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PMV20XNEAR
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Nexperia USA Inc. PMV20XNEAR

Manufacturer No:
PMV20XNEAR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 6.3A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The PMV20XNEAR is a 20 V, N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is designed using Trench MOSFET technology and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. It is AEC-Q101 qualified, making it suitable for automotive applications, as well as various industrial and consumer electronics. The device is known for its low threshold voltage, very fast switching capabilities, and robust ElectroStatic Discharge (ESD) protection.

Key Specifications

ParameterValue
Type NumberPMV20XNEA
PackageSOT23 (TO-236AB)
Channel TypeN-channel
VDS [max]20 V
RDSon [max] @ VGS = 4.5 V; @25°C20 mΩ
RDSon [max] @ VGS = 2.5 V34 mΩ
Tj [max]150°C
ID [max]6.3 A
QGD [typ]3.1 nC
QG(tot) [typ] @ VGS = 4.5 V9.9 nC
Ptot [max]1.19 W
VGSth [typ]1 V
Automotive QualifiedYes (AEC-Q101)
Ciss [typ]930 pF
Coss [typ]178 pF

Key Features

  • Low threshold voltage for efficient operation.
  • Very fast switching capabilities, making it suitable for high-speed applications.
  • Trench MOSFET technology for improved performance and reliability.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM for enhanced robustness.
  • AEC-Q101 qualified, ensuring reliability in automotive and other demanding environments.

Applications

  • Relay driver: Ideal for controlling relays in various electronic systems.
  • High-speed line driver: Suitable for applications requiring fast signal transmission.
  • Low-side load switch: Used in power management circuits to control load switching.
  • Switching circuits: Applicable in a wide range of switching applications due to its fast switching and low on-resistance.
  • Automotive systems: Qualified for use in automotive applications due to its AEC-Q101 certification.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMV20XNEAR?
    The maximum drain-source voltage (VDS) is 20 V.
  2. What is the package type of the PMV20XNEAR?
    The package type is SOT23 (TO-236AB).
  3. Is the PMV20XNEAR AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified.
  4. What is the maximum drain current (ID) of the PMV20XNEAR?
    The maximum drain current (ID) is 6.3 A.
  5. What is the typical threshold voltage (VGSth) of the PMV20XNEAR?
    The typical threshold voltage (VGSth) is 1 V.
  6. What is the ESD protection level of the PMV20XNEAR?
    The ESD protection level is > 2 kV HBM.
  7. What are some common applications of the PMV20XNEAR?
    Common applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.
  8. What technology is used in the PMV20XNEAR?
    The PMV20XNEAR uses Trench MOSFET technology.
  9. What is the maximum junction temperature (Tj) of the PMV20XNEAR?
    The maximum junction temperature (Tj) is 150°C.
  10. How can I order samples of the PMV20XNEAR?
    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:20mOhm @ 6.3A, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:930 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):460mW (Ta), 6.94W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number PMV20XNEAR PMV50XNEAR PMV20XNER
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 6.3A (Ta) 3.4A (Ta) 5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 8V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 20mOhm @ 6.3A, 4.5V 57mOhm @ 3.4A, 8V 23mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA 1.25V @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V 5 nC @ 4.5 V 18.6 nC @ 4.5 V
Vgs (Max) ±12V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 930 pF @ 10 V 296 pF @ 15 V 1150 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 460mW (Ta), 6.94W (Tc) 590mW (Ta), 5.6W (Tc) 510mW (Ta), 6.94W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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