PMV16XNR
  • Share:

Nexperia USA Inc. PMV16XNR

Manufacturer No:
PMV16XNR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 6.8A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV16XNR is a small signal N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. This MOSFET is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for a variety of applications where space is limited. The device is designed to provide high performance and reliability in various electronic circuits.

Key Specifications

ParameterValue
Voltage Rating (Vds)20 V
Continuous Drain Current (Id)6.8 A (Ta), 8.6 A (Tc)
Power Dissipation (Ptot)510 mW (Ta), 6.94 W (Tc)
Gate Threshold Voltage (Vgs(th))0.4 V to 0.9 V
Gate-Source Voltage (Vgs)Up to 12 V
Drain-Source On-Resistance (Rds(on))Maximum 33 mΩ
Package TypeSOT23 (TO-236AB)
Operating Temperature Range-55°C to +150°C

Key Features

  • N-channel enhancement mode Field-Effect Transistor (FET)
  • Small SOT23 (TO-236AB) SMD package for compact designs
  • High continuous drain current of up to 8.6 A
  • Low on-resistance of up to 33 mΩ
  • Wide operating temperature range from -55°C to +150°C
  • Enhancement mode operation for efficient switching

Applications

The PMV16XNR MOSFET is suitable for a wide range of applications, including but not limited to:

  • Power switching and amplification in consumer electronics
  • Automotive systems requiring high reliability and performance
  • Industrial control and automation
  • Audio and video equipment
  • General-purpose switching in various electronic circuits

Q & A

  1. What is the voltage rating of the PMV16XNR MOSFET?
    The voltage rating (Vds) of the PMV16XNR MOSFET is 20 V.
  2. What is the continuous drain current of the PMV16XNR?
    The continuous drain current (Id) is up to 6.8 A at ambient temperature (Ta) and up to 8.6 A at case temperature (Tc).
  3. What is the power dissipation of the PMV16XNR?
    The power dissipation (Ptot) is 510 mW at ambient temperature (Ta) and 6.94 W at case temperature (Tc).
  4. What is the gate threshold voltage range of the PMV16XNR?
    The gate threshold voltage (Vgs(th)) range is from 0.4 V to 0.9 V.
  5. What is the maximum gate-source voltage for the PMV16XNR?
    The maximum gate-source voltage (Vgs) is up to 12 V.
  6. What is the typical on-resistance of the PMV16XNR?
    The typical on-resistance (Rds(on)) is up to 33 mΩ.
  7. What package type is used for the PMV16XNR?
    The PMV16XNR is packaged in a SOT23 (TO-236AB) SMD package.
  8. What is the operating temperature range of the PMV16XNR?
    The operating temperature range is from -55°C to +150°C.
  9. Is the PMV16XNR suitable for automotive applications?
    Yes, the PMV16XNR is suitable for automotive systems due to its high reliability and performance.
  10. Can the PMV16XNR be used in consumer electronics?
    Yes, the PMV16XNR can be used in consumer electronics for power switching and amplification.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:20mOhm @ 6.8A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20.2 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1240 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):510mW (Ta), 6.94W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.44
1,112

Please send RFQ , we will respond immediately.

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK

Related Product By Brand

PTVS8V5S1UR,115
PTVS8V5S1UR,115
Nexperia USA Inc.
TVS DIODE 8.5VWM 14.4VC CFP3
PMEG6045ETPX
PMEG6045ETPX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 4.5A SOD128
BCP56-10TX
BCP56-10TX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BC807-16LZ
BC807-16LZ
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB
BC847A/SNVL
BC847A/SNVL
Nexperia USA Inc.
TRANS NPN 45V 0.1A TO236AB
BC857-QR
BC857-QR
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB
PDTA114EU,115
PDTA114EU,115
Nexperia USA Inc.
TRANS PREBIAS PNP 200MW SOT323
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
74LVC4066PW,112
74LVC4066PW,112
Nexperia USA Inc.
IC SWITCH QUAD SPST 14TSSOP
74LVC16245ADGG,118
74LVC16245ADGG,118
Nexperia USA Inc.
IC TXRX NON-INVERT 3.6V 48TSSOP
74LVC1G74GT-Q100X
74LVC1G74GT-Q100X
Nexperia USA Inc.
IC FF D-TYPE SNGL 1BIT 8XSON
74HCT04DB-Q100J
74HCT04DB-Q100J
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14SSOP