PMV20ENR
  • Share:

Nexperia USA Inc. PMV20ENR

Manufacturer No:
PMV20ENR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 6A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV20ENR is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This component is designed to offer robust and reliable power switching capabilities, making it suitable for a variety of industrial and automotive applications. The PMV20ENR is housed in the compact TO-236AB (SOT23) package, which is ideal for space-constrained designs.

Key Specifications

ParameterValue
Part NumberPMV20ENR
ManufacturerNexperia USA Inc.
FET TypeN-Channel
Drain to Source Voltage (Vdss)30V
Continuous Drain Current (Id) @ 25°C6A (Ta)
On-Resistance (Rds On) @ Id, Vgs21 mOhm @ 6A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id2V @ 250µA
Maximum Gate Voltage (Vgs)±20V
Power Dissipation (Max)510mW (Ta), 6.94W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Package / CaseTO-236AB (SOT23)
Mounting TypeSurface Mount

Key Features

  • High current capability of up to 6A at 25°C.
  • Low on-resistance of 21 mOhm at 6A and 10V Vgs.
  • Compact TO-236AB (SOT23) package for space-saving designs.
  • Wide operating temperature range from -55°C to 150°C.
  • Low gate threshold voltage of 2V at 250µA.
  • High power dissipation of up to 6.94W at the case temperature.

Applications

The PMV20ENR is versatile and can be used in various applications, including:

  • Industrial power supplies and motor drives.
  • Automotive systems, such as battery management and power steering.
  • Renewable energy systems, including solar and wind power.
  • Collaborative robots (cobots) and other industrial automation equipment.
  • Uninterruptible Power Supplies (UPS) and other power conditioning systems.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the PMV20ENR?
    The maximum drain to source voltage (Vdss) is 30V.
  2. What is the continuous drain current (Id) at 25°C for the PMV20ENR?
    The continuous drain current (Id) at 25°C is 6A.
  3. What is the on-resistance (Rds On) of the PMV20ENR at 6A and 10V Vgs?
    The on-resistance (Rds On) is 21 mOhm at 6A and 10V Vgs.
  4. What is the gate threshold voltage (Vgs(th)) of the PMV20ENR?
    The gate threshold voltage (Vgs(th)) is 2V at 250µA.
  5. What is the maximum gate voltage (Vgs) for the PMV20ENR?
    The maximum gate voltage (Vgs) is ±20V.
  6. What is the power dissipation (Max) of the PMV20ENR?
    The power dissipation is 510mW (Ta) and 6.94W (Tc).
  7. What is the operating temperature range of the PMV20ENR?
    The operating temperature range is -55°C to 150°C (TJ).
  8. What package type is the PMV20ENR available in?
    The PMV20ENR is available in the TO-236AB (SOT23) package.
  9. What is the mounting type of the PMV20ENR?
    The mounting type is surface mount.
  10. In what types of applications is the PMV20ENR commonly used?
    The PMV20ENR is commonly used in industrial power supplies, automotive systems, renewable energy systems, collaborative robots, and Uninterruptible Power Supplies (UPS).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:21mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:435 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):510mW (Ta), 6.94W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.39
1,069

Please send RFQ , we will respond immediately.

Related Product By Categories

2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB

Related Product By Brand

PTVS3V3S1UR,115
PTVS3V3S1UR,115
Nexperia USA Inc.
TVS DIODE 3.3VWM 8VC CFP3
BAS21VD,135
BAS21VD,135
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
BZX79-C5V6,133
BZX79-C5V6,133
Nexperia USA Inc.
DIODE ZENER 5.6V 400MW ALF2
BC847BS-QX
BC847BS-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
74ABT16245BDGG,112
74ABT16245BDGG,112
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 48TSSOP
74LVC16245ADGG,118
74LVC16245ADGG,118
Nexperia USA Inc.
IC TXRX NON-INVERT 3.6V 48TSSOP
74HCT04PW,118
74HCT04PW,118
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14TSSOP
74HC11DB,112
74HC11DB,112
Nexperia USA Inc.
NEXPERIA 74HC11D - AND GATE, HC/
74HCT1G00GW,165
74HCT1G00GW,165
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74LVC08ADB,118
74LVC08ADB,118
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SSOP
74HCT1G00GV125
74HCT1G00GV125
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP SC74A
74HC237D-Q100J
74HC237D-Q100J
Nexperia USA Inc.
IC DECODER/DEMUX 1 X 3:8 16SO