PMV30UN2VL
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Nexperia USA Inc. PMV30UN2VL

Manufacturer No:
PMV30UN2VL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 5.4A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV30UN2VL is a 20 V, N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device utilizes Trench MOSFET technology and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. It is designed for high-performance applications requiring fast switching and low power dissipation.

Key Specifications

Parameter Value Unit
Type number PMV30UN2 -
Package version SOT23 -
Product status Production -
Channel type N -
Number of transistors 1 -
VDS [max] 20 V
VGS [max] 12 V
RDSon [max] @ VGS = 4.5 V; @25°C 32
RDSon [max] @ VGS = 2.5 V 43
Tj [max] 150 °C
ID [max] 5.4 A
QGD [typ] 1.4 nC
QG(tot) [typ] @ VGS = 4.5 V 6.2 nC
Ptot [max] 0.49 W
VGSth [typ] 0.65 V
Ciss [typ] 655 pF
Coss [typ] 70 pF
Release date 2014-06-03 -

Key Features

  • Trench MOSFET technology: Enhances performance with low on-state resistance and fast switching times.
  • Low threshold voltage: Ensures reliable operation with minimal gate voltage.
  • Very fast switching: Suitable for high-frequency applications.
  • Enhanced power dissipation capability: Up to 1000 mW, making it suitable for a variety of power management tasks.

Applications

  • LED driver: Ideal for driving LEDs due to its fast switching and low on-state resistance.
  • Power management: Used in various power management circuits for efficient power handling.
  • Low-side load switch: Suitable for switching loads on and off efficiently.
  • Switching circuits: Used in high-speed switching applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) for the PMV30UN2VL?

    The maximum drain-source voltage (VDS) is 20 V.

  2. What is the maximum gate-source voltage (VGS) for the PMV30UN2VL?

    The maximum gate-source voltage (VGS) is ±12 V.

  3. What is the typical threshold voltage (VGSth) for the PMV30UN2VL?

    The typical threshold voltage (VGSth) is 0.65 V.

  4. What is the maximum continuous drain current (ID) for the PMV30UN2VL?

    The maximum continuous drain current (ID) is 5.4 A.

  5. What is the maximum on-state resistance (RDSon) at VGS = 4.5 V for the PMV30UN2VL?

    The maximum on-state resistance (RDSon) at VGS = 4.5 V is 32 mΩ.

  6. What is the package type for the PMV30UN2VL?

    The package type is SOT23 (TO-236AB).

  7. Is the PMV30UN2VL RoHS compliant?

    Yes, the PMV30UN2VL is RoHS compliant and lead-free.

  8. What are the typical input capacitance (Ciss) and output capacitance (Coss) values for the PMV30UN2VL?

    The typical input capacitance (Ciss) is 655 pF, and the typical output capacitance (Coss) is 70 pF.

  9. What is the maximum junction temperature (Tj) for the PMV30UN2VL?

    The maximum junction temperature (Tj) is 150°C.

  10. Where can I purchase the PMV30UN2VL?

    The PMV30UN2VL can be purchased from various distributors such as Mouser Electronics, Digi-Key, and Arrow Electronics, among others.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:32mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:655 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):490mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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PMV30UN2VL
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MOSFET N-CH 20V 5.4A TO236AB

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