PMXB65UPEZ
  • Share:

Nexperia USA Inc. PMXB65UPEZ

Manufacturer No:
PMXB65UPEZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 12V 3.2A DFN1010D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMXB65UPEZ is a P-channel MOSFET manufactured by Nexperia USA Inc. This component utilizes advanced Trench MOSFET technology, offering high performance and efficiency in a compact package. The device is housed in a leadless ultra-small and ultra-thin SMD plastic package, measuring 1.1 × 1.0 × 0.37 mm, making it ideal for space-constrained applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (Vds) -12 V
Drain Current (Id) 3.2 A
Gate-Source Voltage (Vgs) -8 to 10 V
On-State Resistance (Rds(on)) Typically 18 mΩ at Vgs = -4.5 V, Id = -3 A
Package Type 3-XDFN exposed pad
Package Dimensions 1.1 × 1.0 × 0.37 mm mm

Key Features

  • Trench MOSFET Technology: Offers high performance and efficiency.
  • Compact Package: Leadless ultra-small and ultra-thin SMD plastic package (1.1 × 1.0 × 0.37 mm) suitable for space-constrained applications.
  • Low On-State Resistance: Typically 18 mΩ at Vgs = -4.5 V, Id = -3 A, reducing power losses.
  • Lead-Free and Halogen-Free: Compliant with Nexperia's halogen-free definition, making it environmentally friendly.

Applications

  • Portable Electronics: Ideal for battery-powered devices due to its low power consumption and compact size.
  • Automotive Systems: Suitable for various automotive applications requiring high efficiency and reliability.
  • Industrial Control Systems: Used in industrial control circuits where high performance and compact design are essential.
  • Power Management Systems: Effective in power management circuits requiring low on-state resistance and high efficiency.

Q & A

  1. What is the drain-source voltage rating of the PMXB65UPEZ MOSFET?

    The drain-source voltage (Vds) rating is -12 V.

  2. What is the maximum drain current (Id) of the PMXB65UPEZ?

    The maximum drain current (Id) is 3.2 A.

  3. What is the package type of the PMXB65UPEZ?

    The package type is a 3-XDFN exposed pad.

  4. What are the dimensions of the PMXB65UPEZ package?

    The package dimensions are 1.1 × 1.0 × 0.37 mm.

  5. Does the PMXB65UPEZ use Trench MOSFET technology?

    Yes, it utilizes Trench MOSFET technology for high performance and efficiency.

  6. Is the PMXB65UPEZ lead-free and halogen-free?

    Yes, it is lead-free and halogen-free according to Nexperia's halogen-free definition.

  7. What is the typical on-state resistance (Rds(on)) of the PMXB65UPEZ?

    The typical on-state resistance (Rds(on)) is 18 mΩ at Vgs = -4.5 V, Id = -3 A.

  8. In which types of applications is the PMXB65UPEZ commonly used?

    It is commonly used in portable electronics, automotive systems, industrial control systems, and power management systems.

  9. Where can I purchase the PMXB65UPEZ?

    You can purchase the PMXB65UPEZ from various distributors such as Arrow, Avnet, Digi-Key, Mouser Electronics, and more.

  10. What is the significance of the compact package size of the PMXB65UPEZ?

    The compact package size makes it ideal for space-constrained applications, allowing for more efficient use of board space.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:72mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:634 pF @ 6 V
FET Feature:- 
Power Dissipation (Max):317mW (Ta), 8.33W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1010D-3
Package / Case:3-XDFN Exposed Pad
0 Remaining View Similar

In Stock

$0.49
754

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMXB65UPEZ PMXB75UPEZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta) 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 72mOhm @ 3.2A, 4.5V 85mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V 12 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 634 pF @ 6 V 608 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 317mW (Ta), 8.33W (Tc) 317mW (Ta), 8.33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN1010D-3 DFN1010D-3
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad

Related Product By Categories

STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3

Related Product By Brand

PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
PMEG6020EPA,115
PMEG6020EPA,115
Nexperia USA Inc.
DIODE SCHOTTKY 60V 2A 3HUSON
BZX384-B3V3,115
BZX384-B3V3,115
Nexperia USA Inc.
DIODE ZENER 3.3V 300MW SOD323
PBSS304NZ,135
PBSS304NZ,135
Nexperia USA Inc.
TRANS NPN 60V 5.2A SOT223
BC857BMB,315
BC857BMB,315
Nexperia USA Inc.
TRANSISTOR PNP 45V 100MA SOT883
BC847CMB,315
BC847CMB,315
Nexperia USA Inc.
TRANS NPN 45V 0.1A DFN1006B-3
PDTA114EU,115
PDTA114EU,115
Nexperia USA Inc.
TRANS PREBIAS PNP 200MW SOT323
74LVC1G125GV-Q100,
74LVC1G125GV-Q100,
Nexperia USA Inc.
IC BUFFER NON-INVERT 5.5V SC74A
HEF4027BT,653
HEF4027BT,653
Nexperia USA Inc.
IC FF JK TYPE DUAL 1BIT 16SO
74HCT1G00GV125
74HCT1G00GV125
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP SC74A
74HCT373PW,112
74HCT373PW,112
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20TSSOP
74LVC373ADB112
74LVC373ADB112
Nexperia USA Inc.
NOW NEXPERIA 74LVC373ADB - BUS D