PSMN015-60BS,118
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Nexperia USA Inc. PSMN015-60BS,118

Manufacturer No:
PSMN015-60BS,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 50A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The PSMN015-60BS,118 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is designed to offer superior power handling and efficiency, making it suitable for a wide range of industrial and power applications. The MOSFET features a standard level gate and is packaged in a D2PAK (TO-263) surface mount configuration, which is ROHS compliant.

Key Specifications

ParameterValue
Channel TypeN-Channel
Drain-Source Breakdown Voltage (Vds)60 V
Continuous Drain Current (ID)50 A
On-State Resistance (Rds(on))14.8 mΩ @ 10 V
Avalanche Energy Rating (Eas)44 mJ
Turn-Off Delay Time27 ns
Turn-On Delay Time12 ns
Package TypeD2PAK (TO-263)
Power Dissipation (Pd)86 W

Key Features

  • High continuous drain current of 50 A, making it suitable for high-power applications.
  • Low on-state resistance of 14.8 mΩ, reducing power losses and improving efficiency.
  • Avalanche energy rating of 44 mJ, enhancing reliability under transient conditions.
  • Fast switching times with a turn-off delay of 27 ns and turn-on delay of 12 ns.
  • ROHS compliant and packaged in a D2PAK (TO-263) surface mount configuration for easy integration.

Applications

  • Lighting systems
  • Uninterruptible Power Supplies (UPS)
  • AC-DC Power Supplies
  • Synchronous Rectification for ATX, server, and telecom power supplies
  • Motor drives and power tools
  • Micro Solar Inverters
  • DC/DC converters

Q & A

  1. What is the drain-source breakdown voltage of the PSMN015-60BS,118 MOSFET?
    The drain-source breakdown voltage is 60 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current rating is 50 A.
  3. What is the on-state resistance of the PSMN015-60BS,118?
    The on-state resistance is 14.8 mΩ at 10 V.
  4. What is the avalanche energy rating of this MOSFET?
    The avalanche energy rating is 44 mJ.
  5. What is the turn-off delay time of the PSMN015-60BS,118?
    The turn-off delay time is 27 ns.
  6. What package type is used for the PSMN015-60BS,118?
    The package type is D2PAK (TO-263).
  7. Is the PSMN015-60BS,118 ROHS compliant?
    Yes, it is ROHS compliant.
  8. What are some common applications of the PSMN015-60BS,118 MOSFET?
    Common applications include lighting systems, UPS, AC-DC power supplies, synchronous rectification, motor drives, and DC/DC converters.
  9. What is the power dissipation rating of the PSMN015-60BS,118?
    The power dissipation rating is 86 W.
  10. What is the significance of the low on-state resistance in this MOSFET?
    The low on-state resistance reduces power losses and improves the overall efficiency of the system.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:20.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1220 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):86W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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