PMV16XNR
  • Share:

Nexperia USA Inc. PMV16XNR

Manufacturer No:
PMV16XNR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 6.8A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV16XNR is a small signal N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. This MOSFET is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for a variety of applications where space is limited. The device is designed to provide high performance and reliability in various electronic circuits.

Key Specifications

ParameterValue
Voltage Rating (Vds)20 V
Continuous Drain Current (Id)6.8 A (Ta), 8.6 A (Tc)
Power Dissipation (Ptot)510 mW (Ta), 6.94 W (Tc)
Gate Threshold Voltage (Vgs(th))0.4 V to 0.9 V
Gate-Source Voltage (Vgs)Up to 12 V
Drain-Source On-Resistance (Rds(on))Maximum 33 mΩ
Package TypeSOT23 (TO-236AB)
Operating Temperature Range-55°C to +150°C

Key Features

  • N-channel enhancement mode Field-Effect Transistor (FET)
  • Small SOT23 (TO-236AB) SMD package for compact designs
  • High continuous drain current of up to 8.6 A
  • Low on-resistance of up to 33 mΩ
  • Wide operating temperature range from -55°C to +150°C
  • Enhancement mode operation for efficient switching

Applications

The PMV16XNR MOSFET is suitable for a wide range of applications, including but not limited to:

  • Power switching and amplification in consumer electronics
  • Automotive systems requiring high reliability and performance
  • Industrial control and automation
  • Audio and video equipment
  • General-purpose switching in various electronic circuits

Q & A

  1. What is the voltage rating of the PMV16XNR MOSFET?
    The voltage rating (Vds) of the PMV16XNR MOSFET is 20 V.
  2. What is the continuous drain current of the PMV16XNR?
    The continuous drain current (Id) is up to 6.8 A at ambient temperature (Ta) and up to 8.6 A at case temperature (Tc).
  3. What is the power dissipation of the PMV16XNR?
    The power dissipation (Ptot) is 510 mW at ambient temperature (Ta) and 6.94 W at case temperature (Tc).
  4. What is the gate threshold voltage range of the PMV16XNR?
    The gate threshold voltage (Vgs(th)) range is from 0.4 V to 0.9 V.
  5. What is the maximum gate-source voltage for the PMV16XNR?
    The maximum gate-source voltage (Vgs) is up to 12 V.
  6. What is the typical on-resistance of the PMV16XNR?
    The typical on-resistance (Rds(on)) is up to 33 mΩ.
  7. What package type is used for the PMV16XNR?
    The PMV16XNR is packaged in a SOT23 (TO-236AB) SMD package.
  8. What is the operating temperature range of the PMV16XNR?
    The operating temperature range is from -55°C to +150°C.
  9. Is the PMV16XNR suitable for automotive applications?
    Yes, the PMV16XNR is suitable for automotive systems due to its high reliability and performance.
  10. Can the PMV16XNR be used in consumer electronics?
    Yes, the PMV16XNR can be used in consumer electronics for power switching and amplification.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:20mOhm @ 6.8A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20.2 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1240 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):510mW (Ta), 6.94W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.44
1,112

Please send RFQ , we will respond immediately.

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK

Related Product By Brand

PMEG2002AESFBYL
PMEG2002AESFBYL
Nexperia USA Inc.
DIODE SCHTKY 20V 200MA DSN0603B2
BZX79-C3V3,133
BZX79-C3V3,133
Nexperia USA Inc.
DIODE ZENER 3.3V 400MW ALF2
PDZ6.2B,115
PDZ6.2B,115
Nexperia USA Inc.
DIODE ZENER 6.2V 400MW SOD323
BZX384-B3V3,115
BZX384-B3V3,115
Nexperia USA Inc.
DIODE ZENER 3.3V 300MW SOD323
BZX384-C75,115
BZX384-C75,115
Nexperia USA Inc.
DIODE ZENER 75V 300MW SOD323
PDTA124EU,135
PDTA124EU,135
Nexperia USA Inc.
NEXPERIA PDTA124EU - SMALL SIGNA
BUK7Y12-40EX
BUK7Y12-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 52A LFPAK56
PMPB20ENZ
PMPB20ENZ
Nexperia USA Inc.
MOSFET N-CH 30V 7.2A DFN2020MD-6
BSH111,215
BSH111,215
Nexperia USA Inc.
MOSFET N-CH 55V 335MA TO236AB
HEF4541BT,653
HEF4541BT,653
Nexperia USA Inc.
IC OSC PROG TIMER 36MHZ 14SOIC
74AHCT1G04GW-Q100H
74AHCT1G04GW-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 5TSSOP
74LVC02APW-Q100J
74LVC02APW-Q100J
Nexperia USA Inc.
IC GATE NOR 4CH 2-INP 14TSSOP