Overview
The PSMN028-100YS,115 is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's Trench 14 low ohmic split-gate technology family, known for its low on-resistance and high efficiency. The MOSFET is housed in the LFPAK56E package, which is designed for surface mount applications and offers excellent thermal performance.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Polarity | N Channel |
| Continuous Drain Current (Id) | 42A |
| Drain Source Voltage (Vds) | 100V |
| On Resistance (Rds(on)) | 0.0214 ohm (at Vgs = 10V) |
| Threshold Voltage (Vgs(th)) | 3V (typical), 4V (maximum) at Id = 1mA |
| Power Dissipation (Pd) | 89W (at Tc) |
| Gate Charge (Qg) | 33nC (at Vgs = 10V) |
| Input Capacitance (Ciss) | 1634pF (at Vds = 50V) |
| Maximum Gate Voltage (Vgs) | ±20V |
| Operating Temperature Range | -55°C to +175°C |
| Package / Case | LFPAK56, Power-SO8 (SOT-669) |
| No. of Pins | 5-Pin (4+Tab) |
Key Features
- Low on-resistance (Rds(on)) of 0.0214 ohm, ensuring minimal power loss.
- High continuous drain current (Id) of 42A, suitable for high-power applications.
- High drain source voltage (Vds) of 100V, providing robust voltage handling.
- Low gate charge (Qg) of 33nC, enhancing switching efficiency.
- Wide operating temperature range from -55°C to +175°C, making it suitable for various environmental conditions.
- Surface mount LFPAK56E package for excellent thermal performance and ease of mounting.
Applications
The PSMN028-100YS,115 MOSFET is ideal for a variety of high-power applications, including but not limited to:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Automotive systems, such as battery management and power steering.
- Industrial power management and control systems.
- High-efficiency switching applications requiring low on-resistance and fast switching times.
Q & A
- What is the continuous drain current of the PSMN028-100YS,115 MOSFET?
The continuous drain current (Id) is 42A at 25°C. - What is the maximum drain source voltage (Vds) of this MOSFET?
The maximum drain source voltage (Vds) is 100V. - What is the on-resistance (Rds(on)) of the PSMN028-100YS,115?
The on-resistance (Rds(on)) is 0.0214 ohm at Vgs = 10V. - What is the threshold voltage (Vgs(th)) of this MOSFET?
The threshold voltage (Vgs(th)) is typically 3V and a maximum of 4V at Id = 1mA. - What is the power dissipation (Pd) of the PSMN028-100YS,115?
The power dissipation (Pd) is 89W at Tc. - What is the operating temperature range of this MOSFET?
The operating temperature range is from -55°C to +175°C. - What package type is used for the PSMN028-100YS,115?
The MOSFET is housed in the LFPAK56E package (SOT-669). - Is the PSMN028-100YS,115 RoHS compliant?
This part has not been flagged as RoHS compliant. - Where can I find additional datasheets and specifications for the PSMN028-100YS,115?
Additional datasheets, footprints, and schematics can be found on the part details page of authorized distributors like Newark Electronics, Avnet America, and others. - What are some typical applications for the PSMN028-100YS,115 MOSFET?
Typical applications include power supplies, DC-DC converters, motor control systems, automotive systems, and industrial power management.
