PMZB290UNE2YL
  • Share:

Nexperia USA Inc. PMZB290UNE2YL

Manufacturer No:
PMZB290UNE2YL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 1.2A DFN1006B-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMZB290UNE2YL is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is designed for a wide range of applications requiring low on-resistance and high current handling. The PMZB290UNE2YL is packaged in a compact XQFN3 package, making it suitable for space-constrained designs.

Key Specifications

ParameterValue
VDS (Max)20 V
ID (Max)1.2 A
RDS(on) (Max) @ VGS = 4.5 V0.27 Ω
VGS(th)700 mV
PackageXQFN3
RoHS CompliantYes

Key Features

  • Low on-resistance (RDS(on)) of 0.27 Ω at VGS = 4.5 V, ensuring minimal power loss.
  • High current handling capability of up to 1.2 A.
  • Compact XQFN3 package, ideal for space-constrained designs.
  • Low threshold voltage (VGS(th)) of 700 mV, facilitating easy switching.
  • RoHS compliant, making it suitable for environmentally friendly designs.

Applications

  • Power management in portable electronics such as smartphones and tablets.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Audio amplifiers and other high-current applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMZB290UNE2YL?
    The maximum drain-source voltage (VDS) is 20 V.
  2. What is the maximum continuous drain current (ID) of the PMZB290UNE2YL?
    The maximum continuous drain current (ID) is 1.2 A.
  3. What is the on-resistance (RDS(on)) of the PMZB290UNE2YL at VGS = 4.5 V?
    The on-resistance (RDS(on)) at VGS = 4.5 V is 0.27 Ω.
  4. What is the threshold voltage (VGS(th)) of the PMZB290UNE2YL?
    The threshold voltage (VGS(th)) is 700 mV.
  5. What package type is used for the PMZB290UNE2YL?
    The PMZB290UNE2YL is packaged in an XQFN3 package.
  6. Is the PMZB290UNE2YL RoHS compliant?
    Yes, the PMZB290UNE2YL is RoHS compliant.
  7. What are some typical applications for the PMZB290UNE2YL?
    Typical applications include power management in portable electronics, DC-DC converters, motor control, and audio amplifiers.
  8. How does the compact XQFN3 package benefit the design?
    The compact XQFN3 package is ideal for space-constrained designs, allowing for more efficient use of board space.
  9. What is the significance of the low on-resistance (RDS(on))?
    The low on-resistance minimizes power loss, improving overall efficiency in power management applications.
  10. Can the PMZB290UNE2YL be used in high-current applications?
    Yes, the PMZB290UNE2YL can handle high currents up to 1.2 A, making it suitable for high-current applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:320mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.4 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:46 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta), 5.43W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1006B-3
Package / Case:3-XFDFN
0 Remaining View Similar

In Stock

$0.36
2,233

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMZB290UNE2YL PMZ290UNE2YL
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta) 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 320mOhm @ 1.2A, 4.5V 320mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 4.5 V 1.4 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 46 pF @ 10 V 46 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 350mW (Ta), 5.43W (Tc) 350mW (Ta), 5.43W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN1006B-3 SOT-883
Package / Case 3-XFDFN SC-101, SOT-883

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23

Related Product By Brand

PTVS8V5S1UR,115
PTVS8V5S1UR,115
Nexperia USA Inc.
TVS DIODE 8.5VWM 14.4VC CFP3
PDZ27BZ
PDZ27BZ
Nexperia USA Inc.
DIODE ZENER 26.86V 400MW SOD323
BZX84-B10/DG/B3215
BZX84-B10/DG/B3215
Nexperia USA Inc.
DIODE ZENER
BZX384-B3V3,115
BZX384-B3V3,115
Nexperia USA Inc.
DIODE ZENER 3.3V 300MW SOD323
BC847QAPNZ
BC847QAPNZ
Nexperia USA Inc.
TRANS NPN/PNP 45V 0.1A 6DFN
PEMH11,315
PEMH11,315
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V SOT666
BC857CQBZ
BC857CQBZ
Nexperia USA Inc.
TRANS 45V 0.1A DFN1110D-3
2N7002CK
2N7002CK
Nexperia USA Inc.
2N7002 - SMALL SIGNAL FIELD-EFFE
PCMF3USB30Z
PCMF3USB30Z
Nexperia USA Inc.
CMC 6LN SMD ESD
74HC3G14DP,125
74HC3G14DP,125
Nexperia USA Inc.
IC INVERT SCHMITT 3CH 3IN 8TSSOP
74HCT373PW,112
74HCT373PW,112
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20TSSOP
CBTD16210DGG,112
CBTD16210DGG,112
Nexperia USA Inc.
IC BUS SWITCH 10 X 1:1 48TSSOP