V @ 1 mA.
  6. What package type is the PSMN020-100YS,115 MOSFET housed in?
    The PSMN020-100YS,115 MOSFET is housed in the LFPAK56E (SOT-669-5) package.
  7. What are the typical applications of the PSMN020-100YS,115 MOSFET?
    The PSMN020-100YS,115 MOSFET is typically used in Class D amplifiers, DC-to-DC converters, motion control, and switched-mode power supplies.
  8. What technology is used in the PSMN020-100YS,115 MOSFET?
    The PSMN020-100YS,115 MOSFET is based on Trench 14 low ohmic split-gate technology.
  9. What is the storage temperature range of the PSMN020-100YS,115 MOSFET?
    The storage temperature range of the PSMN020-100YS,115 MOSFET is -55 to 175 °C.
  10. What is the peak soldering temperature of the PSMN020-100YS,115 MOSFET?
    The peak soldering temperature of the PSMN020-100YS,115 MOSFET is 260 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:43A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:20.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2210 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):106W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PSMN020-100YS,115 PSMN028-100YS,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 43A (Tc) 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 20.5mOhm @ 15A, 10V 27.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V 33 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2210 pF @ 50 V 1634 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 106W (Tc) 89W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669

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