PMV20XNEAR
  • Share:

Nexperia USA Inc. PMV20XNEAR

Manufacturer No:
PMV20XNEAR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 6.3A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV20XNEAR is a 20 V, N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is designed using Trench MOSFET technology and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. It is AEC-Q101 qualified, making it suitable for automotive applications, as well as various industrial and consumer electronics. The device is known for its low threshold voltage, very fast switching capabilities, and robust ElectroStatic Discharge (ESD) protection.

Key Specifications

ParameterValue
Type NumberPMV20XNEA
PackageSOT23 (TO-236AB)
Channel TypeN-channel
VDS [max]20 V
RDSon [max] @ VGS = 4.5 V; @25°C20 mΩ
RDSon [max] @ VGS = 2.5 V34 mΩ
Tj [max]150°C
ID [max]6.3 A
QGD [typ]3.1 nC
QG(tot) [typ] @ VGS = 4.5 V9.9 nC
Ptot [max]1.19 W
VGSth [typ]1 V
Automotive QualifiedYes (AEC-Q101)
Ciss [typ]930 pF
Coss [typ]178 pF

Key Features

  • Low threshold voltage for efficient operation.
  • Very fast switching capabilities, making it suitable for high-speed applications.
  • Trench MOSFET technology for improved performance and reliability.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM for enhanced robustness.
  • AEC-Q101 qualified, ensuring reliability in automotive and other demanding environments.

Applications

  • Relay driver: Ideal for controlling relays in various electronic systems.
  • High-speed line driver: Suitable for applications requiring fast signal transmission.
  • Low-side load switch: Used in power management circuits to control load switching.
  • Switching circuits: Applicable in a wide range of switching applications due to its fast switching and low on-resistance.
  • Automotive systems: Qualified for use in automotive applications due to its AEC-Q101 certification.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMV20XNEAR?
    The maximum drain-source voltage (VDS) is 20 V.
  2. What is the package type of the PMV20XNEAR?
    The package type is SOT23 (TO-236AB).
  3. Is the PMV20XNEAR AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified.
  4. What is the maximum drain current (ID) of the PMV20XNEAR?
    The maximum drain current (ID) is 6.3 A.
  5. What is the typical threshold voltage (VGSth) of the PMV20XNEAR?
    The typical threshold voltage (VGSth) is 1 V.
  6. What is the ESD protection level of the PMV20XNEAR?
    The ESD protection level is > 2 kV HBM.
  7. What are some common applications of the PMV20XNEAR?
    Common applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.
  8. What technology is used in the PMV20XNEAR?
    The PMV20XNEAR uses Trench MOSFET technology.
  9. What is the maximum junction temperature (Tj) of the PMV20XNEAR?
    The maximum junction temperature (Tj) is 150°C.
  10. How can I order samples of the PMV20XNEAR?
    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:20mOhm @ 6.3A, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:930 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):460mW (Ta), 6.94W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.46
1,802

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMV20XNEAR PMV50XNEAR PMV20XNER
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 6.3A (Ta) 3.4A (Ta) 5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 8V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 20mOhm @ 6.3A, 4.5V 57mOhm @ 3.4A, 8V 23mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA 1.25V @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V 5 nC @ 4.5 V 18.6 nC @ 4.5 V
Vgs (Max) ±12V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 930 pF @ 10 V 296 pF @ 15 V 1150 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 460mW (Ta), 6.94W (Tc) 590mW (Ta), 5.6W (Tc) 510mW (Ta), 6.94W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

BAT54QB-QZ
BAT54QB-QZ
Nexperia USA Inc.
BAT54QB-Q/SOT8015/DFN1110D-3
PUMD10/ZLF
PUMD10/ZLF
Nexperia USA Inc.
TRANS PREBIAS
BC807-40HZ
BC807-40HZ
Nexperia USA Inc.
BC807-40H/SOT23/TO-236AB
BCP56-QF
BCP56-QF
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
74HC126PW,118
74HC126PW,118
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 14TSSOP
74ABT16245BDGG,112
74ABT16245BDGG,112
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 48TSSOP
74LVC1G126GW-Q100H
74LVC1G126GW-Q100H
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 5TSSOP
74LVC240ADB,118
74LVC240ADB,118
Nexperia USA Inc.
IC BUFFER INVERT 3.6V 20SSOP
74LVC1G00GW-Q100H
74LVC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74HCT373PW-Q100,11
74HCT373PW-Q100,11
Nexperia USA Inc.
IC TRANSP LATCH OCT D 20TSSOP
74HC4538PW-Q100,11
74HC4538PW-Q100,11
Nexperia USA Inc.
IC MULTIVIBRATOR 25NS 16TSSOP
PDZ3.9BGW,118
PDZ3.9BGW,118
Nexperia USA Inc.
SINGLE ZENER DIODE IN A SOD123 P