PMV20XNER
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Nexperia USA Inc. PMV20XNER

Manufacturer No:
PMV20XNER
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 5.7A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The PMV20XNER is a 30 V, N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. It is designed to offer low threshold voltage, enhanced power dissipation, and robust ElectroStatic Discharge (ESD) protection. The PMV20XNER is suitable for a variety of applications requiring high efficiency, fast switching, and reliability.

Key Specifications

ParameterValue
Type numberPMV20XNE
PackageSOT23 (TO-236AB)
Channel typeN-channel
VDS [max] (V)30
VGS [max] (V)12
RDSon [max] @ VGS = 4.5 V; @25°C (mΩ)23
RDSon [max] @ VGS = 2.5 V (mΩ)30
VESD (kV)2
Tj [max] (°C)150
ID [max] (A)7.2
QGD [typ] (nC)2.1
QG(tot) [typ] @ VGS = 4.5 V (nC)12.4
Ptot [max] (W)0.51
VGSth [typ] (V)0.65
Automotive qualifiedNo
Ciss [typ] (pF)1150
Coss [typ] (pF)110

Key Features

  • Trench MOSFET technology: Offers enhanced performance and efficiency.
  • Low threshold voltage: Ensures easy switching and low power consumption.
  • Enhanced power dissipation capability of 1200 mW: Suitable for applications requiring high power handling.
  • ElectroStatic Discharge (ESD) protection: Provides protection up to 2 kV HBM.
  • Fast switching: Ideal for high-speed applications such as relay drivers, high-speed line drivers, and low-side load switches.

Applications

  • Relay driver: Used in relay circuits to control the flow of current.
  • High-speed line driver: Suitable for high-speed data transmission lines.
  • Low-side load switch: Used in power management circuits to control the flow of current to loads.
  • Switching circuits: General-purpose switching applications requiring fast and efficient switching.
  • Automotive and industrial applications: Although not AEC-Q101 qualified, it can be used in various industrial and automotive contexts where its specifications meet the requirements.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMV20XNER?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the package type of the PMV20XNER?
    The PMV20XNER is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
  3. What is the maximum drain current (ID) of the PMV20XNER?
    The maximum drain current (ID) is 7.2 A.
  4. Does the PMV20XNER have ESD protection?
    Yes, the PMV20XNER has ESD protection up to 2 kV HBM.
  5. What are some common applications of the PMV20XNER?
    Common applications include relay drivers, high-speed line drivers, low-side load switches, and general-purpose switching circuits.
  6. Is the PMV20XNER automotive qualified?
    No, the PMV20XNER is not AEC-Q101 qualified.
  7. What is the typical threshold voltage (VGSth) of the PMV20XNER?
    The typical threshold voltage (VGSth) is 0.65 V.
  8. What is the maximum junction temperature (Tj) of the PMV20XNER?
    The maximum junction temperature (Tj) is 150°C.
  9. How much power can the PMV20XNER dissipate?
    The PMV20XNER has an enhanced power dissipation capability of 1200 mW.
  10. What is the on-resistance (RDSon) of the PMV20XNER at VGS = 4.5 V?
    The on-resistance (RDSon) at VGS = 4.5 V is 23 mΩ.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:23mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18.6 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1150 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):510mW (Ta), 6.94W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number PMV20XNER PMV20XNEAR
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Ta) 6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 23mOhm @ 5.7A, 4.5V 20mOhm @ 6.3A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.6 nC @ 4.5 V 15 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 15 V 930 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 510mW (Ta), 6.94W (Tc) 460mW (Ta), 6.94W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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