PMXB65UPEZ
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Nexperia USA Inc. PMXB65UPEZ

Manufacturer No:
PMXB65UPEZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 12V 3.2A DFN1010D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMXB65UPEZ is a P-channel MOSFET manufactured by Nexperia USA Inc. This component utilizes advanced Trench MOSFET technology, offering high performance and efficiency in a compact package. The device is housed in a leadless ultra-small and ultra-thin SMD plastic package, measuring 1.1 × 1.0 × 0.37 mm, making it ideal for space-constrained applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (Vds) -12 V
Drain Current (Id) 3.2 A
Gate-Source Voltage (Vgs) -8 to 10 V
On-State Resistance (Rds(on)) Typically 18 mΩ at Vgs = -4.5 V, Id = -3 A mΩ
Package Type 3-XDFN exposed pad
Package Dimensions 1.1 × 1.0 × 0.37 mm mm

Key Features

  • Trench MOSFET Technology: Offers high performance and efficiency.
  • Compact Package: Leadless ultra-small and ultra-thin SMD plastic package (1.1 × 1.0 × 0.37 mm) suitable for space-constrained applications.
  • Low On-State Resistance: Typically 18 mΩ at Vgs = -4.5 V, Id = -3 A, reducing power losses.
  • Lead-Free and Halogen-Free: Compliant with Nexperia's halogen-free definition, making it environmentally friendly.

Applications

  • Portable Electronics: Ideal for battery-powered devices due to its low power consumption and compact size.
  • Automotive Systems: Suitable for various automotive applications requiring high efficiency and reliability.
  • Industrial Control Systems: Used in industrial control circuits where high performance and compact design are essential.
  • Power Management Systems: Effective in power management circuits requiring low on-state resistance and high efficiency.

Q & A

  1. What is the drain-source voltage rating of the PMXB65UPEZ MOSFET?

    The drain-source voltage (Vds) rating is -12 V.

  2. What is the maximum drain current (Id) of the PMXB65UPEZ?

    The maximum drain current (Id) is 3.2 A.

  3. What is the package type of the PMXB65UPEZ?

    The package type is a 3-XDFN exposed pad.

  4. What are the dimensions of the PMXB65UPEZ package?

    The package dimensions are 1.1 × 1.0 × 0.37 mm.

  5. Does the PMXB65UPEZ use Trench MOSFET technology?

    Yes, it utilizes Trench MOSFET technology for high performance and efficiency.

  6. Is the PMXB65UPEZ lead-free and halogen-free?

    Yes, it is lead-free and halogen-free according to Nexperia's halogen-free definition.

  7. What is the typical on-state resistance (Rds(on)) of the PMXB65UPEZ?

    The typical on-state resistance (Rds(on)) is 18 mΩ at Vgs = -4.5 V, Id = -3 A.

  8. In which types of applications is the PMXB65UPEZ commonly used?

    It is commonly used in portable electronics, automotive systems, industrial control systems, and power management systems.

  9. Where can I purchase the PMXB65UPEZ?

    You can purchase the PMXB65UPEZ from various distributors such as Arrow, Avnet, Digi-Key, Mouser Electronics, and more.

  10. What is the significance of the compact package size of the PMXB65UPEZ?

    The compact package size makes it ideal for space-constrained applications, allowing for more efficient use of board space.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:72mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:634 pF @ 6 V
FET Feature:- 
Power Dissipation (Max):317mW (Ta), 8.33W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1010D-3
Package / Case:3-XDFN Exposed Pad
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Similar Products

Part Number PMXB65UPEZ PMXB75UPEZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta) 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 72mOhm @ 3.2A, 4.5V 85mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V 12 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 634 pF @ 6 V 608 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 317mW (Ta), 8.33W (Tc) 317mW (Ta), 8.33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN1010D-3 DFN1010D-3
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad

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