PMV250EPEAR
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Nexperia USA Inc. PMV250EPEAR

Manufacturer No:
PMV250EPEAR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 40V 1.5A TO236AB
Delivery:
Payment:
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Product Introduction

Overview

The PMV250EPEAR is a P-Channel MOSFET manufactured by Nexperia USA Inc. This surface-mount device is part of Nexperia's extensive portfolio of small-signal MOSFETs, designed to offer high performance and reliability in various electronic applications. The PMV250EPEAR is housed in a TO-236AB package, making it suitable for space-constrained designs while maintaining robust electrical characteristics.

Key Specifications

ParameterValue
Channel TypeP-Channel
Drain-Source Voltage (Vds)40 V
Drain Current (Id)1.5 A (Ta), 6.25 W (Tc)
Power Dissipation (Pd)480 mW (Ta), 6.25 W (Tc)
Package TypeTO-236AB (Surface Mount)

Key Features

  • P-Channel MOSFET with low on-state resistance.
  • High drain current capability of up to 1.5 A.
  • Drain-source voltage rating of 40 V, suitable for a wide range of applications.
  • Compact TO-236AB surface-mount package for efficient use of board space.
  • High power dissipation of 6.25 W at the case temperature (Tc).

Applications

The PMV250EPEAR MOSFET is versatile and can be used in various applications, including but not limited to:

  • Power management and switching circuits.
  • Audio and video equipment.
  • Automotive electronics.
  • Industrial control systems.
  • Consumer electronics such as smartphones, tablets, and laptops.

Q & A

  1. What is the channel type of the PMV250EPEAR MOSFET? The PMV250EPEAR is a P-Channel MOSFET.
  2. What is the maximum drain-source voltage (Vds) of the PMV250EPEAR? The maximum drain-source voltage is 40 V.
  3. What is the maximum drain current (Id) of the PMV250EPEAR? The maximum drain current is 1.5 A at ambient temperature (Ta).
  4. What is the power dissipation (Pd) of the PMV250EPEAR? The power dissipation is 480 mW at ambient temperature (Ta) and 6.25 W at case temperature (Tc).
  5. What package type is the PMV250EPEAR available in? The PMV250EPEAR is available in a TO-236AB surface-mount package.
  6. What are some common applications of the PMV250EPEAR MOSFET? Common applications include power management, audio and video equipment, automotive electronics, industrial control systems, and consumer electronics.
  7. Is the PMV250EPEAR environmentally friendly? Yes, this semiconductor product has an indefinite environmental friendly use period (EFUP).
  8. Where can I find detailed specifications for the PMV250EPEAR? Detailed specifications can be found on the Nexperia website, as well as through distributors like Digi-Key and Heisener.
  9. What is the significance of the TO-236AB package? The TO-236AB package is a surface-mount type, which is compact and efficient for use in space-constrained designs.
  10. Can the PMV250EPEAR be used in high-power applications? Yes, with its high power dissipation and current handling capabilities, the PMV250EPEAR is suitable for high-power applications.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:240mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):480mW (Ta), 6.25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number PMV250EPEAR PMV50EPEAR
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta) 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 240mOhm @ 1.3A, 10V 45mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V 19.2 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 20 V 793 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 480mW (Ta), 6.25W (Tc) 310mW (Ta), 455mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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