PMV16XNR
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Nexperia USA Inc. PMV16XNR

Manufacturer No:
PMV16XNR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 6.8A TO236AB
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The PMV16XNR is a small signal N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. This MOSFET is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for a variety of applications where space is limited. The device is designed to provide high performance and reliability in various electronic circuits.

Key Specifications

ParameterValue
Voltage Rating (Vds)20 V
Continuous Drain Current (Id)6.8 A (Ta), 8.6 A (Tc)
Power Dissipation (Ptot)510 mW (Ta), 6.94 W (Tc)
Gate Threshold Voltage (Vgs(th))0.4 V to 0.9 V
Gate-Source Voltage (Vgs)Up to 12 V
Drain-Source On-Resistance (Rds(on))Maximum 33 mΩ
Package TypeSOT23 (TO-236AB)
Operating Temperature Range-55°C to +150°C

Key Features

  • N-channel enhancement mode Field-Effect Transistor (FET)
  • Small SOT23 (TO-236AB) SMD package for compact designs
  • High continuous drain current of up to 8.6 A
  • Low on-resistance of up to 33 mΩ
  • Wide operating temperature range from -55°C to +150°C
  • Enhancement mode operation for efficient switching

Applications

The PMV16XNR MOSFET is suitable for a wide range of applications, including but not limited to:

  • Power switching and amplification in consumer electronics
  • Automotive systems requiring high reliability and performance
  • Industrial control and automation
  • Audio and video equipment
  • General-purpose switching in various electronic circuits

Q & A

  1. What is the voltage rating of the PMV16XNR MOSFET?
    The voltage rating (Vds) of the PMV16XNR MOSFET is 20 V.
  2. What is the continuous drain current of the PMV16XNR?
    The continuous drain current (Id) is up to 6.8 A at ambient temperature (Ta) and up to 8.6 A at case temperature (Tc).
  3. What is the power dissipation of the PMV16XNR?
    The power dissipation (Ptot) is 510 mW at ambient temperature (Ta) and 6.94 W at case temperature (Tc).
  4. What is the gate threshold voltage range of the PMV16XNR?
    The gate threshold voltage (Vgs(th)) range is from 0.4 V to 0.9 V.
  5. What is the maximum gate-source voltage for the PMV16XNR?
    The maximum gate-source voltage (Vgs) is up to 12 V.
  6. What is the typical on-resistance of the PMV16XNR?
    The typical on-resistance (Rds(on)) is up to 33 mΩ.
  7. What package type is used for the PMV16XNR?
    The PMV16XNR is packaged in a SOT23 (TO-236AB) SMD package.
  8. What is the operating temperature range of the PMV16XNR?
    The operating temperature range is from -55°C to +150°C.
  9. Is the PMV16XNR suitable for automotive applications?
    Yes, the PMV16XNR is suitable for automotive systems due to its high reliability and performance.
  10. Can the PMV16XNR be used in consumer electronics?
    Yes, the PMV16XNR can be used in consumer electronics for power switching and amplification.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:20mOhm @ 6.8A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20.2 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1240 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):510mW (Ta), 6.94W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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