English
PMZB290UNE2YL
  • Share:

Nexperia USA Inc. PMZB290UNE2YL

Manufacturer No:
PMZB290UNE2YL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 1.2A DFN1006B-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMZB290UNE2YL is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is designed for a wide range of applications requiring low on-resistance and high current handling. The PMZB290UNE2YL is packaged in a compact XQFN3 package, making it suitable for space-constrained designs.

Key Specifications

ParameterValue
VDS (Max)20 V
ID (Max)1.2 A
RDS(on) (Max) @ VGS = 4.5 V0.27 Ω
VGS(th)700 mV
PackageXQFN3
RoHS CompliantYes

Key Features

  • Low on-resistance (RDS(on)) of 0.27 Ω at VGS = 4.5 V, ensuring minimal power loss.
  • High current handling capability of up to 1.2 A.
  • Compact XQFN3 package, ideal for space-constrained designs.
  • Low threshold voltage (VGS(th)) of 700 mV, facilitating easy switching.
  • RoHS compliant, making it suitable for environmentally friendly designs.

Applications

  • Power management in portable electronics such as smartphones and tablets.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Audio amplifiers and other high-current applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMZB290UNE2YL?
    The maximum drain-source voltage (VDS) is 20 V.
  2. What is the maximum continuous drain current (ID) of the PMZB290UNE2YL?
    The maximum continuous drain current (ID) is 1.2 A.
  3. What is the on-resistance (RDS(on)) of the PMZB290UNE2YL at VGS = 4.5 V?
    The on-resistance (RDS(on)) at VGS = 4.5 V is 0.27 Ω.
  4. What is the threshold voltage (VGS(th)) of the PMZB290UNE2YL?
    The threshold voltage (VGS(th)) is 700 mV.
  5. What package type is used for the PMZB290UNE2YL?
    The PMZB290UNE2YL is packaged in an XQFN3 package.
  6. Is the PMZB290UNE2YL RoHS compliant?
    Yes, the PMZB290UNE2YL is RoHS compliant.
  7. What are some typical applications for the PMZB290UNE2YL?
    Typical applications include power management in portable electronics, DC-DC converters, motor control, and audio amplifiers.
  8. How does the compact XQFN3 package benefit the design?
    The compact XQFN3 package is ideal for space-constrained designs, allowing for more efficient use of board space.
  9. What is the significance of the low on-resistance (RDS(on))?
    The low on-resistance minimizes power loss, improving overall efficiency in power management applications.
  10. Can the PMZB290UNE2YL be used in high-current applications?
    Yes, the PMZB290UNE2YL can handle high currents up to 1.2 A, making it suitable for high-current applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:320mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.4 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:46 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta), 5.43W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1006B-3
Package / Case:3-XFDFN
0 Remaining View Similar

In Stock

$0.36
2,233

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMZB290UNE2YL PMZ290UNE2YL
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta) 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 320mOhm @ 1.2A, 4.5V 320mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 4.5 V 1.4 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 46 pF @ 10 V 46 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 350mW (Ta), 5.43W (Tc) 350mW (Ta), 5.43W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN1006B-3 SOT-883
Package / Case 3-XFDFN SC-101, SOT-883

Related Product By Categories

VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247

Related Product By Brand

BAT854CW,115
BAT854CW,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT323
BAS40-07,215
BAS40-07,215
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT143B
1PS79SB40,699
1PS79SB40,699
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD523
PMEG4005EJF
PMEG4005EJF
Nexperia USA Inc.
PMEG4005EJ/SOD323/SOD2
PDZ6.2B,115
PDZ6.2B,115
Nexperia USA Inc.
DIODE ZENER 6.2V 400MW SOD323
PBSS4540Z,115
PBSS4540Z,115
Nexperia USA Inc.
TRANS NPN 40V 5A SOT223
BC869,115
BC869,115
Nexperia USA Inc.
TRANS PNP 20V 1A SOT89
PMPB20ENZ
PMPB20ENZ
Nexperia USA Inc.
MOSFET N-CH 30V 7.2A DFN2020MD-6
HEF4067BT,652
HEF4067BT,652
Nexperia USA Inc.
IC MUX/DEMUX 4X16 24SOIC
74LV4060PW-Q100J
74LV4060PW-Q100J
Nexperia USA Inc.
IC COUNTER 14STAGE BIN 16TSSOP
74HCT04PW,118
74HCT04PW,118
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14TSSOP
74HC165D-Q100,118
74HC165D-Q100,118
Nexperia USA Inc.
IC SHIFT REGISTER 8BIT 16SOIC