PMV30UN2VL
  • Share:

Nexperia USA Inc. PMV30UN2VL

Manufacturer No:
PMV30UN2VL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 5.4A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV30UN2VL is a 20 V, N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device utilizes Trench MOSFET technology and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. It is designed for high-performance applications requiring fast switching and low power dissipation.

Key Specifications

Parameter Value Unit
Type number PMV30UN2 -
Package version SOT23 -
Product status Production -
Channel type N -
Number of transistors 1 -
VDS [max] 20 V
VGS [max] 12 V
RDSon [max] @ VGS = 4.5 V; @25°C 32
RDSon [max] @ VGS = 2.5 V 43
Tj [max] 150 °C
ID [max] 5.4 A
QGD [typ] 1.4 nC
QG(tot) [typ] @ VGS = 4.5 V 6.2 nC
Ptot [max] 0.49 W
VGSth [typ] 0.65 V
Ciss [typ] 655 pF
Coss [typ] 70 pF
Release date 2014-06-03 -

Key Features

  • Trench MOSFET technology: Enhances performance with low on-state resistance and fast switching times.
  • Low threshold voltage: Ensures reliable operation with minimal gate voltage.
  • Very fast switching: Suitable for high-frequency applications.
  • Enhanced power dissipation capability: Up to 1000 mW, making it suitable for a variety of power management tasks.

Applications

  • LED driver: Ideal for driving LEDs due to its fast switching and low on-state resistance.
  • Power management: Used in various power management circuits for efficient power handling.
  • Low-side load switch: Suitable for switching loads on and off efficiently.
  • Switching circuits: Used in high-speed switching applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) for the PMV30UN2VL?

    The maximum drain-source voltage (VDS) is 20 V.

  2. What is the maximum gate-source voltage (VGS) for the PMV30UN2VL?

    The maximum gate-source voltage (VGS) is ±12 V.

  3. What is the typical threshold voltage (VGSth) for the PMV30UN2VL?

    The typical threshold voltage (VGSth) is 0.65 V.

  4. What is the maximum continuous drain current (ID) for the PMV30UN2VL?

    The maximum continuous drain current (ID) is 5.4 A.

  5. What is the maximum on-state resistance (RDSon) at VGS = 4.5 V for the PMV30UN2VL?

    The maximum on-state resistance (RDSon) at VGS = 4.5 V is 32 mΩ.

  6. What is the package type for the PMV30UN2VL?

    The package type is SOT23 (TO-236AB).

  7. Is the PMV30UN2VL RoHS compliant?

    Yes, the PMV30UN2VL is RoHS compliant and lead-free.

  8. What are the typical input capacitance (Ciss) and output capacitance (Coss) values for the PMV30UN2VL?

    The typical input capacitance (Ciss) is 655 pF, and the typical output capacitance (Coss) is 70 pF.

  9. What is the maximum junction temperature (Tj) for the PMV30UN2VL?

    The maximum junction temperature (Tj) is 150°C.

  10. Where can I purchase the PMV30UN2VL?

    The PMV30UN2VL can be purchased from various distributors such as Mouser Electronics, Digi-Key, and Arrow Electronics, among others.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:32mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:655 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):490mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.10
701

Please send RFQ , we will respond immediately.

Same Series
PMV30UN2VL
PMV30UN2VL
MOSFET N-CH 20V 5.4A TO236AB

Related Product By Categories

FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO

Related Product By Brand

BZX585-B4V7,135
BZX585-B4V7,135
Nexperia USA Inc.
DIODE ZENER 4.7V 300MW SOD523
BCP52-16,115
BCP52-16,115
Nexperia USA Inc.
TRANS PNP 60V 1A SOT223
PMBT3906M,315
PMBT3906M,315
Nexperia USA Inc.
TRANS PNP 40V 0.2A SOT883
BC807-16HR
BC807-16HR
Nexperia USA Inc.
BC807-16H/SOT23/TO-236AB
BCX54-16TF
BCX54-16TF
Nexperia USA Inc.
TRANS NPN 45V 1A SOT89
BUK9212-55B,118
BUK9212-55B,118
Nexperia USA Inc.
MOSFET N-CH 55V 75A DPAK
BUK6D43-60EX
BUK6D43-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 5A DFN2020MD-6
74HC541D-Q100J
74HC541D-Q100J
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74LV4060PW-Q100J
74LV4060PW-Q100J
Nexperia USA Inc.
IC COUNTER 14STAGE BIN 16TSSOP
74AUP1G04GM,132
74AUP1G04GM,132
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 6XSON
74LVC08AD,112
74LVC08AD,112
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SO
74HCT221D,112
74HCT221D,112
Nexperia USA Inc.
IC MULTIVIBRATOR 31NS 16SO